Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive. Features D • Low on-resistance • 2.5V gate drive capability • SOT23 package G Applications S • Buck/Boost DC-DC Converters • Load switching and SMPS • Charging applications in portable equipment • Motor Control • LED Lighting Ordering information DEVICE Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXMN2F30FHTA S D G Device marking KNC http://www.twtysemi.com Top view [email protected] 1 of 3 Product specification ZXMN2F30FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage VDSS 20 V Gate source voltage VGS ±12 V ID 4.9 4.0 4.1 A A A IDM 22.6 A IS 1.6 A Pulsed source current (body diode)(c) ISM 22.6 A Power dissipation at TA =25°C(a) PD 0.96 W 7.6 mW/°C Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor 1.4 W 11.2 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 131 °C/W Junction to ambient(b) R⍜JA 89 °C/W Junction to Lead(d) R⍜JL 68 °C/W PD Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at the end of the drain lead). http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN2F30FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-Source Breakdown Voltage V(BR)DSS 20 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (*) RDS(on) Forward Transconductance(*)(†) gfs Input Capacitance Typ. Max. Unit Conditions Static V ID= 250µA, VGS=0V 1 µA VDS= 20V, VGS=0V 100 nA VGS=±12V, VDS=0V 1.5 V ID= 250µA, VDS=VGS 0.045 0.065 Ω Ω VGS= 4.5V, ID= 2.5A VGS= 2.5V, ID= 2.0A 8.6 S VDS= 10V, ID= 3A Ciss 452 pF Output Capacitance Coss 102 pF Reverse Transfer Capacitance Crss 58 pF Turn-On-Delay Time td(on) 2.9 ns Rise Time tr 5.6 ns Turn-Off Delay Time td(off) 19.4 ns Fall Time tf 10.2 ns Total Gate Charge Qg 4.8 nC Gate-Source Charge Qgs 1 nC Gate Drain Charge Qgd 1.2 nC VSD 0.75 0.6 0.9 Dynamic (†) VDS= 10V, VGS=0V f=1MHz Switching (‡)(†) VDD= 10V, VGS= 4.5V ID= 1A RG ≈ 6.0Ω VDS= 10V, VGS= 4.5V ID= 3.5A Source-drain diode Diode Forward Voltage(*) 1.2 V IS= 1.25A, VGS=0V NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%. (†) For design aid only, not subject to production testing. (‡) Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 3 of 3