機密 UI01N65 第 1 頁 2011-05-25 -1- N-Ch 650V Fast Switching MOSFETs General Description Product Summery The UI01N65 is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UI01N65 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 650V 12 Ω 1.2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter Features z Super Low Gate Charge TO251 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 650 V Gate-Source Voltage ±30 V 1 1.2 A 1 0.8 A 2.4 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 67 mJ IAS Avalanche Current 1.3 A 4 PD@TC=25℃ Total Power Dissipation 41.6 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 Max. Unit --- 62 ℃/W --- 3 ℃/W Rev A.01 D051711 1 機密 UI01N65 第 2 頁 2011-05-25 -2- N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit 650 --- --- V Reference to 25℃ , ID=1mA --- 0.66 --- V/℃ VGS=10V , ID=0.3A --- 10.5 12 Ω 2 --- 5 V VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient --- -6.4 --- mV/℃ IDSS Drain-Source Leakage Current VDS=520V , VGS=0V , TJ=25℃ --- --- 2 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=0.5A --- 1 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4.9 9.8 Ω Qg Total Gate Charge (10V) --- 6.03 8.4 Qgs Gate-Source Charge --- 1.95 2.7 Qgd Gate-Drain Charge --- 2.3 3.2 Td(on) VDS=520V , VGS=10V , ID=1A --- 4.4 8.8 Rise Time VDD=300V , VGS=10V , RG=10Ω, --- 18.4 33 Turn-Off Delay Time ID=1A --- 7.2 29 Fall Time --- 22.4 45 Ciss Input Capacitance --- 175 245 Coss Output Capacitance --- 17.8 25 Crss Reverse Transfer Capacitance --- 4.3 6 Min. Typ. Max. Unit 40 --- --- mJ Min. Typ. Max. Unit --- --- 1.2 A --- --- 2.4 A --- --- 1 V --- 181 --- nS --- 336 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=25V , VGS=0V , F=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=50V , L=79mH , IAS=1A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current 2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=79mH,IAS=1.3A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 機密 UI01N65 第 3 頁 2011-05-25 -3- N-Ch 650V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 機密 UI01N65 第 4 頁 2011-05-25 -4- N-Ch 650V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4