機密 UD02N65 第 1 頁 2011-03-03 -1- N-Ch 650V Fast Switching MOSFETs General Description Product Summery The UD02N65 is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The UD02N65 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS 650V RDS(ON) ID 8Ω 2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LED Lighting z Adapter/charger Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 650 V Gate-Source Voltage ±30 V 1 2 A 1 1.3 A 4 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 16 mJ IAS Avalanche Current 3.4 A 4 PD@TC=25℃ Total Power Dissipation 40 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 3 ℃/W 機密 UD02N65 第 2 頁 2011-03-03 -2- N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit 650 --- --- V Reference to 25℃ , ID=1mA --- 0.37 --- V/℃ VGS=10V , ID=1A --- 6.3 8 Ω 2 --- 5 V VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient --- -43 --- mV/℃ IDSS Drain-Source Leakage Current VDS=520V , VGS=0V , TJ=25℃ --- --- 2 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=1A --- 1.7 --- S Qg Total Gate Charge (10V) --- 8 --- Qgs Gate-Source Charge --- 2.56 --- Qgd Gate-Drain Charge --- 2.67 --- Turn-On Delay Time --- 4.8 --- Td(on) Tr Td(off) Tf VDS=520V , VGS=10V , ID=1A Rise Time VDD=300V , VGS=10V , RG=10Ω, --- 18.4 --- Turn-Off Delay Time ID=1A --- 10.8 --- nC ns Fall Time --- 23.2 --- Ciss Input Capacitance --- 290 --- Coss Output Capacitance --- 25 --- Crss Reverse Transfer Capacitance --- 4 --- Min. Typ. Max. Unit 3.2 --- --- mJ Min. Typ. Max. Unit --- --- 2 A --- --- 4 A --- --- 1 V --- 178 --- nS --- 382 --- nC VDS=25V , VGS=0V , F=1MHz pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=50V , L=1mH , IAS=1.5A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=1.5A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 機密 UD02N65 第 3 頁 2011-03-03 -3- N-Ch 650V Fast Switching MOSFETs Typical Characteristics 1.5 12 ID=1A VGS=10V VGS=8V VGS=7V VGS=6V 10 RDSON (mΩ) ID , Drain Current (A) 1.1 0.8 VGS=5V 8 6 0.4 4 0.0 0 10 20 30 VDS , Drain-to-Source Voltage (V) 2 40 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 TJ=150℃ TJ=25℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 3.0 Normalized On Resistance 1.8 2.3 Normalized VGS(th) 1.4 1.6 1 0.6 0.9 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) 150 -50 Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 機密 UD02N65 第 4 頁 2011-03-03 -4- N-Ch 650V Fast Switching MOSFETs 1000 F=1.0MHz Capacitance(pF) Ciss 100 Coss 10 Crss 1 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 PDM T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4