UNITPOWER US0008

US0008
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The US0008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US0008 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
100V
RDS(ON)
ID
310mΩ
1.2A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT23 Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=70℃
IDM
Rating
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
1
1.2
A
1
1
A
5
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
[email protected]=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Typ.
Max.
Unit
---
125
℃/W
---
80
℃/W
US0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
100
---
---
V
Reference to 25℃ , ID=1mA
---
0.067
---
V/℃
VGS=10V , ID=1A
---
260
310
VGS=4.5V , ID=0.5A
---
270
320
mΩ
1.0
1.5
2.5
V
---
-4.2
---
mV/℃
VGS=0V , ID=250uA
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=1A
---
2.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.8
5.6
Ω
Qg
Total Gate Charge (10V)
---
9.7
13.6
Qgs
Gate-Source Charge
---
1.6
2.2
Qgd
Gate-Drain Charge
---
1.7
2.4
3.2
Td(on)
VDS=80V , VGS=10V , ID=1A
---
1.6
Rise Time
VDD=50V , VGS=10V , RG=3.3Ω
---
19
34
Turn-Off Delay Time
ID=1A
---
13.6
27
Fall Time
---
19
38
Ciss
Input Capacitance
---
508
711
Coss
Output Capacitance
---
29
41
Crss
Reverse Transfer Capacitance
---
16.4
23
Min.
Typ.
Max.
---
---
1.2
A
---
---
5
A
---
---
1.2
V
---
14
---
nS
---
9.3
---
nC
Tr
Td(off)
Tf
Turn-On Delay Time
nC
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
\
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unit
US0008
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
265
5.0
ID=1A
260
RDSON (mΩ)
ID Drain Current (A)
4.0
3.0
VGS=10V
255
VGS=7V
2.0
VGS=5V
VGS=4.5V
250
1.0
VGS=3V
245
0.0
0
0.5
1
1.5
2
2
2.5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
4
6
VGS (V)
8
10
Fig.2 On-Resistance vs. Gate-Source
2
IS Source Current(A)
1.6
1.2
0.8
TJ=150℃
0.4
TJ=25℃
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.4
Normalized On Resistance
1.8
2.0
Normalized VGS(th)
1.4
1.6
1
1.2
0.6
0.8
0.2
0.4
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
150
US0008
N-Ch 100V Fast Switching MOSFETs
1000
100.00
F=1.0MHz
Capacitance (pF)
Ciss
10.00
100us
1.00
10ms
ID (A)
100
100ms
0.10
1s
Coss
0.01
Crss
10
1
5
9
13
17
21
DC
TA=25℃
Single Pulse
0.00
25
0.1
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
1
10
100
VDS (V)
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (R θJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDM x RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000