UM9926 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The UM9926 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM9926 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 38mΩ 20V 6.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 z 100% EAS Guaranteed z Green Device Available S O-8 1 Absolute Maximum Ratings S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 10 V P arameter Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed ID 6.5 A IDM 30 A Drain-S ource Diode Forward C urrent a IS 1.7 A Maximum P ower Dissipation a PD 2 W T J , T S TG -55 to 150 C Operating Junction and S torage Temperature R ange Thermal Data Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W 4 G2 UM9926 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 10V,V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.9 1.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.0V, ID = 6.5A 23 28 m ohm V GS = 2.5V, ID = 5A 30 38 m ohm V DS = 5.0V, ID = 6.5A 16 S 540 PF 160 PF 100 PF 15 ns 20 ns 36 ns 11 ns V DS =10V, ID =6.5A,V GS =4V 6.4 nC V DS =10V, ID =6.5A,V GS =2.5V 4.6 nC 1.1 nC 2.8 nC OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b gFS Forward Transconductance 0.5 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time V DS =8V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 10V, ID = 1A, V GE N = 4.5V, R L = 10 ohm R GE N = 10 ohm tr Turn-Off Delay Time tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =10V, ID = 6.5 A V GS =4V S ymbol Condition Parameter C Min Typ Max Unit DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage VSD V GS = 0V, Is =1.7A Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 2 0.72 1.2 V UM9926 N-Ch 20V Fast Switching MOSFETs Typical Characteristics 20 15 V G S =8V V G S =3V 12 V G S =2.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =2V 12 8 4 V G S =1.5V 0 0 0.5 1.5 1.0 2.0 2.5 9 6 T j=125 C 3 V DS , Drain-to-S ource Voltage (V ) R DS (ON) , On-R es is tance Normalized R DS (on) (m W) 1.2 1.6 2.0 2.4 1.5 50 40 V G S =2.5V 30 20 V G S =4V 10 1 4 8 12 16 20 1.4 1.2 1.1 0 1.0 0.8 0.6 0.4 0.2 25 50 75 25 75 50 100 150 125 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage V DS =V G S I D =250uA 0 0 T j, J unction T emperature ( C ) 1.4 -50 -25 V G S =2.5V I D =5A 1.0 I D , Drain C urrent (A) 1.2 V G S =4V I D =6.5A 1.3 T j( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage V th, Normalized G ate-S ource T hres hold V oltage 0.8 F igure 2. Trans fer C haracteris tics 60 0.0 0.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1 25 C 0 0.0 3.0 -55 C 100 125 150 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 60 I D =6.5A Is , S ource-drain current (A) R DS (on) (m W) 50 40 25 C 30 20 125 C 75 C 10 0 0 1 2 4 6 5.0 25 C 75 C 1.0 8 V G S , G ate-S ource Voltage (V ) 125 C 10.0 0 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 3 UM9926 N-Ch 20V Fast Switching MOSFETs Typical Characteristics V G S , G ate to S ource V oltage (V ) 600 C is s C , C apacitance (pF ) 500 6 400 300 C os s 200 C rs s 100 5 V DS =10V I D =6.5A 4 3 2 1 0 0 0 2 4 8 6 10 0 12 1 4 5 6 7 8 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 600 Tr 100 60 TD(off) I D , Drain C urrent (A) S witching T ime (ns ) 3 2 TD(on) Tf 10 V DS =10V ,ID=1A 1 30 10 R 60 100 300 600 im it 10 10 0m ms s DC 1 0.1 0.03 6 10 )L 1s V G S =4.5V 1 D ON S( V G S =10V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( W) 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 Single Pulse 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 4 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000