WILLAS FM120-M+ BCW69LT1 THRU BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reverse leakage current and thermal resistance. PNPbetter Silicon SOD-123H • Low profile surface mounted application in order to Featrues optimize board space. We declare that the material of product loss, high efficiency. • Low power compliance with RoHS requirements. capability, low forward voltage drop. • High current Pb-Free package is available surge capability. • High 1 overvoltage protection. • Guardring RoHS product for for packing code suffix ”G” BASE • Ultra Halogen freehigh-speed product for switching. packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS Mechanical data Rating Symbol 0.146(3.7) 0.130(3.3) 3 COLLECTOR Value 0.071(1.8) 0.056(1.4) 2 EMITTER Unit • Epoxy : UL94-V0 rated flame retardant Collector–Emitter Voltage V CEO – 45 Vdc • Case : Molded plastic, SOD-123H – 5.0 Vdc, Emitter–Base EBO • TerminalsVoltage :Plated terminals,Vsolderable per MIL-STD-750 2026 Collector CurrentMethod — Continuous IC – 100 • Polarity : Indicated by cathode band Mounting Position : Any • THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram Characteristic 0.040(1.0) 0.024(0.6) SOT–23 0.031(0.8) Typ. 0.031(0.8) Typ. mAdc Dimensions in inches and (millimeters) Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PD 225 mW TA = 25°C Ratings at 25℃ ambient temperature unless otherwise specified. 1.8 mW/°C Derate above 25°C Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, Junction to Ambient RθJA 556 °C/W For capacitive load, derate current by 20% Total Device Dissipation 300 FM140-MH mW D FM130-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOLPFM120-MH RATINGS Alumina Substrate, (2) TA = 25°C 2.4 mW/°C Marking Code 12 13 14 15 16 18 10 115 120 Derate above 25°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V RRM Thermal Resistance, Junction to Ambient RθJA 417 °C/W 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS Junction and Storage Temperature TJ , Tstg –55 to +150 °C Maximum DC Blocking Voltage 0.012(0.3) Typ. Maximum Average Forward Rectified Current DEVICE MARKING Peak Forward Surge Current ms single half sine-wave BCW69LT1 = H1; 8.3 BCW70LT1 = H2 superimposed on rated load (JEDEC method) VDC 20 30 40 50 ELECTRICAL CHARACTERISTICS (TA = 25°CRunless otherwise noted.) ΘJA Typical Junction Capacitance (Note 1) Characteristic CJ OFF CHARACTERISTICS TSTG Storage Temperature Range TJ Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) 80 100 150 200 1.0 30 IFSM Typical Thermal Resistance (Note 2) Operating Temperature Range 60 IO Symbol -55 to +125 Min 40 120 Max Unit -55 to +150 - 65 to +175 V (BR)CEO – 45 — Vdc FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –100SYMBOL µAdc, VFM120-MH V (BR)CES – 50 — Vdc EB = 0 ) 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) IR Cutoff Current @T A=125℃ Rated Collector DC Blocking Voltage Maximum Average Reverse Current at @T A=25℃ – 5.0 I CEO — 0.5 Vdc (VCE = –20 Vdc, I E = 0 ) — 10 – 100 nAdc (V — – 10 µAdc NOTES: = –20 Vdc, I = 0 , T = 100°C) CE 1- Measured at 1 MHZ andEapplied Areverse voltage of 4.0 VDC. V (BR)EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2- Thermal Resistance From Junction to Ambient 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW69LT1 THRU BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize CHARACTERISTICS board space. ELECTRICAL (TA = 25°C unless otherwise noted) (Continued) loss, high efficiency. • Low power Characteristic • High current capability, low forward voltage drop. ON CHARACTERISTICS • High surge capability. DC Currentfor Gain overvoltage protection. • Guardring ( IC= –2.0 mAdc, Vswitching. BCW69LT1 CE = –5.0 Vdc ) high-speed • Ultra silicon junction. • Silicon epitaxial planar chip, metalBCW70LT1 Collector–Emitter Saturation Voltage standards of parts meet environmental • Lead-free • Symbol Min 0.146(3.7) 0.130(3.3) 120 215 260 500 — – 0.3 Vdc – 0.6 – 0.75 Vdc Max Unit 0.012(0.3) Typ. hFE — V CE(sat) MIL-STD-19500 ( IC = – 10 mAdc, /228 IB = –0.5 mAdc ) RoHS product for Base–Emitter Onpacking Voltage code suffix "G" Halogen free product for packing code suffix "H" ( IC = – 2.0 mAdc, V CE = – 5.0Vdc ) V BE(on) 0.071(1.8) 0.056(1.4) Mechanical data SMALL–SIGNAL CHARACTERISTICS UL94-V0 rated flame retardant • Epoxy Output: Capacitance : Molded plastic,f = SOD-123H • Case V CB = –10Vdc, 1.0 MHz) ( I E= 0 , Noise Figure • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) C obo — NF (V CE = – 5.0 Vdc, I C = – 0.22026 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Method BCW69LT1 pF 0.031(0.8) Typ. — • Polarity : Indicated by cathode band Ordering Information • Mounting Position : Any Device Marking • Weight : Approximated 0.011 gram 7.0 0.031(0.8) Typ. 10 dB Dimensions in inches and (millimeters) Shipping 3000/Tape&Reel H1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS BCW70LT1 H2 3000/Tape&Reel Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW69LT1 THRU BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package TYPICAL NOISE CHARACTERISTICS Features outline = – 5.0 offers Vdc, T A = 25°C) • Batch process design, excellent power(Vdissipation CE I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) Mechanical data 1.0 SOD-123H 10.0 BANDWIDTH = 1.0 Hz 0.146(3.7) R ~ ~ 0.130(3.3) 7.0 8 better reverse leakage current and thermal resistance. profile surface mounted application in order to optimize board space. BANDWIDTH = 1.0 Hz • Low power loss, high efficiency. R S~ ~0 7.0 low forward voltage drop. • High current capability, IC=10 µA • High surge capability. 5.0 • Guardring for overvoltage protection. switching. • Ultra high-speed 30µA 3.0 • Silicon epitaxial planar 100µAchip, metal silicon junction. environmental standards of • Lead-free parts meet 300µA /228 1.0mA 2.0 MIL-STD-19500 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • 10Low 5.0 S 2.0 100µA 0.5 30µA 0.3 0.2 10µA 0.040(1.0) 0.024(0.6) 20 50 100 RATINGS R S , SOURCE RESISTANCE ( Ω ) R S , SOURCE RESISTANCE ( Ω ) 0.5 dB 5.0k 12 20 VRRM Maximum RMS Voltage 1.0k 14 500 Maximum DC Blocking Voltage 20 VRMS 2.0dB VDC 3.0 dB Maximum Average Forward Rectified Current IO 200 5.0 dB 100 Peak Forward Current ms70 single 10 Surge20 30 8.350 100half sine-wave 200 300 500 IFSM700 1.0K I C , COLLECTOR CURRENT (µA) RΘJA Typical Thermal Resistance (Note 2) Figure 3. Narrow Band, 100 Hz CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range R S , SOURCE RESISTANCE ( Ω ) Storage1.0M Temperature Range CHARACTERISTICS 100k 50k 13 30 14 40 10k 5.0k 2.0k VF 50k 20k 10k IR @T A=125℃ Rated DC Blocking Voltage 0.5dB NOTES: 5.0k 2.0k 1- Measured at 1 MHZ and applied reverse voltage of 4.01.0dB VDC. 1.0k 2- Thermal Resistance From Junction to Ambient 2.0dB 3.0 dB 5.0 dB 500 200 100 10 150.5 dB 16 50 60 21 28 35 42 50030 40 50 60 1.0k 200 100 10 20 30 50 70 100 1.0 30200 18 80 1.0dB 56 10 100 115 150 120 200 70 105 140 2.080dB 3.0 dB 100 150 200 5.0 dB 300 500 700 1.0K I C , COLLECTOR CURRENT (µA) 40 120 -55 to +150 Figure 4. Narrow Band, 1.0 kHz -55 to +125 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 100k Maximum Average Reverse Current at @T A=25℃ BANDWIDTH = 1.0 Hz 10 Hz to 15.7KHz Maximum Forward Voltage at 1.0A DC Dimensions in inches and (millimeters) 200k TSTG 500k 200k 10k Figure 2. Noise Current superimposed on rated load (JEDEC method) 5.0k 20k FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH dB Maximum Recurrent Peak Reverse1.0 Voltage 2.0k 2.0k 1.0M 20k 10k 1.0k 0.031(0.8) Typ. = 1.0 Hz MAXIMUM RATINGSBANDWIDTH AND ELECTRICAL CHARACTERISTICS 500k Ratings at 25℃ ambient temperature unless otherwise specified. 200k Single 100k phase half wave, 60Hz, resistive of inductive load. 50k For capacitive load, derate current by 20% Marking Code 500 f, FREQUENCY (Hz) • Polarity : Indicated by cathode band NOISE FIGURE CONTOURS • Mounting Position : Any (V CE = – 5.0 Vdc, T A = 25°C) • Weight : Approximated 0.011 gram 200 0.031(0.8) Typ. Figure 1.2026 Noise Voltage Method 500k 0.071(1.8) 0.056(1.4) 300µA 1.0 0.7 0.1 • Epoxy : UL94-V0 rated flame retardant 10 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k • Case : Molded plastic, SOD-123H , f, FREQUENCY (Hz) • Terminals :Plated terminals, solderable per MIL-STD-750 1.0M 0.012(0.3) Typ. IC=1.0mA 3.0 20 30 50 70 100 200 300 Noise 0.50 Figure is Defined 0.70as: 0.85 0.5 2 NF = 20 log 10 e n 2 + 4KTRS + I n R S2 4KTR S 10 0.9 0.92 1/ 2 ( –––––––––––––––) e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10 –23 j/°K) T = Temperature of the Source Resistance (°K) R s = Source Resistance ( Ω ) 500 700 1.0K I C , COLLECTOR CURRENT (µA) Figure 5. Wideband 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M BCW69LT1 THRU BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H TYPICAL STATIC CHARACTERISTICS in order to • Low profile surface mounted application optimize board space. 0.6 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.4 Halogen free product for packing code suffix "H" Mechanical data 0.05 0.1 0.2 0.5 1.0 2.0 Method 2026 5.0 10 1.2 V, VOLTAGE (VOLTS) VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 @ V = 1.0 V 0.4 0.2 Maximum DC Blocking Voltage V CE(sat) @ I C /I B = 10 IO Maximum 0 Average Forward Rectified Current 50 IFSM , COLLECTOR CURRENT (mA) superimposed on ratedI Cload (JEDEC method) 0.1 0.2 0.5 1.0 200 µA 150 µA 40 100 µA 50µA 20 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 0 0 5.0 10 15 20 25 30 35 40 Figure 7. Collector Characteristics 1.6 0.8 ∗ θ VC for V CE(sat) 25°C to 125°C 0 –55°C to 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M BE(on) CE Maximum Recurrent Peak Reverse Voltage V 250 µA 300µA *APPLIES for I C / I B< h FE / 2 RATINGS AND ELECTRICAL CHARACTERISTICS V BE(sat) @ I RATINGS /I B = 10 C Marking0.6Code 0.071(1.8) 0.056(1.4) Dimensions in inches and (millimeters) V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Ratings at 25℃ ambient temperature unless otherwise specified. Single1.0 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.8 I B= 400 mA 350µA 60 20 1.4 T J=25°C MAXIMUM T A = 25°C PULSE WIDTH =300 µs DUTY CYCLE<2.0% 80 θ V , TEMPERATURE COEFFICIENTS (mV/°C) 0.002 0.0050.010.02 0.012(0.3) Typ. 100 : UL94-V0 rated flame retardant • • Case : Molded plastic, SOD-123H , •0 Terminals :Plated terminals, solderable per MIL-STD-750 0.2 Epoxy • Polarity : Indicated by CURRENT cathode band I B , BASE (mA) Figure 6. Collector Position : Any Saturation Region • Mounting • Weight : Approximated 0.011 gram 0.146(3.7) 0.130(3.3) I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) • Low power loss, high efficiency. • High current capability, low forward voltage drop. 1.0 • High surge capability. • Guardring for overvoltage protection. T J = 25°C • Ultra high-speed switching. 0.8 • Silicon epitaxial planar chip, metal silicon junction. 50 mA standards 10 environmental mA 100 mA of • Lead-free I C= parts 1.0 mA meet 2.0 5.0 10 Peak Forward Surge Current 8.3 ms single half sine-wave Figure 10. Typical Thermal Resistance (Note 2) “On” 20 Voltages RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range –0.8 13 14 40 15 50 16 60 18 10 25°C 80 to 125°C 100 115 150 120 200 28 35 θ VB for V BE 40 50 42 56 105 140 150 200 30 21 –1.6 30 –2.4 100 0.1 0.2 70 –55°C to 25°C 80 100 60 1.0 5.0 10 0.5 1.0 2.0 20 50 30 I C , COLLECTOR CURRENT (mA) 100 40 Figure 11. Temperature Coefficients 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW69LT1 THRU BCW70LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features TYPICAL DYNAMIC CHARACTERISTICS power dissipation offers • Batch process design, excellent better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 500 1000 30 20 10 0.146(3.7) 0.130(3.3) 700 VCC= –3.0 V 0.012(0.3) Typ. IC /I B= 10 IB1=IB2 T J= 25°C 500 ts 300 0.071(1.8) 0.056(1.4) 200 t, TIME (ns) t, TIME (ns) • Low power loss, high efficiency. V CC= 3.0 V 300 • High current capability, low forward voltage drop. IC /I B= 10 200 • High surge capability. T J= 25°C • Guardring for overvoltage protection. 100 • Ultra high-speed switching. 70 • Silicon epitaxial planar chip, metal silicon junction. 50 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffixt r"G" Halogen free product for packing code suffix "H" td @ V BE(off)= 0.5 V 100 70 50 tf 30 Mechanical data 20 0.040(1.0) 0.024(0.6) 7.0 • Epoxy : UL94-V0 rated flame retardant 5.0 : Molded plastic, • Case 2.0 1.0 3.0 5.0 7.0 SOD-123H 10 20 30 50 70 100 , • Terminals :Plated terminals, solderable per MIL-STD-750 10 –1.0 –2.0 –3.0 –5.0 –7.0 –10 0.031(0.8) Typ. 10.0 T J= 25°C J 7.0 V CE=20 V RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM 300 RATINGS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 70 Maximum 50 DC Blocking Voltage 0.5 0.7 1.0 2.0 20 VDC 3.0 5.0 7.0 10 20 30 50 IO I C , COLLECTOR CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Figure 12. Current–Gain — Bandwidth Product Maximum Average Forward Rectified Current 3.0 2.0 13 30 14 40 15 50 16 60 18 80 C ob 10 100 115 150 120 200 21 28 35 42 56 70 105 140 150 200 1.0 30 0.05 40 0.1 superimposed on rated load (JEDEC method) r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 0.5 Storage Temperature Range 0.3 CHARACTERISTICS 0.1 0.50 FIGURE 16 IR @T A=125℃ -55 to +150 t 1.0 2.0 10 20 50 100 0.92 200 READ TIME AT t 1 (SEE AN–569) Z θJA(t) = r(t) • RθJA 1 t 5.0 0.9 0.70DUTY CYCLE, D 0.85 = t1 / t 2 P(pk) SINGLE PULSE 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 50 D CURVES 0.5 APPLY FOR POWER PULSE 10 TRAIN SHOWN 0.01 0.01 2- Thermal Resistance From Junction to Ambient 0.01 0.02 0.05 0.1 0.2 0.5 20 0.03 NOTES: 0.02 10 - 65 to +175 VF 0.05 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.02 100 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum0.1 Forward Voltage at 1.0A DC 0.07 0.05 80 2.0 40 120 TSTG 0.2 1.0 1.0 V R , REVERSE VOLTAGE (VOLTS) 30 Figure 13. Capacitance -55 to +125 TJ Operating Temperature Range 60 0.5 CJ 0.7 Typical Junction Capacitance (Note 1) D = 0.5 50 0.2 RΘJA Typical Thermal Resistance (Note 2) 1.0 0.2 C ib 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 20 –70 –100 0.031(0.8) Typ. Dimensions in inches and (millimeters) Ratings at 25℃ ambient temperature 5.0 V unless otherwise specified. 200phase half wave, 60Hz, resistive of inductive load. Single For capacitive load, derate current by 20% –50 Figure 11. Turn–Off Time • Polarity : Indicated by cathode band • Mounting Position : Any 500 • Weight : Approximated 0.011 gram T = 25°C 100 Marking Code –30 I C , COLLECTOR CURRENT (mA) Figure 10. Turn–On Time C, CAPACITANCE (pF) f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Method 2026 –20 2 500 T J(pk) – T A = P (pk) Z 1.0k 2.0k 5.0k 10k θJA(t) 20k 50k 100k t, TIME (ms) Figure 14. Thermal Response 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCW69LT1 THRU BCW70LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. I C , COLLECTOR CURRENT (nA) 104 103 • Low power loss, high efficiency. V CCcurrent = 30 V capability, low forward voltage drop. • High • High surge capability. I CEO protection. • Guardring for overvoltage • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. I CBO of • Lead-free parts meet environmental standards DESIGN NOTE: USE OF THERMAL RESPONSE DATA 0.130(3.3) 0.146(3.7) 0.012(0.3) Typ. A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device 0.071(1.8) 102 thermal response the normalized effective transient thermal0.056(1.4) resistance of Figure 14 was calculated for various duty cycles. 101 To find Z θJA(t) , multiply the value obtained from Figure 14 by the MIL-STD-19500 /228 AND RoHS product for packing code suffix "G" steady state value R θJA . • I CEX @ V BE(off) = 3.0 V 100 Halogen free product for packing code suffix "H" Example: Mechanical data Dissipating 2.0 watts peak under the following conditions: 10–1 0.040(1.0) t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading 10–2 • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. of r(t) , is 0.22. –4• Terminals –2 0 :Plated +20 +40 +60 +80 +100 +120 +140 +160 terminals, solderable per MIL-STD-750 The peak rise in junction temperature is therefore 2026 T J , Method JUNCTION TEMPERATURE (°C) ∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C. Dimensions in inches and (millimeters) • Polarity : Indicated cathode band Figure 15. Typicalby Collector Leakage Current For more information, see AN–569. • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ BCW69LT1 THRU BCW70LT1 FM1200-M Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .122(3.10) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon .106(2.70) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-123H 0.031(0.8) Typ. .083(2.10) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .110(2.80) .063(1.60) .047(1.20) .006(0.15)MIN. 0.146(3.7) 0.130(3.3) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 .008(0.20) • Polarity : Indicated by cathode band .080(2.04) • Mounting Position : Any .070(1.78) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .004(0.10)MAX. RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 VRMS 14 21 .020(0.50) VDC .012(0.30) IO 20 30 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 IFSM Dimensions in inches and (millimeters) RΘJA CJ -55 to +125 TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 0.037 Maximum Forward Voltage at 1.0A DC 0.037 Maximum Average Reverse Current at @T0.95 A=25℃ Rated DC Blocking Voltage VF @T A=125℃ 0.95 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.079 2.0 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.