WHXPCB AO4566

万和兴电子有限公司 www.whxpcb.com
AO4566
30V N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
ID (at VGS=10V)
30V
12A
RDS(ON) (at VGS=10V)
< 11mΩ
RDS(ON) (at VGS=4.5V)
< 17mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentG
VGS
TA=25°C
Units
V
±20
V
12
ID
TA=70°C
Maximum
30
9.4
A
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAS
15
A
Avalanche energy L=0.1mH C
EAS
11
mJ
36
V
VDS Spike
Power Dissipation B
100ns
TA=25°C
VSPIKE
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Aug 2012
2.5
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
1.6
RθJA
RθJL
www.aosmd.com
Typ
42
70
20
°C
Max
50
85
30
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4566
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VDS=5V, ID=12A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
±100
nA
2.3
V
9
11
12.5
15
13.5
17
mΩ
1
V
3.5
A
45
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12A
1
mΩ
S
542
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
1.8
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
1.3
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
233
pF
31
pF
2
3
Ω
9
12.2
nC
4.3
5.8
nC
2.2
nC
Qgd
Gate Drain Charge
1.7
nC
tD(on)
Turn-On DelayTime
4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
3.5
ns
18
ns
3
ns
IF=12A, dI/dt=500A/µs
9.7
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
11.5
ns
nC
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2012
www.aosmd.com
Page 2 of 5
AO4566
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
4.5V
VDS=5V
4V
6V
40
40
30
30
ID(A)
ID (A)
3.5V
125°C
20
20
10
10
25°C
VGS=3.0V
0
0
0
1
2
3
4
0
5
18
2
3
4
5
Normalized On-Resistance
1.6
16
VGS=4.5V
14
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
8
VGS=10V
6
VGS=10V
ID=12A
1.4
17
5
2
10
VGS=4.5V
1.2
1
ID=10A
0.8
4
0
3
0
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
1.0E+01
ID=12A
1.0E+00
20
40
125°C
1.0E-01
15
IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-02
10
1.0E-03
25°C
5
25°C
1.0E-04
1.0E-05
0
2
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2012
4
10
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4566
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
8
Ciss
Capacitance (pF)
VGS (Volts)
600
6
4
400
Coss
200
2
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
IDM limited
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
ID (Amps)
100µs
1ms
1.0
RDS(ON) @10V
limited
10ms
0.1
Power (W)
10.0
100
10
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
1E-05
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
* VGS > minimum VGS at which RDS(ON) is specified
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2012
www.aosmd.com
Page 4 of 5
AO4566
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 0: Aug 2012
Isd
L
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
www.aosmd.com
Page 5 of 5