MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER Features: TO-251 * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V IC 5.0 A PD 20.0 1.5 W Tj +150 ˚C Tstg -55 to +150 ˚C Collector Current Collector Power Dissipation @TC=25°C @TA=25°C Junction Temperature Storage Temperature Range WEITRON http://www.weitron.com.tw 1/4 13-Apr-07 MJP122 ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Symbol Min Typ Max Unit BVCBO 100 - - V BVCEO 100 - - V BVEBO 5.0 - - V ICBO - - 10 µA ICEO - - 10 µA IEBO - - 2 mA - Collector-Base Breakdown Voltage IC=1mA Collector-Emitter Breakdown Voltage IC=30mA Emitter-Base Breakdown Voltage IE=3mA Collector Cutoff Current VCB=100V Collector Emitter Cutoff Current VCE =50V Emitter Cutoff Current VEB =5.0V ON CHARACTERISTICS DC Current Gain VCE=4V, IC=4A VCE=4V, IC=8A hFE(1) hFE(2) 1000 100 - 12000 - VCE(sat) - - 2.0 4.0 V VBE(sat) - - 4.5 V Base-Emitter On Voltage VCE =4A, IC=4A V(on) - - 2.8 V Output Capacitance VCB=10V, IE=0, f=0.1MHz Cob - 200 - pF Collector-Emitter Saturation Voltage IC =4A, IB =16mA IC =8A, IB =80mA Base-Emitter Saturation Voltage IC =8A, IB =80mA WEITRON http://www.weitron.com.tw 2/4 13-Apr-07 MJP122 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 13-Apr-07 MJP122 TO-251 Outline Dimensions unit:mm E A G 4 H B 1 2 Dim A B C D E G H J K L M N J 3 N M K D C L TO-251 M in 6 .4 0 6 .8 0 0 .5 0 2 .2 0 0 .4 5 1 .0 0 5 .4 0 0 .4 5 0 .9 0 6 .5 0 - M ax 6 .8 0 7 .2 0 0 .8 0 2 .3 0 2 .5 0 0 .5 5 1 .6 0 5 .8 0 0 .6 9 1 .5 0 0 .9 0 1 . Em it t er 2 . Base 3 . Collect or WEITRON http://www.weitron.com.tw 4/4 13-Apr-07