Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Features P−Channel MOSFET z -30V/-4.3A,RDS(ON)< 53m@VGS= -10V z -30V/-3.4A,RDS(ON)< 56m@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT23-3 package design G 1 S 2 3 D Top View Application z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch Drain 3 G WP1U 2 1 Gate Source U = Date Code WP1 = Specific Device Code Order information Part Number WPM3401-3/TR http://www.twtysemi.com Package SOT23-3 [email protected] Shipping 3000 Tape&Reel 1 of 2 Parameter Product specification WPM3401 Absolute Maximum Ratings (TA=25 к!unless otherwise specified) Parameter Parameter VDS VGS ID IDM PD TJ Tstg RșJA Value Unit -30 ±12 -4.6 -3.6 -20 1.3 0.8 -55~150 V V A Symbol l Drain-Source voltage Gate-Source Voltage Continuous Drain Steady-State TA=25ć Current Steady-State TA=70ć Pulse Drain Current Power Dissipation TA=25ć TA=70ć Operating Junction Temperature Range Storage Temperature Range Thermal Resistance-Junction to Ambient A W ć ć/W 95 Electrical Characteristics (TA=25к Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. -1.0 -1.5 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On State Drain Current (Pulse) ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage RDS(on) gfs VSD -30 -0.5 VDS=0V,VGS=±12V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85к VDS= -5V,VGS =-4.5V ±100 -1 -5 -10 V nA uA A VGS=-10V,ID=-4.3A VGS=-4.5V,ID=-3.5A VDS=-15V,ID=-4.3A 0.038 0.043 13 0.053 0.056 IS= -1.0A,VGS =0V -0.75 -1.5 ȍ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time http://www.twtysemi.com td(off) 1.7 nC 5 1250 VDS=-15V,VGS=0V f=1MHz 106 pF 90 10 td(on) tr Turn-Off Time 27 VDS=-15V,VGS=-10V ID= -4.3A VDD=-15V,RL=15ȍ IDŁ-1.0A,VGEN=-10V RG=6ȍ tf [email protected] 18 60 nS 9 2 of 2