WILLAS FM120-M+ DTC123JUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-323 • Low power loss, high efficiency. • High current capability, low forward voltage drop. surge capability. • High Epitaxial Planar Die Construction • Guardring for overvoltage protection. Complementary NPN Types Available • Ultra high-speed switching. Built-in• Bias Resistors Silicon epitaxial planar chip, metal silicon junction. Pb-Free package is available meet environmental standards of • Lead-free parts MIL-STD-19500 /228code suffix ”G” RoHS product for packing RoHS product for packing code suffix "G" • Halogen free product for packing code suffix “H” Halogen free product for packing code suffix "H" Epoxy meets UL 94 V-0 flammability rating Mechanical data Moisure Sensitivity Level 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) • • 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • • • 0.012(0.3) Typ. .004(0.10)MIN. Features .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Absolute maximum ratings @ 25к .054(1.35) .045(1.15) Method 2026 Symbol Parameter Min Typ Max Unit .087(2.20) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band --VCC Supply voltage 50 --V .070(1.80) VIN Input voltage -5 --+12 V • Mounting Position : Any Pd Power dissipation --200 --mW •Junction Weight temperature : Approximated 0.011 gram Tj --150 --ć Tstg Storage temperature -55 --150 ć MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IO 100 Output current mA IC(MAX) 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .056(1.40) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Symbol Parameter Min Typ MaximumInput Recurrent Peak VoltageA) 0.5 VRRM--VI(off) voltage (VCCReverse =5V, IO=100 --- VRMS --VI(on) Maximum RMS Voltage(VO=0.3V, IO=5mA) VO(on) Output voltage (IO=5mA,Ii=0.25mA) --0.1 Maximum DC Blocking Voltage VDC II Input current (VI=5V) ----MaximumOutput Average Forward IO(off) current (VCCRectified =50V, VICurrent =0) --- IO -- GI DC current gain (VO=5V, IO=10mA) 80 --Forward Current 8.3 ms single half sine-wave1.54 RPeak InputSurge resistance IFSM2.2 1 on ratedratio load (JEDEC method) R2superimposed /R1 Resistance 17 21 Transition frequency Thermal Resistance (Note 2) fTypical --- RΘJA250 T (Vo =10V, Io =5mA, f=100MHz) Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Storage Temperature Range 12 Max 20 --141.1 0.3 20 3.6 0.5 --2.86 26 --- 13 Unit 30V 21V V 30 mA A K¡ 15 50 .047(1.20) 16 18 60 80 28 35 42 40 50 60 .004(0.10)MAX. 1.0 30 14 40 40 120 MHz -55 to +125 56 70 105 140 80 100 150 200 .016(0.40) .008(0.20) Suggested Solder Pad Layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH *Marking: E42 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 120 200 - 65 to +175 Maximum Forward Voltage at 1.0A DC 115 150 in inches and -55(millimeters) to +150 Dimensions TSTG CHARACTERISTICS 10 100 .043(1.10) .032(0.80) RATINGS Electrical Characteristics @ 25к @T A=125℃ 0.50 0.70 0.85 0.70 0.9 0.5 IR 0.90 0.92 10 NOTES: 1.90 mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC123JUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Typical Characteristics Package outline Features Characteristics design, excellent power dissipation offers • Batch process ON INPUT VOLTAGE VI(ON) 10 3 1 Mechanical data 0.3 SOD-123H 3 (mA) (V) 30 OFF Characteristics 10 VCC=5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 I0 better reverse leakage current and thermal resistance. VO=0.3V • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. standards of • Lead-free parts meet environmental Ta=25℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Ta=100℃ Halogen free product for packing code suffix "H" OUTPUT CURRENT 100 0.071(1.8) 0.056(1.4) Ta=100℃ 0.3 Ta=25℃ 0.1 0.03 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 0.1• Case0.3 10 100 30 : Molded1plastic, 3SOD-123H , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.01 0.2 0.4 0.031(0.8) Typ. 0.6 INPUT VOLTAGE O 0.8 VI(OFF) 1.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO • Mounting Position : Any • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) GI —— IO 1000 IO/II=20 VO=5V 100 RATINGS Marking Code VRRM 12 20 Maximum RMS Voltage 30 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 10 Peak Forward Surge Current 8.3 ms single half sine-wave 1 10 30 3 OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) VR Temperature Range CHARACTERISTICS 115 150 120 200 28 35 42 56 70 105 140 50 60 80 100 150 200 3 0.3 1.0 330 1 OUTPUT CURRENT TSTG 400 40 120 PD 10 IO 30 100 (mA) -55 to +150 —— Ta - 65 to +175 350 (mW) VF (pF) PD IR POWER DISSIPATION CO OUTPUT CAPACITANCE 10 100 40 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 18 80 30 TJ @T A=125℃ 6 16 60 21 -55 to +125 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 15 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 8 Maximum Forward Voltage at 1.0A DC 14 40 1 0.1 f=1MHz Ta=25℃ 13 30 10 CJ Typical Junction Capacitance (Note 1) —— Ta=25℃ 100 RΘJA Typical Thermal Resistance (Note 2) 10 Storage 100 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Ta=100℃ Maximum Recurrent Peak Reverse VoltageTa=25℃ Operating Temperature Range CO Ta=100℃ GI VO(ON) OUTPUT VOLTAGE 300 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 4 2- Thermal Resistance From Junction to Ambient 2 300 0.50 0.70 0.92 0.5 10 250 200 0.9 0.85 DTC123JUA 150 100 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.