TYSEMI ZXMP6A13FTA

SMD Type
Product specification
ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.400
ID =-1.1A
DESCRIPTION
This new generation of trench MOSFETs from TY utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SOT23
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Relay and solenoid driving
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A13FTA
7”
8mm
3000 units
ZXMP6A13FTC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 7P6
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
SMD Type
Product specification
ZXMP6A13F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
LIMIT
UNIT
-60
V
20
V
ID
-1.1
-0.8
-0.9
A
I DM
-4.0
A
IS
-1.2
A
V GS
Continuous Drain Current V GS =10V; T A =25°C
V GS =10V; T A =70°C
V GS =10V; T A =25°C
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
(b)
(c)
(b)
(b)
(a)
I SM
-4.0
A
(a)
PD
625
5
mW
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
806
6.5
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Pulsed Source Current (Body Diode)
Power Dissipation at T A =25°C
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)
R θJA
200
°C/W
Junction to Ambient
(b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t ≤5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2