Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 3 with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2034 is Pb-free. Features 1 2 G S Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 W34* W34 = Device Code * = Month (A~Z) Applications Marking z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch Order Information Device WNM2034-3/TR http://www.twtysemi.com [email protected] Package SOT-23 Shipping 3000/Tape&Reel 1 of 3 Product specification WNM2034 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 TA=25°C Continuous Drain Current (TJ = 150 °C)a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current (TJ = 150 °C)b Maximum Power Dissipation TA=70°C TA=25°C b TA=70°C Pulsed Drain Current c Operating Junction and Storage Temperature Range ID PD ID PD Unit V 3.6 3.3 2.8 2.6 0.8 0.7 0.5 0.4 3.2 3 2.6 2.4 0.6 0.5 0.4 0.3 A W A W IDM 10 A TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA Typical Maximum 125 150 140 175 150 180 165 210 60 75 RșJC a Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WNM2034 Electronics Characteristics o (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±12V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250uA Drain-to-source On-resistance RDS(on) Forward Transconductance gFS 20 V 1 uA ±100 nA 1.5 2.0 V VGS = 10V, ID = 3.6A 37 47 VGS = 4.5V, ID = 3.0A 45 56 VDS = 5 V, ID = 3.6A 5.3 ON CHARACTERISTICS 1.0 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 505 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 10 V, 0.90 Gate-to-Source Charge QGS ID = 3.1A 1.18 Gate-to-Drain Charge QGD 2.1 Turn-On Delay Time td(ON) 4.4 Rise Time tr VGS = 10 V, VDS = 10 V, 3.2 Turn-Off Delay Time td(OFF) RL=3 , RG=6 24.5 Fall Time tf VGS = 0 V, f = 1.0 MHz, pF 60 VDS = 10 V 50 11.4 nC SWITCHING CHARACTERISTICS ns 3.2 SOURCE-to-DRAIN DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = 1.5A [email protected] 0.80 0.95 1.50 V 3 of 3