Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 2 circuit. Standard Product WNM4006 is Pb-free. G S Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 W46* W46 = Device Code * = Month (A~Z) Applications Marking z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging http://www.twtysemi.com Order information Device Package Shipping WNM4006-3/TR SOT-23 3000/Reel&Tape [email protected] 1 of 3 Product specification WNM4006 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 45 Gate-Source Voltage VGS ±20 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V 1.7 1.5 1.3 1.2 0.8 0.7 0.5 0.4 1.5 1.4 1.2 1.1 0.7 0.6 0.4 0.3 A W A W Pulsed Drain Current c IDM 8 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 120 145 132 170 145 174 158 202 60 75 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WNM4006 o Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 45 V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±20V VGS(TH) VGS = VDS, ID = 250uA 45 V 1 uA 100 nA 1.2 1.5 V VGS = 10V, ID = 2.0A 126 160 VGS = 4.5V, ID = 2.0A 142 180 VGS = 4.0V, ID = 2.0A 147 185 VGS = 2.5V, ID = 1.5A 208 250 gFS VDS =10V, ID = 2.0A 3 CISS VGS = 0 V, 315 Output Capacitance COSS f = 1.0 MHz, 18 Reverse Transfer Capacitance CRSS VDS = 25 V 15 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance b, c Forward Transconductance CAPACITANCES, RDS(on) 0.5 m S CHARGES Input Capacitance VGS = 4.5 V, VDS = 25 V, ID = 2.0A pF 4.20 0.51 nC 0.76 1.85 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) VGS = 10 V, 4.8 Rise Time tr VDS =25 V, 3.0 Turn-Off Delay Time td(OFF) RL=25, 27 Fall Time tf RG=6 2.6 VSD VGS = 0 V, IS = 0.8A 0.8 ns BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com [email protected] 1.5 V 3 of 3