NSC 100329

100329
Low Power Octal ECL/TTL Bidirectional Translator with
Register
General Description
The 100329 is an octal registered bidirectional translator designed to convert TTL logic levels to 100K ECL logic levels
and vice versa. The direction of the translation is determined
by the DIR input. A LOW on the output enable input (OE)
holds the ECL outputs in a cut-off state and the TTL outputs
at a high impedance level. The outputs change synchronously with the rising edge of the clock input (CP) even
though only one output is enabled at the time.
The cut-off state is designed to be more negative than a normal ECL LOW level. This allows the output emitter-followers
to turn off when the termination supply is −2.0V, presenting a
high impedance to the data bus. This high impedance reduces the termination power and prevents loss of low state
noise margin when several loads share the bus.
The 100329 is designed with FAST ® TTL output buffers, featuring optimal DC drive and capable of quickly charging and
discharging highly capacitive loads. All inputs have 50 kΩ
pull-down resistors.
Features
n
n
n
n
n
n
n
Bidirectional translation
ECL high impedance outputs
Registered outputs
FAST TTL outputs
TRI-STATE ® outputs
Voltage compensated operating range = −4.2V to −5.7V
Standard Microcircuit Drawing
(SMD) 5962-9206601
Connection Diagrams
24-Pin DIP
24-Pin Quad Cerpack
DS100306-4
DS100306-2
TRI-STATE ® is a registered trademark of National Semiconductor Corporation.
FAST ® is a registered trademark of Fairchild Semiconductor.
© 1999 National Semiconductor Corporation
DS100306
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100329 Low Power Octal ECL/TTL Bidirectional Translator with Register
September 1999
Logic Symbol
Functional Diagram
DS100306-1
Pin Descriptions
Pin Names
Description
E0–E7
ECL Data I/O
T0–T7
TTL Data I/O
OE
Output Enable Input
CP
Clock Pulse Input
(Active Rising Edge)
DIR
Direction Control Input
All pins function at 100K ECL levels except for T0–T7.
DS100306-5
Note: DIR and OE use ECL logic levels
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2
Detail
DS100306-6
OE
DIR
CP
ECL
TTL
Port
Port
Notes
L
L
X
Input
Z
1, 3
L
H
X
LOW
Input
2, 3
1
(Cut-Off)
H
L
N
L
L
H
L
N
H
H
1
H
L
L
X
NC
1, 3
2
H
H
N
L
L
H
H
N
H
H
2
H
H
L
NC
X
2, 3
H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
N = LOW-to-HIGH Clock Transition
NC = No Change
Note 1: ECL input to TTL output mode.
Note 2: TTL input to ECL output mode.
Note 3: Retains data present before CP.
3
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Absolute Maximum Ratings (Note 4)
TRI-STATE Output
Current Applied to TTL
Output in LOW State (Max)
ESD (Note 5)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature (TSTG)
−65˚C to +150˚C
Maximum Junction Temperature (Tj)
Ceramic
+175˚C
VEE Pin Potential to
Ground Pin
−7.0V to +0.5V
VTTL Pin Potential to
Ground Pin
−0.5V to +6.0V
ECL Input Voltage (DC)
VEE to +0.5V
ECL Output Current
(DC Output HIGH)
−50 mA
TTL Input Voltage (Note 6)
−0.5V to +6.0V
TTL Input Current (Note 6)
−30 mA to +5.0 mA
Voltage Applied to Output in HIGH State
−0.5V to +5.5V
Twice the Rated IOL (mA)
≥2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military
ECL Supply Voltage (VEE)
TTL Supply Voltage (VTTL)
–55˚C to +125˚C
−5.7V to −4.2V
+4.5V to +5.5V
Note 4: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 5: ESD testing conforms to MIL-STD-883, Method 3015.
Note 6: Either voltage limit or current limit is sufficient to protect inputs.
Military Version
TTL-to-ECL DC Electrical Characteristics
VEE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C, VTTL = +4.5V to +5.5V
Symbol
VOH
Conditions
Parameter
Min
Max
Units
TC
Output HIGH Voltage
−1025
−870
mV
0˚C to
−1085
−870
mV
−55˚C
VIN = VIH (Max)
−1830
−1620
mV
0˚C to
or VIL (Min)
Loading with
50Ω to −2.0V
+125˚C
VOL
Output LOW Voltage
Notes
(Notes 7, 8,
9)
+125˚C
−1830
Cutoff Voltage
−1555
mV
−55˚C
−1950
mV
0˚C to
−1850
mV
+125˚C
VOHC
Output HIGH Voltage
−1035
OE or DIR Low
−55˚C
mV
0˚C to
(Notes 7, 8,
9)
+125˚C
mV
−55˚C
VIN = VIH (Min)
Loading with
−1610
mV
0˚C to
or VIL (Max)
50Ω0 to −2.0V
−1555
mV
−55˚C
V
−55˚C to
−1085
VOLC
Output LOW Voltage
+125˚C
VIH
Input HIGH Voltage
2.0
Over VTTL, VEE, TC Range
(Notes 7, 8,
9, 10)
Over VTTL, VEE, TC Range
(Notes 7, 8,
9, 10)
VIN = +2.7V
(Notes 7, 8,
9)
+125˚C
VIL
Input LOW Voltage
0.8
V
−55˚C to
+125˚C
IIH
Input HIGH Current
70
µA
−55˚C to
125˚C
Breakdown Test
1.0
mA
−55˚C to
VIN = +5.5V
+125˚C
IIL
Input LOW Current
−1.0
mA
−55˚C to
VIN = +0.5V
(Notes 7, 8,
9)
IIN = −18 mA
(Notes 7, 8,
9)
OE and DIR High
(Notes 7, 8,
9)
+125˚C
VFCD
IEE
Input Clamp
−1.2
V
−55˚C to
Diode Voltage
+125˚ C
VEE Supply Current
−55˚C to
−206
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−70
mA
+125˚C
4
Inputs Open
VEE = −4.2V to −5.7V
Military Version
ECL-to-TTL DC Electrical Characteristics
VEE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C, CL = 50 pF, VTTL = +4.5V to + 5.5V
Symbol
Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
Min
Max Units
2.5
mV
2.4
TC
0˚C to +125˚C
Conditions
IOH = −1 mA, VTTL = 4.50V
Notes
(Notes 7, 8, 9)
−55˚C
0.5
mV
IOL = 24 mA, VTTL = 4.50V
−55˚C
+125˚C
VIH
VIL
Input HIGH Voltage
Input LOW Voltage
−1165
−870
−1830 −1475
mV
mV
−55˚C
Guaranteed HIGH Signal
+125˚C
for All Inputs
−55˚C to
+125˚C
IIH
Input HIGH Current
350
µA
500
IIL
Input LOW Current
0.50
0˚C to
+125˚C
µA
−55˚C to
+125˚C
IOZHT
TRI-STATE Current
70
µA
Output High
IOZLT
TRI-STATE Current
Output Short-Circuit
−1.0
mA
(Notes 7, 8, 9)
VIN = VIH (Max)
VEE = −4.2V
(Notes 7, 8, 9)
VIN = VIL (Min)
VOUT = +2.7V
(Notes 7, 8, 9)
−55˚C to
VOUT = +0.5V
(Notes 7, 8, 9)
VOUT = 0.0V, VTTL = +5.5V
(Notes 7, 8, 9)
(Notes 7, 8, 9)
+125˚C
−60
−150
mA
CURRENT
ITTL
(Notes 7, 8, 9, 10)
for All Inputs
VEE = −5.7V
+125˚C
Output Low
IOS
−55˚C to
Guaranteed LOW Signal
(Notes 7, 8, 9, 10)
VTTL Supply Current
−55˚C to
+125˚C
70
mA
−55˚C to
TTL Outputs Low
47
mA
+125˚C
TTL Output High
70
mA
TTL Output in TRI-STATE
Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 8: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2 3, 7, and 8.
Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 10: Guaranteed by applying specified input condition and testing VOH/VOL.
Military Version
TTL-to-ECL AC Electrical Characteristics
VEE = −4.2V to −5.7V, VTTL = +4.5V to +5.5V, VCC = VCCA = GND
Symbol
tPLH
Parameter
CP to En
TC = −55˚C
TC = 25˚C
TC =
+125˚C
Min
Max
Min
Max
Min
Max
1.3
3.8
1.6
3.7
1.9
4.3
Conditions
Notes
ns
Figures 1, 2
(Notes 11,
12, 13)
(Notes 11,
12, 13)
ns
tPHL
tPZH
Units
OE to En
1.0
4.3
1.5
4.4
1.7
9.0
ns
Figures 1, 2
1.5
5.0
1.6
4.5
1.6
5.0
ns
Figures 1, 2
1.6
4.7
1.6
4.3
1.7
4.7
ns
Figures 1, 2
(Cutoff to HIGH)
tPHZ
OE to En
(HIGH to Cutoff)
tPHZ
DIR to En
(HIGH to Cutoff)
tset
Tn to CP
2.5
2.0
2.5
ns
Figures 1, 2
thold
Tn to CP
2.5
2.0
2.5
ns
Figures 1, 2
ns
Figures 1, 2
(Note 14)
ns
Figures 1, 2
(Note 14)
tpw(H)
Pulse Width CP
2.5
tTLH
Transition Time
0.4
tTHL
20% to 80%, 80% to 20%
fMAX
CP
250
2.0
2.3
2.5
0.5
2.1
250
5
0.4
250
2.4
(Note 14)
MHz
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Military Version
ECL-to-TTL AC Electrical Characteristics
VEE = −4.2V to −5.7V, VTTL = +4.5V to +5.5V, VCC = VCCA = GND, CL = 50 pF
Symbol
tPLH
Parameter
CP to Tn
TC = −55˚C
TC = 25˚C
TC = +125˚C
Units
Conditions
Notes
8.0
ns
Figures 1, 2
(Notes 11, 12,
13)
ns
Figures 3, 4
(Notes 11, 12,
13)
ns
Figures 3, 5
ns
Figures 3, 6
Min
Max
Min
Max
Min
Max
3.1
8.0
3.1
7.3
3.3
tPHL
tPZH
OE to Tn
3.4
9.1
3.7
9.0
4.0
10.1
tPZL
(Enable Time)
3.7
9.5
4.0
9.3
4.3
10.4
tPHZ
OE to Tn
3.2
10.0
3.3
9.0
3.5
9.3
tPLZ
(Disable Time)
3.0
9.8
3.4
8.8
4.1
10.4
tPHZ
DIR to Tn
2.6
9.5
2.8
8.8
3.0
9.0
tPLZ
(Disable Time)
2.7
8.7
3.1
8.0
4.0
9.6
tset
En to CP
2.5
2.0
2.5
ns
Figures 3, 4
thold
En to CP
3.0
2.5
3.0
ns
Figures 3, 4
tpw(H)
Pulse Width CP
2.5
2.5
5.0
ns
Figures 3, 4
fMAX
CP
200
200
100
MHz
(Note 14)
(Note 14)
Note 11: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 12: Screen tested 100% on each device at +25˚C, temperature only, Subgroup A9.
Note 13: Sample tested (Method 5005, Table I) on each mfg. lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.
Note 14: Not tested at +25˚C, +125˚C and −55˚C temperature (design characterization data).
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Test Circuitry
(TTL-to-ECL)
DS100306-7
Note 15: RT = 50Ω termination resistive load. When an input or output is being monitored by a scope, RTis supplied by the scope’s 50Ω input resistance. When
an input or output is not being monitored, an external 50Ω resistance must be applied to serve as RT.
Note 16: TTL and ECL force signals are brought to the DUT via 50Ω coax lines.
Note 17: VTTL is decoupled to ground with 0.1 µF, VEE is decoupled to ground with 0.01 µF and VCC is connected to ground.
FIGURE 1. TTL-to-ECL AC Test Circuit
Switching Waveforms
(TTL-to-ECL)
DS100306-9
FIGURE 2. TTL to ECL Transition — Propagation Delay and Transition Times
7
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Test Circuitry
(ECL-to-TTL)
DS100306-10
Note 18: RT = 50Ω termination resistive load. When an input or output is being monitored by a scope, RTis supplied by the scope’s 50Ω input resistance. When
an input or output is not being monitored, an external 50Ω resistance must be applied to serve as RT.
Note 19: The TTL TRI-STATE pull-up switch is connected to +7V only for ZL and LZ tests.
Note 20: TTL and ECL force signals are brought to the DUT via 50Ω coax lines.
Note 21: VTTL is decoupled to ground with 0.1 µF, VEE is decoupled to ground with 0.01 µF and VCC is connected to ground.
FIGURE 3. ECL-to-TTL AC Test Circuit
Switching Waveforms
(ECL-to-TTL)
DS100306-11
Note: DIR is LOW, OE is HIGH
FIGURE 4. ECL-to-TTL Transition — Propagation Delay and Transition Times
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Switching Waveforms
(ECL-to-TTL) (Continued)
DS100306-12
Note: DIR is LOW
FIGURE 5. ECL-to-TTL Transition, OE to TTL Output, Enable and Disable Times
DS100306-13
Note: OE is HIGH
FIGURE 6. ECL-to-TTL Transition, DIR to TTL Output, Disable Time
9
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Physical Dimensions
inches (millimeters) unless otherwise noted
24-Lead Ceramic Dual-In-Line Package (0.400" Wide) (D)
Package Number J24E
24-Lead Quad Cerpak (F)
Package Number W24B
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100329 Low Power Octal ECL/TTL Bidirectional Translator with Register
Notes
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