WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TheMMBT3946DW1T1 device is a spin–off of our popular optimize board space. power loss, high efficiency. • Low SOT–23/SOT–323 three–leaded device. It is designed for general • High current capability, low forward voltage drop. purpose amplifier applications and is housed in the SOT–363 • High surge capability. six–leadedforsurface mountprotection. package. By putting two discrete devices in overvoltage • Guardring high-speed switching. • Ultra one package, this device is ideal for low–power surface mount • Silicon epitaxial planar chip, metal silicon junction. applications where board space is at a premium. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • hFE, 100–300 product for packing code suffix "G" • RoHS• Low V , < 0.4 V 0.146(3.7) 0.130(3.3) 6 1 2 3 Halogen free product for packing code suffix "H" • Simplifies Circuit Mechanical dataDesign CEO SOT-363 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) Unit Vdc For capacitive load, derate current by 20% Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” 3 2 1 (NPN) 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U (PNP) RATINGS -40 Q Marking Code 12 13 14 15 16 1 18 10 120 Q2 115 Emitter-Base Voltage V EBO Vdc 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM (NPN) 6.0 V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V -5.0 Maximum DC(PNP) Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC 4 6 5 Collector Current-Continuous I mAdc A Maximum Average Forward Rectified Current C IO 1.0 0MBT3946DW1T1* (NPN) 200 Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A *Q1 PNP -200 superimposed (PNP) on rated load (JEDEC method) Q2 NPN ℃ 40 Typical Thermal Resistance (Note 2) RΘJA HBM>16000, Electrostatic Discharge ESD V ORDERING INFORMATION 120 Typical Junction Capacitance (Note 1) CJ MM>2000 Device -55 to +125 -55 to +150 Shipping Operating Temperature Range TJ Marking THERMAL CHARACTERISTICS 65 to +175 Storage Temperature Range TSTG MMBT3946DW1T1 46 3000Units/Reel Characteristic Symbol Max Unit FM120-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U CHARACTERISTICS Total Package Dissipation(1) PSYMBOL 150 FM130-MH mW D V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 T A = 25°C 0.5 Maximum Average Reverse Current at @T A=25℃ m Thermal Resistance Junction RθJAIR 833 °C/W 10 @T A=125℃ Rated DC Blocking Voltage to Ambient NOTES: Junction and Storage TJ,Ts t g 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.040(1.0) 0.024(0.6) We declare that the material of product compliance with RoHS requirements. (NPN) 40 CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL (PNP) -40 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Collector-Base Voltage V CBO Vdc 50.071(1.8) 4 0.056(1.4) CE(sat) • Reduces Board : UL94-V0 ratedSpace flame retardant • Epoxy • Reduces Component Count • Case : Molded plastic, SOD-123H • Available in terminals, 8 mm, 7–inch/3,000 Tape and Reel, • Terminals :Plated solderableUnit per MIL-STD-750 Method 2026 • Device Marking:MMBT3946DW1T1 = 46 • Polarity : Indicated by cathode band MAXIMUM RATINGS Position : Any • Mounting Rating Symbol Value •Collector-Emitter Weight : Approximated 0.011 gram Voltage V 0.012(0.3) Typ. –55 to +150 °C Temperature Range 2- Thermal Resistance From Junction to Ambient 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Package Characteristic Symbol Features • Batch process design, excellent power dissipation offers OFFbetter CHARACTERISTICS reverse leakage current and thermal resistance. Low profile surface mounted application • Collector–Emitter Breakdown Voltage(2)in order to V(BR)CEO optimize board space. (I = 1.0 mAdc, I = 0) (NPN) C B efficiency. power loss, high • Low current capability, low forward voltage drop. •(IHigh (PNP) C = –1.0 mAdc, IB = 0) • High surge capability. Collector–Base Breakdownprotection. Voltage V(BR)CBO • Guardring for overvoltage (IC = high-speed 10 µAdc, Iswitching. (NPN) E = 0) • Ultra Silicon epitaxial planar chip, metal silicon junction. • (I = –10 µAdc, I = 0) (PNP) C E • Lead-free parts meet environmental standards of Emitter–Base Breakdown Voltage V (BR)EBO MIL-STD-19500 /228 product for packing code suffix "G" • RoHS (NPN) (IE = 10 µAdc, IC = 0) Halogen free product for packing code suffix "H" (IE = –10 µAdc, data IC = 0) Mechanical (PNP) Base Cutoff Current : UL94-V0 rated flame retardant • Epoxy (VCE =: Molded 30 Vdc, VEB =SOD-123H 3.0 Vdc) (NPN) plastic, • Case Vdc, terminals, VEB = –3.0 Vdc) per MIL-STD-750 (PNP) , CE = –30 • (V Terminals :Plated solderable Method 2026 Collector Cutoff Current • Polarity : Indicated by = cathode band (VCE = 30 Vdc, VEB 3.0 Vdc) Mounting Position : Any • (V CE = –30 Vdc, VEB = –3.0 Vdc) • Weight : Approximated 0.011 gram outline Min Max Unit SOD-123H Vdc 40 –40 – – 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Vdc 60 –40 – – 0.071(1.8) 0.056(1.4) Vdc 6.0 –5.0 – – IB L 0.040(1.0) nAdc0.024(0.6) 0.031(0.8) Typ. – 50 – –50 – – 50 –50 0.031(0.8) Typ. nAdc ICEX (NPN) (PNP) Dimensions in inches and (millimeters) ON CHARACTERISTICS (2) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DC Current Gain hFE (IC = 10 mAdc, VCE = 1.0 Vdc) RATINGS 50 mAdc, VCE = 1.0 Vdc) Maximum Recurrent Peak Reverse Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) Marking Code (IC = Maximum RMS Voltage Maximum DC Blocking Voltage (IC = –0.1 mAdc, VCE = –1.0 Vdc) Maximum Average Forward Rectified Current (IC = –1.0 mAdc, VCE = –1.0 Vdc) Peak Forward Surge Current 8.3 ms single half sine-wave (IC = –10 mAdc, VCE = –1.0 Vdc) superimposed on rated load (JEDEC method) (IC = –50 mAdc, VCE Typical Thermal Resistance (Note 2) = –1.0 Vdc) (IC = –100 mAdc, VCE Typical Junction Capacitance (Note 1) = –1.0 Vdc) Operating Collector–Emitter Temperature Range Saturation Storage Temperature Range – Ratings at 25℃ ambient temperature unless otherwise specified. (IC =half 0.1wave, mAdc, VCE = 1.0 ofVdc) Single phase 60Hz, resistive inductive load. (NPN) For capacitive derate current 20% (IC = load, 1.0 mAdc, VCE =by 1.0 Vdc) VRMS 14 21 28 35 42 56 70 105 140 V VDC 20 30 40 50 60 80 100 150 200 V IO IFSM (PNP) RΘJA CJ -55 to +125 Voltage TJ (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 CHARACTERISTICS mAdc, IB = 5.0 mAdc) Maximum (I Forward Voltage at 1.0A DC C = –10 mAdc, IB = –1.0 mAdc) Maximum Average Reverse Current at @T A=25℃ (IC = –50 mAdc, IB = –5.0 mAdc) Rated DC Blocking Voltage 40 – 70 – FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 300 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH 100 12 13 14 15 10 115 120 6016 –18 20 30 40 50 60 80 100 150 200 V VRRM 30 – @T A=125℃ TSTG (NPN) NOTES: (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) 2- Thermal Resistance From Junction to Ambient (IIC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) 1.0 30 40 120 – – 300 – – A A ℃ -55 to +150 - 65 to +175 Vdc – 0.2 – 0.3 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF (PNP) 0.50 0.70– –0.25 0.85 0.5 – –0.4 IR Base–Emitter Saturation Voltage V CE(sat) 60 80 100 60 30 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 VBE(sat) (NPN) (PNP) 0.65 – –0.65 – U V m Vdc 0.85 0.95 –0.85 –0.95 2. Pulse Test: Pulse Width < 300 µs; Duty Cycle <2.0%. 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Package outline Features Characteristic Symbol Min Max • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SMALL–SIGNAL CHARACTERISTICS mounted application in order to • Low profile surface optimize board space. Product Current–Gain – Bandwidth • Low power loss, high efficiency. (IC• High = 10current mAdc,capability, VCE = 20low Vdc, f = 100 MHz) (NPN) forward voltage drop. (IC• High = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) (PNP) surge capability. for overvoltage protection. • Guardring Output Capacitance • Ultra high-speed switching. (V•CB = 5.0epitaxial Vdc, IEplanar = 0, f chip, = 1.0metal MHz) Silicon silicon junction. (NPN) (V•CB = –5.0 Vdc, IE = 0, f = 1.0 MHz) (PNP) Lead-free parts meet environmental standards of MIL-STD-19500 /228 Input RoHS Capacitance product for packing code suffix "G" • (VEB = 0.5 free Vdc, IC = 0, = 1.0 MHz) (NPN) Halogen product forfpacking code suffix "H" Unit SOD-123H fT MHz 0.146(3.7) 0.130(3.3) 300 250 – – 0.012(0.3) Typ. Cobo pF – – 4.0 4.5 – – 8.0 10.0 100 400 Cibo 0.071(1.8) 0.056(1.4) pF data (VMechanical (PNP) EB = –0.5 Vdc, IC = 0, f = 1.0 MHz) 0.040(1.0) Epoxy : UL94-V0 rated flame retardant • hie kΩ 0.024(0.6) Input Impedance Case : Molded 0.031(0.8) Typ.1.0 0.031(0.8) Typ. (V•CE = 10 Vdc, ICplastic, = 1.0 SOD-123H mAdc, f = 1.0 kHz) (NPN) 10 , Terminals :Plated solderable per MIL-STD-750 (V•CE = –10 Vdc, IC =terminals, –1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12 Method 2026 Voltage Feedback Ratio hre X 10–4 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0 • Mounting Position : Any (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10 • Weight : Approximated 0.011 gram Small–Signal Current Gain hFE – RATINGS CHARACTERISTICS 100 (VCE = 10MAXIMUM Vdc, IC = 1.0 mAdc, f AND = 1.0ELECTRICAL kHz) (NPN) 400 Ratings at 25℃ ambient unless otherwise specified. (PNP) (VCE = –10 Vdc, Itemperature f = 1.0 kHz) C = –1.0 mAdc, Single phase half wave, 60Hz, resistive of inductive load. Output Admittance For capacitive load, derate current by 20% hoe µmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 40 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) (PNP) 3.0 60 Marking Code 12 13 14 15 16 18 10 115 120 NoiseRecurrent Figure Peak Reverse Voltage NF dB100 20 30 40 50 60 80 150 200 Maximum VRRM 14(NPN)21 28– 35 5.0 42 56 70 105 140 (VCERMS =5.0 Vdc,IC=100 µAdc, RS=1.0 kΩ, Vf=1.0kHz) Maximum Voltage RMS Maximum Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC (VCEDC =–5.0 Vdc,I =–100 µAdc, R =1.0 kΩ, f=1.0kHz) (PNP) – 4.0 C S Maximum Average Forward Rectified Current IO 1.0 SWITCHING CHARACTERISTICS Delay Time (VCC8.3=ms 3.0 Vdc, = –0.5IFSM Vdc) (NPN) td – 35 Peak Forward Surge Current single half V sine-wave BE 30 superimposed on rated load method) (V (JEDEC = –3.0 Vdc, CC Typical Thermal Resistance (Note 2) Rise Time VBE = 0.5 Vdc) (I = 10 mAdc, IB1 = 1.0 mAdc) CJ C Typical Junction Capacitance (Note 1) = –10 Operating Temperature(IRange C RΘJA Storage Temperature Storage Time Range (V CC (V mAdc, IB1 = –1.0 TmAdc) J = 3.0 Vdc, IC = 10 TSTG mAdc) = –3.0 Vdc, IC = –10 mAdc) CC CHARACTERISTICS Fall Time (IB1 at= 1.0A IB2 =DC1.0 Maximum Forward Voltage mAdc) Rated DC Blocking Voltage B2 – (NPN) (PNP) -55 to +125 (NPN) tr ts (PNP) 35 – – – – 40 35 120 35 ns -55 to +150 - 65 to200 +175 225 FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH ns VF Maximum Average Reverse @TmAdc) A=25℃ I = at–1.0 (I =Current B1 (PNP) @T A=125℃ IR (NPN) (PNP) 0.50 tf – 0.70 – 50 0.85 0.9 0.575 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TYPICAL ELECTRICAL CHARACTERISTICS • Low profile surface mounted application in order to MMBT3946DW1T1 optimize board space. • Low power loss, high efficiency. (NPN) • High current capability, low forward voltage drop. • High surge capability. +3 V DUTY CYCLE = 2% t1 10 < t1< 500 s • Guardring for overvoltage protection. +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V • Ultra high-speed switching. 275 • Silicon epitaxial planar chip, metal silicon junction. 10 k standards of • Lead-free parts meet environmental 0 -0.5 VMIL-STD-19500 /228 Cs < 4 pF* • RoHS product for packing < 1 ns code suffix "G" Halogen free product for packing code suffix "H" SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. +3 V 0.071(1.8) 275 0.056(1.4) 10 k Cs < 4 pF* 1N916 -9.1 V' Mechanical data < 1 ns • Epoxy : UL94-V0 rated flame retardant * Total shunt capacitance of test jig and connectors • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable Figure 1. Delay and Rise T ime per MIL-STD-750 Figure 2. Storage and Fall T ime Equivalent T est Circuit Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Equivalent T est Circuit Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram TYPICAL TRANSIENT CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS TJ = 25°C Maximum Average Forward Rectified Current Cobo 2.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 12 20 VRMS 14 VDC 20 IO IFSM RΘJA 2.0 3.0 5.07.0 10CJ 20 30 40 REVERSE BIAS VOLTAGE (VOL Operating Temperature Range TJ TS) Typical Thermal Resistance (Note 2) 1.0 0.1 Capacitance 0.2 0.3 0.5 (Note 0.7 1.01) Typical Junction Storage Temperature Range Figure 3. Capacitance CHARACTERISTICS 3000 13 1000 30 700 21 500 30 300 200 100 70 50 1.0 -55 to +125 (NPN) VCC= 40 V IC/IB = 10 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 QT 100 150 200 1.0 30 2.0 3.0 QA 40 5.0 7.0 10120 20 30 50 70 100 IC , COLLECTOR -55 to(mA) +150 CURRENT 200 - 65 to +175 TSTG Figure 4. Charge Data SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 5000 2000 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH RATINGS Marking5.0 Code Maximum Recurrent Peak Reverse Voltage Cibo Maximum RMS Voltage 3.0 Maximum DC Blocking Voltage TJ = 125°C Q, CHARGE (pC) CAPACITANCE (pF) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 10 For capacitive load, derate current by 20% (NPN) 7.0 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE better reverse leakage current and thermal resistance. 500 • Low profile surface mounted application inICorder /IB = 10to 300optimize board space. 200 • Low power loss, high efficiency. • High current capability, low forward voltage drop. 100 • High surge capability. 70 • Guardring for overvoltage protection.tr @ VCC= 3.0 V 50 • Ultra high-speed switching. 500 • Silicon epitaxial planar chip, metal silicon junction. 30 • Lead-free parts meet environmental standards40ofV 20 MIL-STD-19500 /228 15 V • RoHS product for packing code suffix "G" 10 (NPN) code 7Halogen free product for packing t d @ VOB = 0 Vsuffix "H"2.0 V 5 Mechanical data 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 rated flame retardant • Epoxy : UL94-V0 IC, COLLECT OR CURRENT (mA) • Case : Molded plastic, SOD-123H 30 20 50 MAXIMUM RATINGS ANDICELECTRICAL /IB = 20 VDC 5.0 7.0 10 20 30 200 50 70 100 0.040(1.0) 0.024(0.6) Figure 6. Rise Time 0.031(0.8) Typ. , 0.031(0.8) Typ. 500 VCC= 40 V 300 200 Dimensions in inches and (millimeters) IB1 = IB2 IC/IB = 20 100 70 50 CHARACTERISTICS 20 30 8. Fall Time 50Figure 60 80 40 NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 255C, Bandwidth = 1.0 Hz) RΘJA Typical Thermal Resistance (Note 2) 100 150 200 40 120 CJ Typical Junction Capacitance (Note 1) 2.0 3.0 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS 30 IFSM superimposed on rated load (JEDEC method) NF, NOISE FIGURE (dB) -55 to -55 to +150 Operating TJ 14+125 12 Temperature Range SOURCE f = 1.0 kHz I = 1.0 mA - 65 to +175 Storage Temperature RangeRESISTANCE = 200 TSTG C 12 IC = 1.0 mA 10 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH IC =FM150-MH 0.5 mA FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 10 RESISTANCE = 200 8 Forward VoltageSOURCE Maximum at 1.0A DC 0.92 VF 0.50 0.70 0.85 I = 50 A 0.9 C IC = 0.5 mA 0.5 8 Maximum Average Reverse Current at @T A=25℃ IR 6 Blocking Voltage IC = 100 A 10 @T A=125℃ Rated DC SOURCE RESISTANCE = 1.0 k 6 IC = 50 A NOTES: 4 4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NF, NOISE FIGURE (dB) 1.0 IO Maximum Average Forward Rectified Current (NPN) IC/IB= 10 IC /Ispecified. Ratings30at 25℃ ambient temperature unless otherwise 30 B = 10 20 Single 20 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 (NPN) 10 (NPN) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS 7 7 Marking Code 5 12 135 14 15 16 18 10 115 120 200 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM IC, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage Figure 7. Storage Time 0.071(1.8) 0.056(1.4) IC, COLLECTOR CURRENT (mA) t's = ts - 1/8 tf IB1= IB2 100 • Weight : Approximated 0.011 gram 70 50 t f , FALLTIME (ns) t's , STORAGETIME (ns) 300 I /I = 20 • Polarity by cathode band C B : Indicated IC/IB = 10 200 • Mounting Position : Any 0.012(0.3) Typ. 100 70 7 5 Figure 5. Turn±On Time Method 2026 VCC= 40 V IC /IB = 10 0.146(3.7) 0.130(3.3) 10 • Terminals :Plated terminals, solderable per MIL-STD-750 500 SOD-123H 300 200 t r , RISETIME (ns) TIME (ns) TYPICAL ELECTRICAL CHARACTERISTICS Package outline MMBT3946DW1T1 Features offers • Batch process design, excellent power dissipation(NPN) 2- Thermal Junction to Ambient 2 Resistance SOURCEFrom RESISTANCE = 500 0 0.1 IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 9. Noise Figure 2012-06 2012-0 2 (NPN) 20 40 100 0 (NPN) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline TYPICAL ELECTRICAL CHARACTERISTICS dissipation offers • Batch process design, excellent power MMBT3946DW1T1 better reverse leakage current and thermal resistance. (NPN) to • Low profile surface mounted application in order Features SOD-123H optimize board space. hoe , OUTPUTADMITTANCE (µmhos) hfe , CURRENTGAIN • Low power loss, high efficiency. h PARAMETERS • High current capability, low forward voltage drop. (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 100 300 • Silicon epitaxial planar chip, metal silicon junction. (NPN)standards of 50 • Lead-free parts meet environmental MIL-STD-19500 /228 200 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 100 • Epoxy : UL94-V0 rated flame retardant 70 • Case : Molded plastic, SOD-123H , 50 • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band 30 5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 : Any • Mounting Position IC, COLLECTOR CURRENT (mA) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) (NPN) 20 10 0.040(1.0) 0.024(0.6) 5 0.031(0.8) Typ. 0.031(0.8) Typ. 2 1 10 0.146(3.7) 0.130(3.3) 0.1 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 5.0 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 Figure 12. Output Admittance Figure 11. Current Gain hie ,INPUTIMPEDANCE (k OHMS) 5.0 RATINGS 10 7.0 (NPN) 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum 2.0 Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage 1.0 Maximum DC Blocking Voltage VRMS 14 VDC 20 IO Maximum 0.5 Average Forward Rectified Current hre , VOLTAGE FEEDBACK RATIO (x 10 -4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 20at 25℃ ambient temperature unless otherwise specified. Ratings Single phase half wave, 60Hz, resistive of inductive (NPN) load. 10 For capacitive load, derate current by 20% IFSM 0.2 superimposed 5.0 0.1 on rated 0.2 load 0.3 (JEDEC 0.5 method) 1.0 2.0 3.0 Typical Thermal Resistance 2) RΘJA IC, (Note COLLECTOR CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave CJ Typical Junction Capacitance (Note 1) Operating TemperatureFigure Range 13. Input Impedance TJ Storage Temperature Range 10 3.0 13 30 2.0 21 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 30 1.0 40 50 60 80 100 150 200 0.7 0.5 0.1 1.0 30 5.0 0.2 0.3 0.5 1.0 2.0 3.0 40CURRENT (mA) IC, COLLECTOR 120 Figure 14. Voltage Feedback-55 Ratio to +150 10 -55 to +125 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M MMBT3946DW1T1 THRU Transistors Dual General Purpose 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produ SOD-123+ PACKAGE Package outline TYPICAL ELECTRICAL CHARACTERISTICS dissipation offers • Batch process design, excellent powerMMBT3946DW1T1 better reverse leakage current and thermal resistance. SOD-123H (NPN) • Low profile surface mounted application in order to hFE , DC CURRENTGAIN (NORMALIZED) Features 2.0 optimize board space. • Low power loss, high efficiency. T = +125 °C J • High current capability, low forward voltage drop. +25°C 1.0• High surge capability. • Guardring for overvoltage protection. 0.7• Ultra high-speed switching. -55°C 0.5• Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) (NPN) VCE= 1.0 V0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.3 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.2 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.1 0.2 0.3 0.7 1.0 0.1 plastic,0.5 SOD-123H • Case : Molded 2.0 3.0 5.0 7.0 10 20 0.031(0.8) Typ. 30 50 70 100 200 0.031(0.8) Typ. IC , COLLECTOR ,CURRENT (mA) Figure 15. DC Current Gain Method 2026 1.0• Polarity : Indicated by cathode band I = 1.0 mA 10 mA 30 mA 100 mA C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings 0.6 at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.4 RATINGS Maximum RMS Voltage 0 0.01 0.02 0.03 Maximum DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 0.05 VRRM 12 20 13 30 14 40 15 50 VRMS 14 21 28 35 42 30 0.5 0.7 40 1.0 50 VDC 0.2 20 0.3 IB , BASE CURRENT (mA) IO Figure 16. Collector Saturation Region 2.0 60 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.0 CJ 56 3.0 80 5.0 40 120 (NPN) -55 to +125 0.5 18 80 10 100 115 150 120 200 70 105 140 150 200 7.0 100 10 1.0 30 IFSM RΘJA Typical Thermal Resistance (Note 2) 1.2Junction Capacitance (Note 1) Typical (NPN) TJ = 25°C Operating Temperature Range 1.0 Storage Temperature Range 16 60 0.07 0.1 Maximum Average Forward Rectified Current -55 to +150 +25°C TO+125°C - 65 to +175 θVC FOR VCE(sat) 0.8 0 -55°C TO +25°C FM1150-MH FM1200-M FM1100-MH CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH VBE@ VCE=1.0V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 -0.5 0.6 0.5 Maximum Average Reverse Current at @T A=25℃ IR -55°C TO+25 °C 10 @T A=125℃ Rated0.4 DC Blocking Voltage -1.0 VCE(sat)@ IC/IB =10 +25°C TO+125 °C NOTES: θVB FOR V BE(sat) -1.5 0.2 TJ VBE(sat)@IC/IB =10 TSTG V ,VOLTAGE (VOLTS) TJ = 25 °C (NPN) Marking Code 0.2 Maximum Recurrent Peak Reverse Voltage Dimensions in inches and (millimeters) • Mounting Position : Any 0.8• Weight : Approximated 0.011 gram COEFFICIENT(mV/ °C) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) • Terminals :Plated terminals, solderable per MIL-STD-750 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages 2012-0 2012-06 100 200 -2.0 0 20 40 60 80 100 120 140 160 180 200 IC , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE TYPICAL ELECTRICAL CHARACTERISTICS Package MMBT3946DW1T1 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. (PNP) • Low profile surface mounted application in order to Features optimize board space. 3V • Low power loss, high efficiency. 275drop. • High current capability, low forward voltage < 1 ns High surge capability. • 10 k +0.5 V • Guardring for overvoltage protection. • Ultra high-speed switching. Cs < 4 pF* • Silicon epitaxial planar chip, metal silicon junction. 10.6 V 300meet ns environmental standards of • Lead-free parts • +9.1 V Method 2026 0.012(0.3) Typ. 0.071(1.8) Cs0.056(1.4) < 4 pF* 10 < t1< 500 s Figure 20. Storage and Fall T ime Equivalent Test Circuit 7.0 CAPACITANCE (pF) 0.031(0.8) Typ. Dimensions in inches and (millimeters) 5000 VCC= 40 V (PNP) 3000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I /I = 10 Cibo RATINGS 2000 VRRM 12 20 VRMS 14 Maximum DC Blocking Voltage VDC 20 13 300 30 200 21 100 30 70 50 1.0 Maximum IO 1.0 Average Forward Rectified Current 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10 20 30 40 Peak Forward Surge Current 8.3 ms single half (VOLTS) sine-wave REVERSE BIAS IFSM superimposed on rated load (JEDEC method) Figure 21. Capacitance Typical Junction Capacitance (Note 1) 500 Operating Temperature Range (PNP) 300 Storage Temperature Range 200 (PNP) CB 1000 700 500 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH Maximum 2.0 Recurrent Peak Reverse Voltage Maximum RMS Voltage Typical Thermal Resistance (Note 2) 0.040(1.0) 0.024(0.6) TJ = 25°C TJ = 125°C Ratings at 25℃ ambient temperature unless otherwise specified. 5.0phase half wave, 60Hz,Cresistive Single of inductive load. obo For capacitive load, derate current by 20% 3.0 Marking Code 0.031(0.8) Typ. TYPICAL TRANSIENT CHARACTERISTICS Q, CHARGE (pC) 10 275 10.9 V t1 DUTY CYCLE MIL-STD-19500 /228 = 2% DUTY CYCLE = 2% RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" capacitance of test jig and connectors * Total shunt • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram RΘJA CJ TJ IC/IB = 10 14 40 Q T 15 50 16 60 18 80 500 -55 to +125 300 200 10 100 115 150 120 200 28 35 42 56 QA 70 105 140 40 50 60 80 100 150 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC , COLLECTOR30 CURRENT (mA) Figure 22. Charge Data 40 120 TSTG 200 -55 to +150 (PNP) - 65 to +175 VCC= 40 V IB1 = IB2 t f , FALLTIME (ns) IC/IB = 20 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 100 100 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 70 70 t @ V = 3.0 V 0.5 Maximum r CC 50 Average Reverse Current at @T A=25℃ 50 IR 10 @T A=125℃ Rated DC Blocking Voltage 15 V 30 30 I /I C B= 10 20 NOTES:20 40 V 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 10 2.0 V 2- Thermal Resistance From Junction to Ambient 7 7 t d@ VOB= 0V 5 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TIME (ns) 0.146(3.7) 0.130(3.3) 1N916 Figure 19. Delay and Rise Time 3V < 1 ns 10 k rated flame • Epoxy : UL94-V0 Equivalent Test retardant Circuit • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 SOD-123H 0 Mechanical data outline IC, COLLECTOR CURRENT (mA) Figure 23. Turn- On Time 2012-06 2012-0 IC, COLLECTOR CURRENT (mA) Figure 24. Fall Time WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE TYPICAL ELECTRICAL CHARACTERISTICS Package outline MMBT3946DW1T1 Features • Batch process design, excellent power dissipation offers (PNP) better reverse leakage current and thermal resistance. SOD-123H application order to • Low profile surface mounted TYPICAL AUDIOinSMALL±SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) optimize board space. • Low power loss, high efficiency. (VCE = ±5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) • High current capability, low forward voltage drop. 5.0 12 surge capability. • High SOURCE RESISTANCE = 200 f = 1.0 kHz for overvoltage protection. • Guardring IC = 1.0 mA 10 4.0• Ultra high-speed switching. SOURCE RESISTANCE = 200 • Silicon epitaxial IC = planar 0.5 mA chip, metal silicon junction. 8 Lead-free parts meet environmental standards of • 3.0 MIL-STD-19500 /228 SOURCE RESISTANCE = 2.0 k IC =suffix 50 µA"G" • RoHS product for packing code 2.0 Halogen free product for packing code suffix "H" Mechanical data 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. IC = 1.0 mA 0.071(1.8) 0.056(1.4) IC = 0.5 mA 6 4 IC =50µ A 0.040(1.0) RESISTANCE 2.0 k retardant Epoxy : UL94-V0 rated= flame 1.0• SOURCE IC= 100µ A (PNP) • Case : Molded plastic, SOD-123H 0.024(0.6) IC =100µ A 2 0• Terminals :Plated terminals, solderable per MIL-STD-750 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 Method 2026 f, FREQUENCY (kHz) • Polarity : Indicated by cathode band Figure 25. • Mounting Position : Any • Weight : Approximated 0.011 gram , (PNP) 0.031(0.8) Typ. 0 0.1 0.031(0.8) Typ. 0.4 10 20 40 1.0 2.0 4.0 Rg, SOURCE RESISTANCE (k OHMS) 0.2 100 Dimensions in inches and (millimeters) Figure 26. h PARAMETERS (VCE = ±10 Vdc, f = 1.0 kHz, TA = 25°C) RATINGS VRRM 12 20 Maximum 70 RMS Voltage VRMS 14 Maximum DC Blocking Voltage 50 Maximum Average Forward Rectified Current VDC 20 IO Peak Forward Surge Current 8.3 ms single half sine-wave 30 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IFSM superimposed on rated load (JEDEC method) IC , COLLECTOR CURRENT (mA) Typical Thermal Resistance (Note 2) RΘJA Figure 27. Typical Junction Capacitance (Note 1) Current Gain CJ TJ hie , INPUTIMPEDANCE (k OHMS) Operating 20 Temperature Range TSTG (PNP) 7.0 CHARACTERISTICS 5.0 Maximum Forward Voltage at 1.0A DC 3.0 Average Reverse Current at @T A=25℃ Maximum 2.0 @T A=125℃ Rated DC Blocking Voltage VF IR NOTES:1.0 0.5 2- Thermal Resistance From Junction to Ambient 0.3 0.2 0.1 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 29. Input Impedance 2012-06 2012-0 50 13 20 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 10 40 50 60 80 100 150 200 1.0 5 0.1 0.2 0.3 0.5 0.7 1.030 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 40 Figure 28. Output 120Admittance -55 10 to +125 -55 to +150 - 65 to +175 7.0 (PNP) 7 5.0 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH 0.7 at 1 MHZ and applied reverse voltage of 4.0 VDC. 1- Measured (PNP) 70 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH 30 Marking Code 100 Recurrent Peak Reverse Voltage Maximum Storage Temperature Range 10 hoe , OUTPUTADMITTANCE (µmhos) Ratings at 25℃ ambient temperature unless (PNP) otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 200 hfe , DC CURRENT GAIN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 300 3.0 0.50 2.0 0.70 0.85 0.9 0.5 0.92 10 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 30. Voltage Feedback Ratio WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Produc hFE , DC CURRENTGAIN (NORMALIZED) SOD-123+ PACKAGE TYPICAL ELECTRICAL CHARACTERISTICS Package Features MMBT3946DW1T1 • Batch process design, excellent power dissipation offers (PNP) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. TJ = +125°C • High current capability, low forward voltage drop. +25°C • High surge capability. 1.0 • Guardring for overvoltage protection. 0.7 • Ultra high-speed switching. -55°C 0.5 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Mechanical data VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 0.040(1.0) 0.024(0.6) 0.8 50 30 70 100 200 0.031(0.8) Typ. Figure 31. DC Current Gain • Polarity : Indicated by cathode band • Mounting Position : Any (PNP) 1.0 • Weight : Approximated 0.011 gram IC = 1.0 mA Dimensions in inches and (millimeters) TJ = 25°C 10 mA 30 mA 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single 0.6 phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.4 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.2 Maximum RMS Voltage 0 Maximum 0.01 DC Blocking0.02 Voltage0.03 VRRM VRMS 0.05 0.07 0.1 VDC IO Maximum Average Forward Rectified Current 12 20 13 30 14 40 14 21 28 15 50 0.220 0.3 30 0.5 40 0.7 IB, BASE CURRENT (mA) 16 60 35 42 56 2.0 60 3.0 80 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) RΘJA Typical1.0 Junction Capacitance (Note 1) CJ TJ = 25°C VBE(sat) @ IC/IB= 10 Operating Temperature Range TJ V, VOLTAGE (VOLTS) Storage0.8 Temperature Range VBE@ VCE= 1.0 V CHARACTERISTICS 0.6 Maximum Forward(PNP) Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 0.4 @T A=125℃ Rated DC Blocking Voltage VF IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0 1.0 2.0 50 100 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 33. "ON" Voltages 2012-06 2012-0 0.5 115 150 120 200 105 140 10 150 200 70 5.0 100 7.0 40 120 -55 to +150 θVC FOR VCE(sat) - 65 to+25°C +175TO+125°C 0 FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH -55°C TO+25°C VCE(sat) @ IC/IB = 10 NOTES:0.2 1.0 -55 to +125 TSTG 10 100 1.0 30 IFSM V, TEMPERATURE COEFFICIENTS (mV/°C) Peak Forward Surge Current 8.3 ms single half sine-wave 18 80 1.0 50 32. Collector Saturation Region Figure VCE= 1.0 V 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • Epoxy : UL94-V0 rated flame retardant 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Case : Molded plastic, SOD-123H • 0.1 0.031(0.8) Typ. IC , COLLECTOR , CURRENT (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Recurrent Peak Reverse Voltage 0.146(3.7) 0.130(3.3) 0.3MIL-STD-19500 /228 packing code suffix "G" • RoHS product for(PNP) 0.2Halogen free product for packing code suffix "H" Marking Code SOD-123H 2.0 Method 2026 outline 200 -0.5 0.50 (PNP) 0.70 10 -1.0 0.9 0.92 +25°CTO+125°C -55°C TO+25°C θVB FOR VBE(sat) -1.5 -2.0 0.85 0.5 0 20 40 60 80 100 120 140 160 180 200 IC , COLLECTOR CURRENT (mA) Figure 34. T emperature Coefficients WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3946DW1T1 THRU Transistors Dual Purpose 1.0A General SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-363 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon.071(1.80) • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. .030(0.75) .021(0.55) .071(1.80) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .016(0.40) VRMS .004(0.10) Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 14 20 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 IO IFSM 1.0 30 40 120 -55 to +125 TJ Storage Temperature Range -55 to +150 - 65 to +175 TSTG CHARACTERISTICS 0.5 mm (min) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage 0.50 0.70 0.85 0.9 0.92 0.5 IR 0.65 mm 0.65 mm Maximum Forward Voltage at 1.0A DC NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.4 mm (min) 13 30 RΘJAin inches and (millimeters) Dimensions CJ Operating Temperature Range 12 20 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 10 1.9 mm 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.