WHXPCB AO4447A

万和兴电子有限公司 www.whxpcb.com
AO4447A
30V P-Channel MOSFET
General Description
Product Summary
• The AO4447A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.This
device is ideal for load switch and battery protection
applications.
VDS
ID (at VGS = -10V)
RDS(ON) (at VGS = -10V)
RDS(ON) (at VGS = -4.5V)
RDS(ON) (at VGS = -4V)
-30V
-17A
< 7mΩ
< 8mΩ
< 9mΩ
• RoHS and Halogen-Free Compliant
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
Rg
D
G
G
S
S
S
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Power Dissipation
C
B
TA=25°C
Junction and Storage Temperature Range
Rev.2.0: June 2013
±20
V
ID
-13
IDM
-160
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
3.1
PD
TA=70°C
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
Units
V
-17
TA=70°C
Pulsed Drain Current
-30
Maximum
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
31
59
16
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4447A
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID =-250µA, VGS = 0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS =±16V
VGS(th)
Gate Threshold Voltage
VDS =VGS ID =-250µA
-0.8
ID(ON)
On state drain current
VGS =-10V, VDS =-5V
-160
TJ = 55°C
TJ=125°C
VGS =-4V, ID =-13A
6.9
9
VDS =-5V, ID =-17A
70
VSD
Diode Forward Voltage
IS =-1A,VGS = 0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
-0.62
4580
VGS=0V, VDS=-15V, f=1MHz
V
mΩ
S
-1
V
-3
A
5500
pF
755
pF
564
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
7
8
IS
Gate resistance
5.5
8.5
Forward Transconductance
µA
A
7
gFS
Rg
-1.6
6.5
Static Drain-Source On-Resistance
Crss
-1.3
VGS =-4.5V, ID =-15A
RDS(ON)
Units
µA
-5
±10
VGS =-10V, ID =-17A
Output Capacitance
Max
V
VDS =-30V, VGS = 0V
IDSS
Coss
Typ
pF
160
210
Ω
87
105
nC
41
nC
12.8
nC
Gate Drain Charge
17
nC
Turn-On DelayTime
180
ns
260
ns
1.2
µs
9.7
µs
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=-10V, VDS=-15V, ID=-17A
VGS=-10V, VDS=-15V
RL=-0.9Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-17A, dI/dt=300A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs
77
Body Diode Reverse Recovery Time
40
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board #REF!
with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2013
www.aosmd.com
Page 2 of 5
AO4447A
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
160
-10V
140
-4V
VDS=-5V
-3.5V
-4.5V
120
80
60
80
-ID(A)
-ID (A)
100
-3V
40
60
40
125°C
20
VGS= -2.5V
20
25°C
0
0
0
1
2
3
4
5
0
10
2
3
4
Normalized On
On-Resistance
1.8
8
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
VGS=-4V
6
VGS=-4.5V
VGS=-10V
4
2
0
5
10
15
1.6
VGS= -10V
ID= -17A
1.4
VGS= -4.5V
ID= -15A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
20
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+02
ID= -17A
16
1E+01
125°
IS (A)
RDS(ON) (mΩ
Ω)
1E+00
12
1E-01
125°C
8
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
4
25°C
OUT OF SUCH APPLICATIONS OR USES OF 25°
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source
Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)
Rev.2.0: June 2013
www.aosmd.com
Page 3 of 5
AO4447A
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
10
-VGS (Volts)
8
Capacitance (pF)
VDS=-15V
ID= -17A
6
Ciss
5000
4000
3000
4
2000
2
1000
Coss
Crss
0
0
0
0
20
40
60
80
10µs
RDS(ON)
limited
25
30
1ms
10ms
1
100ms
10s
TJ(Max)=150°C
TA=25°C
0.01
0.1
100
10
DC
0.01
1000
Power (W)
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
100
IF=-6.5A, dI/dt=100A/µs
1
-VDS (Volts)
10
100
1
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JA Normalized Transient
Thermal Resistance
15
10000
1000
0.1
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
5
100
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse
T
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Rev.2.0: June 2013
0.001
www.aosmd.com
100
1000
Page 4 of 5
AO4447A
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.2.0: June 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5