Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive. Features D • Low on-resistance • 2.5V gate drive capability • SOT23 package G Applications • Buck/Boost DC-DC Converters • Motor Control • LED Lighting S Ordering information DEVICE Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXMN2F34FHTA S D G Device marking KNB http://www.twtysemi.com Top view [email protected] 1 of 3 Product specification ZXMN2F34FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage VDSS 20 V Gate source voltage VGS ±12 V ID 4.0 3.3 3.4 A A A IDM 18.6 A IS 2.1 A Pulsed source current (body diode)(c) ISM 18.6 A Power dissipation at TA =25°C(a) PD 0.95 W 7.6 mW/°C 1.4 W 11 mW/°C Tj, Tstg -55 to 150 °C Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 131 °C/W Junction to ambient(b) R⍜JA 89 °C/W R⍜JL 68 °C/W Junction to Junction to lead(d) NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at end of drain lead). http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN2F34FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-Source Breakdown Voltage V(BR)DSS 20 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (*) RDS(on) Forward Transconductance(*)(†) gfs Input Capacitance Typ. Max. Unit Conditions Static V ID= 250μA, VGS=0V 1 μA VDS= 20V, VGS=0V 100 nA VGS=±12V, VDS=0V 1.5 V ID= 250μA, VDS=VGS 0.060 0.120 Ω Ω VGS= 4.5V, ID= 2.5A VGS= 2.5V, ID= 1.0A 7.5 S VDS= 10V, ID= 2.5A Ciss 277 pF Output Capacitance Coss 65 pF Reverse Transfer Capacitance Crss 35 pF Turn-On-Delay Time td(on) 2.65 ns Rise Time tr 4.2 ns Turn-Off Delay Time td(off) 9.9 ns Fall Time tf 5.1 ns Total Gate Charge Qg 2.8 nC Gate-Source Charge Qgs 0.61 nC Gate Drain Charge Qgd 0.63 nC Diode Forward Voltage(*) VSD 0.73 Reverse recovery time(†) trr 0.5 0.8 Dynamic (†) VDS= 10V, VGS=0V f=1MHz Switching (‡)(†) VDD= 10V, VGS= 4.5V ID= 1A RG ≈ 6.0Ω VDS= 10V, VGS= 4.5V ID= 2.5A Source-drain diode Reverse recovery charge(†) Qrr 1.2 V IS= 1.25A, VGS=0V 6.5 ns 1.4 nC Tj=25oC, IF=1.65A di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. (†) For design aid only, not subject to production testing. (‡) Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 3 of 3