Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS(on) TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance Fast switching speed Low gate charge Low threshold Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. • • • • • • • • DC - DC converters Power management functions Disconnect switches Motor control • Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 S D G Top View Equivalent Circuit Top View Pin Out Ordering Information (Note 3) Product ZXMN3A14FTA Notes: Marking 314 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For more packaging details, go to our website at http://www.twtysemi.com Marking Information 314 http://www.twtysemi.com 314 = Product Type Marking Code [email protected] 1 of 3 Product specification ZXMN3A14F Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V TA = 70°C (Note 5) (Note 5) (Note 4) ID Pulsed Drain Current (Note 6) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 6) IDM IS ISM Value 30 ±20 3.9 3.2 3.2 18 2.3 18 Units V V Value 1 8 1.5 12 125 83 70.44 -55 to +150 Unit W mW/°C W mW/°C °C/W °C/W °C/W °C A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Linear Derating Factor Power Dissipation (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 7) Operating and Storage Temperature Range Notes: Symbol PD PD RθJA RθJA RθJL TJ, TSTG 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 5. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN3A14F Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 1.0 RDS (ON) ⎯ Forward Transconductance (Notes 8 and 10) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) gfs VSD trr Qrr ⎯ ⎯ ⎯ ⎯ 2.2 65 95 ⎯ 0.95 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 8) ⎯ 48 69 7.1 0.85 13 7 ID = 250μA, VDS = VGS VGS = 10V, ID = 3.2A VGS = 4.5V, ID = 2.6A VDS = 15V, ID = 3.2A TJ = 25°C, IS = 2.5A, VGS = 0V TJ = 25°C, IF = 1.6A, di/dt = 100A/μs Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 448 82 49 2.4 2.5 13.1 5.3 8.6 1.4 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: mΩ S V ns nC Test Condition pF VDS = 15V, VGS = 0V f = 1.0MHz ns VDD = 15V, ID = 1A, RG ≅ 6.0Ω, VGS = 10V nC VDS =15V, VGS = 10V, ID = 3.2A 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3