WILLAS FM120-M+ DTC124EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features • better reverse is leakage current and thermal resistance. Pb-Free package available • Low profile surface mounted application in order to RoHS product for packing optimize board space. code suffix ”G” Low power loss, • Halogen free producthigh for efficiency. packing code suffix “H” High current capability, low forwardrating voltage drop. • Epoxy meets UL 94 V-0 flammability High surge capability. • Moisure Sensitivity Level 1 for overvoltage protection. Built-in• Guardring bias resistors enable the configuration of an inverter circuit Ultra high-speed switching. • without connecting external input resistors • Silicon epitaxial planar chip, metal silicon junction. The bias resistors consist of thin-film resistors with complete • Lead-free parts meet environmental standards of isolation to allow negative biasing of the input. They also have the • SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .067(1.70) .059(1.50) .035(0.90) .028(0.70) • • • SOT-523 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 advantage almostforcompletely packing codeeliminating suffix "G" parasitic effects. • RoHSofproduct Only theHalogen on/off free conditions need to setsuffix for "H" operation, making product for packingbe code deviceMechanical design easy data VCC VIN IO IC(MAX) Pd Tj Tstg Supply voltage Method 2026 Input voltage • Polarity : Indicated by cathode band Output current • Mounting Position : Any Power dissipation • Weight Approximated 0.011 gram Junction:temperature Storage temperature ---10 50 --30 100 150 150 --- -------55 .043(1.10) .035(0.90) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. --40 Unit V V --- mA ----150 mW ć ć 0.031(0.8) Typ. .069(1.75) .057(1.45) • Epoxy : UL94-V0 rated flame retardant Case : Molded plastic,@ SOD-123H Absolute• maximum ratings 25к , terminals, solderable per MIL-STD-750 Symbol • Terminals :Plated Parameter Min Typ Max .014(0.35) .010(0.25) .004(0.10)MIN. • Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 40 120 -55 to +125 .006(0.15) .035(0.90) .028(0.70) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25к For capacitive load, derate current by 20% .008(0.20) Symbol Parameter Min Typ Max Unit .004(0.10) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH RATINGS --V VI(off) --0.5 Input voltage (VCC=5V, IO=100A) Marking Code 14 15 16 18 10 115 120 ----- 12 3.0 13 V V (VO=0.2V, IO=5mA) I(on) 40 50 60 80 100 150 200 Recurrent Peak (IReverse Voltage VMaximum Output voltage = ---VRRM 0.1 20 0.3 30 V O(on) O/II 10mA/0.5mA) II = Input Voltage current (VI 5V) ---VRMS --- 14 0.36 21 mA 28 35 42 56 70 105 140 Maximum RMS A IO(off) Output current (VCC = =50V, VI 0) ----0.5 .004(0.10)MAX. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC GI DC current gain (VO=5V, = IO 5mA) 56 ----R1 Input resistance 15.4IO 22 Maximum Average Forward Rectified Current 1.0 K¡ 28.6 R /R Resistance ratio 0.8 1.0 1.2 2 1 Peak Forward Surge Current 8.3 ms single half sine-wave Transition frequency FSM 30 .014(0.35) I fT --250 --MHz (VOon =10V, =5mA, f=100MHz) superimposed ratedIOload (JEDEC method) -55 to +150 Dimensions in inches and (millimeters) - 65 to +175 TSTG CHARACTERISTICS *Marking: Maximum Forward Voltage at 1.0A DC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 25 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC124EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Typical Characteristics Package outline Features Characteristics design, excellent power dissipation offers • Batch process ON INPUT VOLTAGE VI(ON) 10 3 1 SOD-123H 3 (mA) (V) 30 Mechanical data 0.3 OFF Characteristics 10 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=100℃ 1 I0 better reverse leakage current and thermal resistance. VO=0.2V • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Ta=25℃metal silicon junction. • Silicon epitaxial planar chip, of • Lead-free parts meet environmental Ta=100standards ℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" OUTPUT CURRENT 100 0.071(1.8) 0.056(1.4) 0.3 Ta=25℃ 0.1 0.03 0.040(1.0) • Epoxy : UL94-V0 rated flame retardant 0.1 0.1• Case0.3 10 100 30 : Molded1plastic, 3SOD-123H , OUTPUT CURRENT I (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 0.024(0.6) V =5V CC 0.01 0.4 0.8 0.031(0.8) Typ. 1.2 1.6 INPUT VOLTAGE O VI(OFF) 2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO : Any • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) GI 1000 IO/II=20 —— IO VO=5V 100 RATINGS Maximum Recurrent Peak Reverse Voltage Ta=25℃ VRRM 12 20 Maximum RMS Voltage 30 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 10 Peak Forward Surge Current 8.3 ms single half sine-wave 1 10 30 3 OUTPUT CURRENT superimposed on rated load (JEDEC method) IO (mA) TSTG CO IR Maximum Average Reverse Current at @T A=25℃ @T A=125℃ OUTPUT CAPACITANCE 6 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 3 1.0 330 1 0.3 OUTPUT CURRENT 40 120 PD —— 10 5 IO 30 100 (mA) -55 to +150 Ta - 65 to +175 350 (mW) (pF) VF Rated DC Blocking Voltage 10 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 8 Maximum Forward Voltage at 1.0A DC 18 80 30 400 f=1MHz Ta=25℃ CHARACTERISTICS 16 60 21 -55 to +125 PD Temperature Range 15 50 TJ VR 14 40 1 0.1 POWER DISSIPATION —— 13 30 10 CJ Typical Junction Capacitance (Note 1) 10 Storage Ta=25℃ 100 RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range CO Ta=100℃ 100 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH Ta=100℃ Marking Code GI VO(ON) OUTPUT VOLTAGE Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% DC CURRENT GAIN (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 300 4 2- Thermal Resistance From Junction to Ambient 2 300 0.50 DTC124ESA 0.70 0.5 150 100 0.92 10 250 200 0.9 0.85 DTC124EUA/CA/KA DTC124EE DTC124EM 50 0 0 2012-06 2012-0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.