UNITPOWER US3003

US3003
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The US3003 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The US3003 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
-30V
32mΩ
-4.8A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT23 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
[email protected]=70℃
IDM
[email protected]=25℃
10s
Units
1
-5.5
-4.8
A
1
-4.3
-3.8
A
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Steady State
2
-24
A
3
1.32
1
W
3
0.84
0.64
W
Total Power Dissipation
[email protected]=70℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient
1
1
Thermal Resistance Junction-Ambient (t ≤10s)
1
Thermal Resistance Junction-Case
1
Typ.
Max.
Unit
---
125
℃/W
---
95
℃/W
---
80
℃/W
US3003
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
VGS=-10V , ID=-4A
---
26
32
VGS=-4.5V , ID=-2A
---
36
45
-1.0
-1.5
-2.5
V
---
4.6
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
1
VDS=-24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
15.8
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
26
Ω
Qg
Total Gate Charge (-4.5V)
---
12.6
17.6
Qgs
Gate-Source Charge
---
4.52
6.3
Qgd
Gate-Drain Charge
---
4.72
6.6
Td(on)
VDS=-15V , VGS=-4.5V , ID=-4A
Turn-On Delay Time
uA
nC
---
4.8
9.6
Rise Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
35
63.0
Turn-Off Delay Time
ID=-4A
---
42
84
Fall Time
---
21
42.0
Ciss
Input Capacitance
---
1345
1883
Coss
Output Capacitance
---
194
272
Crss
Reverse Transfer Capacitance
---
158
221
Min.
Typ.
Max.
Unit
---
---
-4.8
A
---
---
-24
A
---
---
-1.2
V
---
18.3
---
nS
---
7.2
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current
2,4
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-4A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
US3003
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
48
ID=-4A
RDSON (mΩ)
43
38
33
28
4
Fig.1 Typical Output Characteristics
6
-VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
12
-IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
150
US3003
P-Ch 30V Fast Switching MOSFETs
10000
F=1.0MHz
Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
25
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (R θJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000