WILLAS FM120-M+ C945 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTOR (NPN) optimize board space. • Low power loss, high efficiency. FEATURE • High current capability, low forward voltage drop. z Excellent hFE capability. Linearity • High surge Guardring for overvoltage protection. • z Low noise • Ultra high-speed switching. z Pb-Free is available epitaxial planar chip, metal silicon junction. • Siliconpackage Lead-free parts meet environmental standards • RoHS product for packing code suffix ”G”of MIL-STD-19500 /228 for packingfor code suffix "G"code suffix • RoHS product Halogen free product packing Halogen free product for packing code suffix "H" SOT-230.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 1. BASE 2. EMITTER 3. COLLECTOR “H” Mechanical data MARKING:CR • Epoxy : UL94-V0 rated flame retardant MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) : Molded plastic, SOD-123H • Case , terminals, solderable per MIL-STD-750 Value Symbol • Terminals :Plated Parameter VCBO VCEO VEBO IC 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Unit Method 2026 60 Collector-Base Voltage • Polarity : Indicated by cathode band Collector-Emitter Any • Mounting Position :Voltage • Weight : Approximated Emitter-Base Voltage 0.011 gram Collector Current -Continuous V Dimensions in inches and (millimeters) 50 V 5 V 150 mA 200 mW 150 ℃ -55-150 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Power Dissipation PCRatings atCollector 25℃ ambient temperature unless otherwise specified. half wave, 60Hz, resistive of inductive load. Junction Temperature TJSingle phase For capacitive load, derate current by 20% Tstg Storage Temperature RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code 12 20 13 30 14 40 15 50 16 60 18 80 35 Min42 Typ 56 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) VRRM Maximum Recurrent Peak Reverse Voltage VRMS Symbol Maximum RMS Voltage Parameter Maximum DC Blocking Voltage VDC 14 21 28 Test conditions 20 30 40 50 Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 IE=0.1mA, IC=0 5 Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave Emitter-base breakdown voltage superimposed on rated load (JEDEC method) IFSM V(BR)EBO Collector cut-offResistance current (Note 2) Typical Thermal ICBORΘJA VCB=60V, IE=0 Typical Junction Collector cut-offCapacitance current (Note 1) ICERCJ VCE=55V,R=10MΩ Emitter cut-off current Storage Temperature Range IEBO TSTG VEB=5V , IC=0 hFE(1) VCE=6 V , IC=1mA TJ Operating Temperature Range DC current gain CHARACTERISTICS 60 60 80 Max70 100 115 150 120 200 Unit105 140 V 1.0 30 40 120 -55 to +125 10 100 150 200 V V 0.1 0.1 uA uA -55 to +150 - 65 to +175 130 0.1 uA 400 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH hFE(2) VF Maximum Forward Voltage at 1.0A DC Collector-emitter voltage Maximum Average saturation Reverse Current at @T A=25℃VCE(sat) Rated DC Blocking Voltage voltage Base-emitter saturation 0.012(0.3) Typ. IR @T A=125℃ VBE(sat) VCE=6 V , IC=0.1mA 40 0.50 0.70 0.9 0.85 IC=100mA, IB=10mA 0.5 0.3 V IC=100mA, IB=10mA 10 1 V 0.92 Transition frequency NOTES: fT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Collector output capacitance 2- Thermal Resistance From Junction to Ambient Noise figure Cob NF VCE=6V,IC=10mA,f =30 MHz 150 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ 4 3.0 pF 10 dB CLASSIFICATION OF hFE(1) Rank L H Range 130-200 200-400 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ C945 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Typical Characteristics • Low profile surface mounted application in order to optimize board space. IC a 8 • 6 Mechanical data 21uA RoHS product for packing code suffix "G" Halogen free product for 18uA packing code suffix "H" 15uA hFE —— 1000 0.012(0.3) Typ. IC Ta=100℃ 0.071(1.8) 0.056(1.4) Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT 24uA MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) hFE (mA) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Static Characteristic 12 • Guardring for overvoltage protection. COMMON • Ultra high-speed switching. 30uA EMITTER junction. 10 • Silicon epitaxial planar chip, metal silicon ℃ T =25 27uA • Lead-free parts meet environmental standards of 100 0.040(1.0) 0.024(0.6) 12uA • Epoxy : UL94-V0 rated flame retardant 4 • Case : Molded plastic, SOD-123H9uA , 6uA 2 • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. 30 Method 2026 • Polarity : Indicated by cathode band 0 2 4 6 8 Position : Any • Mounting COLLECTOR-EMITTER VOLTAGE V • Weight : Approximated 0.011 gram VCEsat —— 300 CE RATINGS T =100℃ 100 150 (mA) IC Ta=25℃ VRRM 12 20 VRMS 14 Peak Forward Surge Current 8.3 ms single half sine-wave 10 10 30 superimposed on rated load (JEDEC method) COLLECTOR CURRENT IC Typical Thermal Resistance (Note 2) Typical Junction Capacitance Cob /(Note Cib 1) —— (mA) VCB / VEB 15 Operating Temperature Range Storage Temperature Range C CAPACITANCE 16 60 18 10 80 Ta=100℃100 115 150 120 200 21 28 35 42 56 70 105 140 30 400 40 50 60 80 100 150 200 200 0.1 0.3 1 PC -55 to0.25 +125 TJ f=1MHz 1.0 30 3 40 120 —— β=10 10 COLLECTOR CURRENT CJ 100 150 30 IC (mA) Ta -55 to +150 - 65 to +175 0.20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Cib Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES:5 Cob 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.50 0.70 0.15 0.9 0.85 0.5 0.92 10 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE 2012-06 15 50 COLLECTOR POWER DISSIPATION PC (W) (pF) CHARACTERISTICS 0 0.1 14 40 RΘJA Ta=25℃ Rated DC Blocking Voltage 13 600 30 β=10 IFSM100 150 IE=0 /IC=0 TSTG 10 Maximum Forward Voltage at 1.0A DC Ta=25℃ IO 3 20 VDC Maximum Average Forward Rectified Current 1 800 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M a Maximum DC Blocking Voltage 2012-0 IC VBEsat —— 1000 Maximum 30 RMS Voltage 30 10 COLLECTOR CURRENT (V) IC Maximum Recurrent Peak Reverse Voltage Dimensions in inches and (millimeters) 3 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 10 0.7 12 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=6V IB=3uA 10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 10 3 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS C945 SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .063(1.60) .047(1.20) .122(3.10) .106(2.70) Halogen free product for packing code suffix "H" Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .080(2.04) Marking Code Maximum Recurrent Peak Reverse Voltage .070(1.78) .083(2.10) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .110(2.80) Method 2026 .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- VRRM 12 20 13 30 14 40 15 50 16 60 18 10 115 150 120 200 .003(0.08) 80 100 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M @T A=125℃ IR .020(0.50) NOTES: .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.5 0.92 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.D WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP.