SMD Type Product specification ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8A DESCRIPTION This new generation of Trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES SOT23 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC-DC converters • Power Management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A07FTA 7” 8mm 3000 units ZXMN10A07FTC 13” 8mm 10000 units PINOUT DEVICE MARKING • 7N1 Top View http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification ZXMN10A07F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS Gate-Source Voltage V GS LIMIT UNIT 100 V 20 V Continuous Drain Current @ V GS =10V; T A =25°C (b) I D @ V GS =10V; T A =70°C (b) @ V GS =10V; T A =25°C (a) 0.8 0.6 0.7 A Pulsed Drain Current (c) I DM 3.5 A A (b) IS 0.5 Pulsed Source Current (Body Diode) (c) I SM 3.5 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j ;T stg -55 to +150 °C VALUE UNIT Continuous Source Current (Body Diode) THERMAL RESISTANCE PARAMETER SYMBOL (a) R ⍜JA 200 °C/W Junction to Ambient (b) R ⍜JA 155 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2