UM6214 Dual N-Ch 60V Fast Switching MOSFETs General Description Product Summery The UM6214 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM6214 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 60V 40mΩ 4.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 4.5 A 1 3.5 A 18 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 30 mJ IAS Avalanche Current 21 A Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 25 ℃/W UM6214 Dual N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=4A --- 33 40 VGS=4.5V , ID=3A --- 40 50 1.0 1.5 2.5 V --- -4.8 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 28.3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (4.5V) --- 19 --- Qgs Gate-Source Charge --- 2.6 --- Qgd Gate-Drain Charge --- 4.1 --- Td(on) VDS=48V , VGS=10V , ID=4A Turn-On Delay Time uA nC --- 3 --- Rise Time VDD=30V , VGS=10V , RG=3.3Ω --- 34 --- Turn-Off Delay Time ID=4A --- 23 --- Fall Time --- 6 --- Ciss Input Capacitance --- 1027 --- Coss Output Capacitance --- 65 --- Crss Reverse Transfer Capacitance --- 46 --- Min. Typ. Max. Unit 15.4 --- --- mJ Min. Typ. Max. Unit --- --- 4.5 A --- --- 18 A --- --- 1.2 V --- 12.1 --- nS --- 6.7 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=4A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM6214 Dual N-Ch 60V Fast Switching MOSFETs Typical Characteristics 60 20 ID=4A VGS=10V VGS=7V VGS=5V ID Drain Current (A) 15 53 RDSON (mΩ) VGS=4.5V 45 10 VGS=3V 38 5 30 0 0 0.5 1 1.5 2 2 2.5 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 10 IS -Source Current(A) 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 2.2 Normalized On Resistance 1.8 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UM6214 Dual N-Ch 60V Fast Switching MOSFETs 10000 Capacitance(pF) F=1.0MHz Ciss 1000 100 Coss Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4