WILLAS FM120-M+ 150mA Surface Mount Switching Diode-100V 1.0A SURFACE MOUNT SCHOTTKY SOT-23 BARRIERPackage RECTIFIERS -20V- 200V MMBD4448 THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .110(2.80) .063(1.60) .047(1.20) SOD-123H .122(3.10) .106(2.70) Halogen free product packing code suffix "H" for for overvoltage protection. • Guardring Sensitivity Level 1 high-speed switching. • Ultra * Moisture • Silicon epitaxial planar chip, metal silicon junction. MECHANICAL DATAmeet environmental standards of • Lead-free parts Case: SOT-23 plastic case. MIL-STD-19500 /228 Top View product for code suffix "G"2026 SINGLE • RoHS Terminals : Solderable perpacking MIL-STD-750,Method Halogen free product for packing code suffix "H" 3 Standard packaging: 8mm tape .083(2.10) FEATURES • Batch process design, excellent power dissipation offers better reverse * Fast switching Speed. leakage current and thermal resistance. Low profile surface mounted application in order to • * Electrically ldentical to Standerd JEDEC optimize board space. * High•Conductance Low power loss, high efficiency. * Surface Mount Package ldeally Suited for Automatic current capability, low forward voltagelnsertion. drop. • High * RoHS product for packing code suffix "G" • High surge capability. .006(0.15)MIN. Package outline SOT-23 Features 0.071(1.8) 0.056(1.4) .008(0.20) .080(2.04) .070(1.78) Mechanical data Weight: approximately 0.0003 ounces, 0.0084 grams .003(0.08) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 1 2 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) Method 2026 • Polarity : Indicated by cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Position : Any • Mounting Ratings at 25℃ ambient temperature unless otherwise specified. Single•phase half wave, 60Hz, resistive of inductive load. Weight : Approximated 0.011 gram .020(0.50) .012(0.30) .055(1.40) .035(0.89) .004(0.10)MAX. Dimensions in inches and (millimeters) For capacitive load, derate current by 20% MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MMBD4448 RATINGS UNIT Ratings at 25℃ ambient temperature unless otherwise SYMBOL specified. A3 Marking Code Single phase half wave, 60Hz, resistive of inductive load. 75 Reverse Voltage Volts VR For capacitive load, derate current by 20% 100 Peak Reverse Voltage Volts V RM SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS 50 RMS Voltage Volts VRMS Marking Code 12 13 14 15 16 18 10 115 120 75 Maximum DC Blocking Voltage V DC 20 30 40 50 60 80 100Volts 150 200 Maximum Recurrent Peak Reverse Voltage Vo VRRM 150 Maximum Average Forward Current mAmps IAV Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS 4 Peak Forward Surge Current 1.0us Amps IFSM Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC 250 Power Dissipation Derate Above Ta=25 ℃ mW PTOT Am Maximum Average Forward Rectified Current IO RΘJA 1.0 357 Typical Thermal Resistance ℃/W 4 Typical Junction (Note CJ PF Peak Forward Surge Capacitance Current 8.3 ms single half 1) sine-wave 30 IFSM Am -55~+150 ℃ Operating and Storage Temperature Range J ,TSTG T superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Electrical Ratings @TA=25℃ Typical Junction Capacitance (Note 1) CHARACTERISTICS CJ TJSYMBOL 40 120 ℃ P MMBD4448 UNIT -55 to +150 ℃ 0.72 @ 0.005A DC 65 to +175 Storage Temperature Range TSTG ℃ VF Volts Maximum Forward Voltage 1.00 @0.1A DC 2.5 @75V DC uAmps FM1150-MH FM1200-MH UN CHARACTERISTICS SYMBOLIRFM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH Maximum Average Reverse Current 25 @25V DC nAmps 0.9 Vo Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Reverse Recovery Time (Note 2) 4 Trr nsec 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA Note: 10 @T A=125℃ Rated DC Blocking Voltage 1. CJ at VR=0, f=1MHZ NOTES: 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω Operating Temperature Range RΘJA -55 to +125 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4448 150mA Surface Mount Switching Diode-100V 1.0A SURFACE MOUNT SCHOTTKY SOT-23 BARRIERPackage RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to board space. 10 0.146(3.7) 0.130(3.3) TJ =125 OC REVERSE CURRENT, u A FORWARD CURRENT, mA 1000 optimize • Low power loss, high efficiency. • High current capability, low forward voltage drop. High surge capability. • 100 • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 10 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1 Mechanical data 0.012(0.3) Typ. 1.0 0.071(1.8) 0.056(1.4) O TJ =75 C 0.1 0.01 TJ =25 OC 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 : Molded plastic, SOD-123H • Case 0.6 0.8 1.0 0.2 0.4 1.2 1.4 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.001 0 0.031(0.8) 20 Typ. 40 60 80 0.031(0.8) 100 Typ. REVERSE VOLTAGE, Volts FORWARD VOLTAGE, Volts Method 2026 • Polarity : Indicated by cathode band 1-TYPICAL FORWARD CHARACTERISTIC Mounting Position : Any • FIG. • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) FIG. 2-TYPICAL REVERSE CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS P D , POWER DISSIPATION (mW) Ratings at 25℃ ambient temperature unless otherwise specified. 500 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 400 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code 300 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum 200 RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum 100 Average IO IFSM Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 100 superimposed 0on rated load50(JEDEC method) 150 RΘJA Typical Thermal Resistance (Note 2) AMBIENT TEMPERATURE( OC) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range FIG. 3 POWER DERATING CURVE Storage Temperature Range TJ 1.0 30 200 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.