US0008 N-Ch 100V Fast Switching MOSFETs General Description Product Summery The US0008 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US0008 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS 100V RDS(ON) ID 310mΩ 1.2A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 1.2 A 1 1 A 5 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W US0008 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.067 --- V/℃ VGS=10V , ID=1A --- 260 310 VGS=4.5V , ID=0.5A --- 270 320 mΩ 1.0 1.5 2.5 V --- -4.2 --- mV/℃ VGS=0V , ID=250uA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=1A --- 2.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 5.6 Ω Qg Total Gate Charge (10V) --- 9.7 13.6 Qgs Gate-Source Charge --- 1.6 2.2 Qgd Gate-Drain Charge --- 1.7 2.4 3.2 Td(on) VDS=80V , VGS=10V , ID=1A --- 1.6 Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 19 34 Turn-Off Delay Time ID=1A --- 13.6 27 Fall Time --- 19 38 Ciss Input Capacitance --- 508 711 Coss Output Capacitance --- 29 41 Crss Reverse Transfer Capacitance --- 16.4 23 Min. Typ. Max. --- --- 1.2 A --- --- 5 A --- --- 1.2 V --- 14 --- nS --- 9.3 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ \ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit US0008 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 265 5.0 ID=1A 260 RDSON (mΩ) ID Drain Current (A) 4.0 3.0 VGS=10V 255 VGS=7V 2.0 VGS=5V VGS=4.5V 250 1.0 VGS=3V 245 0.0 0 0.5 1 1.5 2 2 2.5 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 2 IS Source Current(A) 1.6 1.2 0.8 TJ=150℃ 0.4 TJ=25℃ 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.4 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.6 1 1.2 0.6 0.8 0.2 0.4 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 US0008 N-Ch 100V Fast Switching MOSFETs 1000 100.00 F=1.0MHz Capacitance (pF) Ciss 10.00 100us 1.00 10ms ID (A) 100 100ms 0.10 1s Coss 0.01 Crss 10 1 5 9 13 17 21 DC TA=25℃ Single Pulse 0.00 25 0.1 VDS Drain to Source Voltage (V) Fig.7 Capacitance 1 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000