CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes: • an analogue biasing circuit that makes it less sensitive to spread and chip environment. • an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA TTL Circuit Biasing Circuit IN OUT TTL Circuit Biasing Circuit TO8 TI Vc TO9 Vctrl Vc Vc The circuit is 100% DC and RF tested on wafer to ensure performance compliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. Main Features 11W output power in pulse mode High gain: > 18dB @ 10GHz High PAE: 40% @ 10GHz Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit Chip size: 4.9 x 3.68 x 0.1mm3 Main Characteristics Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Unit +80 10.5 °C GHz Top F_op Operating temperature range (1) Operating frequency range P_sat Saturated output power @ 25°C 12.5 W P_3dBc Output power @ 3dBc @ 25°C 11 W 18.5 dB G_lin Linear gain @ 25°C -40 9 Max 17 ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! (1) The reference is the back-side of the chip. Ref. : DSCHA81000069 - 10 Mar 10 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X-band High Power Amplifier CHA8100 Electrical Characteristics Tamb = 25°C, Vc=9V, Ic (Quiescent) = 2.1A, Pulse wi dth=100µs, Duty cycle = 20% Symbol F_op G_lin G_lin_T RL_in RL_out P_sat P_sat_T Parameter Min Typ Max Unit Operating frequency 9 10.5 GHz Linear gain (9 to 10GHz) 17 18.5 dB Linear gain variation versus temperature -0.025 dB/°C Input Return Loss -9 dB Output Return Loss -15 dB Saturated output power 41 dBm Saturated output power variation versus -0.01 dB/°C temperature P_3dBc Output power @ 3dBc (3) 39.5 40.5 dBm PAE_3dBc Power Added Efficiency @ 3dBc 35 40 % Vc Power supply voltage (3) 8 9 V Ic Power supply quiescent current (1) 2.1 A TI TTL input voltage 0 5 V I_TI TTL input current 0.7 mA Vctrl Collector current control voltage 5 V Ictrl Control supply current 22 mA Zctr Vctrl input port impedance (2) 350 Ohm Top Operating temperature range -40 +85 °C (1) Parameter tunable by Vctrl when control biasing circuit used. (2) This value corresponds to the 4 ports in parallel (3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings) Absolute Maximum Ratings (1) Tamb = 25°C Symbol Cmp Vc Ic Ic_sat Vctrl Tj Tstg (1) (2) (3) (4) (5) Parameter Compression level (2 & 3) Power supply voltage (4) Power supply quiescent current Power supply current in saturation Collector current control voltage Maximum junction temperature (5) Storage temperature range Values 8 10 3 4 6.5 175 -55 to +125 Unit dB V A A V °C °C Operation of this device above anyone of these parameters may cause permanent damage. For higher compression the level limit can be raised by decreasing the voltage Vc using the rate 0.5 V / dBc VC=9V, Temperature=-40°C, Output VSWR=2:1 Without RF input power Equivalent Thermal resistance to Backside: 6°C /W Ref : DSCHA81000069 - 10 Mar 10 2/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 Typical measured characteristics Measurements on Jig: Vc = 9V, VTTL=5V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20% 20 15 S21/S11/S22 (dB) 10 5 dBS21 dBS11 dBS22 0 -5 -10 -15 -20 -25 8.5 8.8 9.0 9.3 9.5 9.8 10.0 10.3 10.5 10.8 11.0 Frequency ( GHz) Gain/Input & Output Return losses (dB). Temperature:+20°C 27 25 Linear gain (dB) 23 21 19 17 15 85°C 25°C -40°C 13 11 9 7 9 9,2 9,4 9,6 9,8 10 10,2 10,4 Frequency (GHz) Linear Gain versus frequency and temperature Ref. : DSCHA81000069 - 10 Mar 10 3/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 43 42 Pout @ 3dBc (dBm) 41 40 39 85°C 25°C -40°C 38 37 36 35 34 33 9 9,2 9,4 9,6 9,8 10 10,2 10,4 Frequency (GHz) Output Power @ 3dBc versus frequency and temperature 50 47,5 45 PAE @ 3dBc (%) 42,5 40 37,5 35 32,5 85°C 25°C -40°C 30 27,5 25 22,5 20 9 9,2 9,4 9,6 9,8 10 10,2 10,4 Frequency (GHz) PAE @ 3dBc versus frequency and temperature Ref : DSCHA81000069 - 10 Mar 10 4/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 5 4,5 Ic @ 3dBc (mA) 4 3,5 3 2,5 2 85°C 25°C -40°C 1,5 1 0,5 0 9 9,2 9,4 9,6 9,8 10 10,2 10,4 Frequency (GHz) Ic @ 3dBc versus frequency and temperature Ref. : DSCHA81000069 - 10 Mar 10 5/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 42 40 9GHz 9.5GHz 10GHz 10.2GHz 10.5GHz Pout (dBm) 38 36 34 32 30 28 0 1 2 3 4 5 6 7 8 Compression (dB) Output Power @ 25°C versus compression and frequency 50 45 40 9GHz 9.5GHz 10GHz 10.2GHz 10.5GHz Pae (%) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 Compression (dB) PAE @ 25°C versus compression and frequency Ref : DSCHA81000069 - 10 Mar 10 6/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 8 X-band High Power Amplifier CHA8100 4 3,8 3,6 3,4 Ic (A) 3,2 3 2,8 2,6 9GHz 9.5GHz 10GHz 10.2GHz 10.5GHz 2,4 2,2 2 0 1 2 3 4 5 6 7 8 Compression (dB) Ic (A) Collector current @ 25°C versus compression and fr equency 3 2,8 2,6 2,4 2,2 2 1,8 1,6 1,4 1,2 1 0,8 0,6 0,4 0,2 0 TTL Vctrl TI -40°C TI +20°C TI 85°C Vctrl -40°C Vctrl +20°C Vctrl +85°C 0 1 2 3 4 5 6 TI/Vctrl (V) Collector quiescent current versus TI & Vctrl and temperature Ref. : DSCHA81000069 - 10 Mar 10 7/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 40 35 -40°C +20°C +85°C Ictrl (mA) 30 25 20 15 10 5 0 0 1 2 3 4 5 6 5 6 Vctrl (V) Control current versus control voltag e & temperature I_TI f(TI ) 1,2 -40°C 1 +20°C +85°C I_TI (mA) 0,8 0,6 0,4 0,2 0 0 1 2 3 4 TI (V) TTL input current versus TTL voltage and temperature Ref : DSCHA81000069 - 10 Mar 10 8/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 Chip Mechanical Data and Pin references 1 12 Units: µm Chip width and length are given with a tolerance of ±35µm Chip thickness = 100µm +/- 10 µm RF pads (1, 12) = 96 x 196µm² DC pads (2, 3, 4, 5, 6, 7, 9,10, 14, 15, 17, 18, 19, 20, 21, 22) = 96 x 96µm² DC pads (8, 16) = 192 x 96µm² DC pads (11, 13) = 288 x 96µm² Pin number 1 7, 9, 15, 17 2, 22 4, 20 5, 19 6, 10, 14, 18 3, 8, 11, 13, 16, 21 12 Ref. : DSCHA81000069 - 10 Mar 10 Pin name IN C1, C2 TI TO9 TO8 GND V,Vc1,Vc2 OUT Description Input RF Collector current control voltage TTL input TTL output when Vcx=9V TTL output Vcx=8V Ground (NC) Power supply voltage Output RF 9/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 Bonding recommendations For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port Connection Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm x2 Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm x2 IN (1) OUT (12) st Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm DC pads to 1 decoupling level for double bonding DC pads to 1st decoupling level for single bonding st 1 decoupling level to 2nd decoupling level for double bonding st 1 decoupling level to 2nd decoupling level for single bonding Assembly recommendations in test fixture (using analogue biasing circuits) Vc Vctrl 2 3 4 5 6 7 8 9 10 11 1 12 OUT IN 100pF 22 21 20 19 18 17 16 15 14 13 10nF 1µF Vctrl 100µF Vc Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred. Ref : DSCHA81000069 - 10 Mar 10 10/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA8100 Assembly recommendations in test fixture (using TTL circuits) * Performances obtained with the same accesses connected to the same supply Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred. Biasing possibilities TTL / Vcontrol Vc1, Vc2, V Biasing via TTL interface 9V Biasing via TTL interface 8V Biasing via analogue control device Ref. : DSCHA81000069 - 10 Mar 10 9V or 8V 11/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Connections TO9 connected to C1 and C2 C2 & T08 not connected TO8 connected to C1 and C2 C2 & T09 not connected C2,V, Ti, TO8, TO9 not connected Specifications subject to change without notice X-band High Power Amplifier CHA8100 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form : CHA8100-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA81000069 - 10 Mar 10 12/12 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice