UM4409 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UM4409 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS -30V RDS(ON) ID 7.5m -15A Applications The UM4409 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch SOP8 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge D D D D Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Parameter S S S Absolute Maximum Ratings G Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage ID@TA=25 ID@TA=70 IDM 1 Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V Pulsed Drain Current V 20 -15 A -12.8 A -40 A 2 3 EAS Single Pulse Avalanche Energy 408 mJ IAS Avalanche Current -55.4 A Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 PD@TA=25 4 Thermal Data Symbol R R JA JC Parameter Typ. Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case 1 1 1 Max. Unit --- 85 /W --- 24 /W UM4409 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol BVDSS BVDSS RDS(ON) VGS(th) , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25 --- -0.018 --- VGS=-10V , ID=-10A --- 6.2 7.5 VGS=-4.5V , ID=-8A --- 9.5 12 -1.2 -1.6 -2.5 --- 5.04 --- VDS=-24V , VGS=0V , TJ=25 --- --- -1 VDS=-24V , VGS=0V , TJ=55 --- --- -5 20V , VDS=0V --- --- 100 nA --- 25 --- S --- 30 42 --- 10 14 --- 10.4 14.6 19 VGS=VDS , ID =-250uA VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=-5V , ID=-10A Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) , ID=-1mA VDS=-15V , VGS=-4.5V , ID=-10A Turn-On Delay Time V/ m V mV/ uA nC --- 9.4 Rise Time VDD=-15V , VGS=-10V , RG=3.3 , --- 10.2 18 Turn-Off Delay Time ID=-10A --- 117 234 Fall Time --- 24 48 Ciss Input Capacitance --- 3448 4827 Coss Output Capacitance --- 508 711 Crss Reverse Transfer Capacitance --- 421 589 Min. Typ. Max. Unit 120 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-30A Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Qrr Conditions 1,6 --- --- -10 A --- --- -40 A VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V Reverse Recovery Time IF=-10A , dI/dt=100A/µs , --- 19.4 --- nS Reverse Recovery Charge TJ=25 --- 9.1 --- nC VG=VD=0V , Force Current Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A 4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM4409 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 14 40 ID=-10A 35 VGS=-10V 12 RDSON (m ) -ID Drain Current (A) 30 VGS=-7V 25 VGS=-5V 20 VGS=-4.5V 15 VGS=-3V 10 10 8 5 0 6 0 1 2 3 -VDS , Drain-to-Source Voltage (V) 4 2 Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 10 8 6 TJ=150 TJ=25 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 TJ ,Junction Temperature ( 100 ) -50 150 0 50 100 TJ , Junction Temperature ( ) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 UM4409 P-Ch 30V Fast Switching MOSFETs 10000 100.00 F=1.0MHz Capacitance (pF) Ciss 100us 10.00 1ms 1000 10ms -ID (A) Coss 1.00 Crss 100ms 100 0.10 DC o TA=25 C Single Pulse 0.01 0.01 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 25 Fig.7 Capacitance 0.1 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R JA ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXR SINGLE JC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform 4