UNITPOWER UD6006

UD6006
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6006 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD6006 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
60V
18mΩ
35A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z LCD/LED back light
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
1
Continuous Drain Current, VGS @ 10V
35
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
22
A
1
7.4
A
1
6
A
80
A
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
67
mJ
IAS
Avalanche Current
PD@TC=25℃
28
A
4
45
W
4
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
2.8
℃/W
UD6006
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.057
---
V/℃
VGS=10V , ID=20A
---
14
18
VGS=4.5V , ID=10A
---
16
20
1.2
---
2.5
V
---
-5.68
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
45
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
---
19.3
27
Qgs
Gate-Source Charge
---
7.1
10
Qgd
Gate-Drain Charge
---
7.6
10.6
Td(on)
VDS=48V , VGS=4.5V , ID=15A
Turn-On Delay Time
uA
nC
---
7.2
14.4
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
50
90
Turn-Off Delay Time
ID=15A
---
36.4
73
Fall Time
---
7.6
15.2
Ciss
Input Capacitance
---
2423
3392
Coss
Output Capacitance
---
145
203
Crss
Reverse Transfer Capacitance
---
97
136
Min.
Typ.
Max.
Unit
19
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
35
A
---
---
80
A
---
---
1
V
---
16.3
---
nS
---
11
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Conditions
1,6
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25℃
IF=15A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6006
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
20
ID=12A
RDSON (mΩ)
19
18
17
16
15
4
6
VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
12
IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
150
UD6006
N-Ch 60V Fast Switching MOSFETs
Capacitance (pF)
10000
F=1.0MHz
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
VDS Drain to Source Voltage(V)
21
25
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
PDM
0.01
D = TON/T
SINGLE PULSE
0.01
0.00001
TON
0.0001
T
TJpeak = TC + PDM x RθJC
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4