WILLAS FM120-M+ MMBT5551DW1T1 THRU MOUNTRECTIFIERS TRANSISTOR DUAL SMALLMOUNT SIGNAL SURFACE 1.0ANPN SURFACE SCHOTTKY BARRIER -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURE optimize board space. ƽ •We declare the material of product compliance with RoHS requirements. Low powerthat loss, high efficiency. 6 package is available High current capability, low forward voltage drop. •Pb-Free High surge capability. •RoHS product for packing code suffix ”G” Guardring for overvoltage protection. •Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • SiliconMARKING DEVICE AND ORDERING INFORMATION • Lead-free parts meet environmental standards of Device MIL-STD-19500 /228 Marking 5 0.146(3.7) 0.130(3.3) 4 0.012(0.3) Typ. 1 2 0.071(1.8) 0.056(1.4) 3 SOT-363/SC-88 Shipping RoHS product for packing code suffix "G" • MMBT5551DW1T1 G1 3000/Tape&Reel Halogen free product for packing code suffix "H" Mechanical MAXIMUM RATINGSdata Collector–Base Voltage V CBO Method 2026 EBO Voltageby cathode V • Emitter–Base Polarity : Indicated band Mounting Position : Any • Collector Current — Continuous IC • Weight : CHARACTERISTICS Approximated 0.011 gram THERMAL Characteristic MAXIMUM 160 Vdc 6.0 Vdc 600 mAdc Derateload, above 25°Ccurrent by 20% For capacitive derate Thermal Resistance, Junction to Ambient RATINGS Total Device Dissipation Marking Code Alumina Substrate, (2) TA = 25°C Maximum Recurrent Peak Reverse Voltage Derate above 25°C Maximum RMS Voltage Thermal Resistance, Junction to Ambient Maximum Junction DC Blocking andVoltage Storage Temperature Maximum Average Forward Rectified Current Characteristic superimposed on rated load (JEDEC method) Dimensions in inches and E (millimeters) C B 2 225 mW 1.8 556 mW/°C °C/W 300 14 40 2.4 21 28 417 30 40 –55 to +150 mW 15 50 mW/°C 35 °C/W 50 °C RθJA Typical Junction CapacitanceBreakdown (Note 1) Voltage(3) Collector–Emitter Operating(ITemperature Range = 1.0 mAdc, I = 0) C B Storage Temperature Range VRRM VRMS VDC IO IFSM D P12 20 13 30 14 RθJA TJ ,20 Tstg Collector–Base Breakdown Voltage CHARACTERISTICS CJ TJ 18 80 10 100 115 150 120 200 Vo 42 56 70 105 140 Vo 60 80 100 150 200 Vo @T A=125℃ IR Collector Cutoff Current ( VatCB = 120Vdc, I E = reverse 0) 1- Measured 1 MHZ and applied voltage of 4.0 VDC. -55 to +125 (BR)CEO 0.50 — ℃ Vdc - 65 to +175 Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 180 (BR)EBO I CBO V I EBO Vdc — 0.70 V ( V CB = 120Vdc, I E = 0, T A=100 °C) 2012-0 160 Am 40 120 2- Thermal Resistance From Junction to Ambient 2012-06 Max Am P -55 to +150 ℃ ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH (BR)CBO Emitter–Base Breakdown Voltage = 10 µAdc, I C = 0) Min 1.0 30 Unit V Maximum Average Reverse Current at @T A=25℃ NOTES: 1 16 60 VF Maximum Forward Voltage at 1.0A DC Rated DC (IBlocking Voltage Symbol TSTG (I C = 100 µAdc, I E = 0) E 2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RΘJA CHARACTERISTICS TypicalOFF Thermal Resistance (Note 2) 0.031(0.8) Typ. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Peak Forward Surge Current 8.3 ms single half sine-wave 0.031(0.8) Typ. 0.040(1.0) E1 0.024(0.6) Symbol CHARACTERISTICS Max Unit RATINGS AND ELECTRICAL Total Device Dissipation FR– 5unless Board,otherwise (1) Ratings at 25℃ ambient temperature specified. PD A = 25°C T Single phase half wave, 60Hz, resistive of inductive load. B1 C2 : UL94-V0 rated flame retardant • EpoxyRating Symbol Value Unit • Case : Molded plastic, SOD-123H 140 Collector–Emitter Voltage V CEO ,Vdc • Terminals :Plated terminals, solderable per MIL-STD-750 0.85 0.9 0.92 0.5 6.0 — Vo 10 Vdc — 50 nAdc — 50 µAdc — 50 mA nAdc WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT5551DW1T1 THRU MOUNTRECTIFIERS TRANSISTOR DUAL NPN SMALLMOUNT SIGNALSCHOTTKY SURFACEBARRIER 1.0A SURFACE -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. (T A = 25°C unless otherwise noted) (Continued) ELECTRICAL CHARACTERISTICS overvoltage protection. • Guardring for Symbol switching. • Ultra high-speedCharacteristic epitaxial planar chip, metal silicon junction. • Silicon ON CHARACTERISTICS • Lead-free DC Currentparts Gain meet environmental standards of h 0.146(3.7) 0.130(3.3) • Epoxy : UL94-V0 rated flame retardant (I C = 50 mAdc, V CE = 5.0Vdc) • Case : Molded plastic, SOD-123H , • Terminals :PlatedSaturation terminals, solderable per MIL-STD-750 Collector–Emitter Voltage — 80 250 30 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) — 0.031(0.8) Typ. Vdc VCE(sat) — • Polarity : Indicated by cathode band (I C = 50 mAdc, I B = 5.0 mAdc ) Position : Any • Mounting • Weight : Approximated 0.011 gram 0.15 Dimensions in inches and (millimeters) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) V — 0.20 — 1.0 — 1.0 Vdc BE(sat) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. (I C = 50 mAdc, I B = 5.0 mAdc) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 80 Unit 0.031(0.8) Typ. Method 2026 (I C = 10 mAdc, I B = 1.0 mAdc) Max –– FE MIL-STD-19500 /228 (I C = 1.0 mAdc, V CE = 5.0 Vdc) product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" (I C = 10 mAdc, V CEdata = 5.0 Vdc) Mechanical Min 0.012(0.3) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT5551DW1T1 THRU MOUNTRECTIFIERS TRANSISTOR DUAL NPN SMALLMOUNT SIGNALSCHOTTKY SURFACEBARRIER 1.0A SURFACE -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features h FE, DC CURRENT GAIN (NORMALIZED) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 500 • Low profile surface mounted application in order to V CE = 1.0 V optimize board space. 300 T J = +125°C 200 power loss, high efficiency. • Low +25°C capability, low forward voltage drop. • High current 100 surge capability. • High for overvoltage protection. • Guardring–55°C 50 • Ultra high-speed switching. 30 epitaxial planar chip, metal silicon junction. • Silicon 20 • Lead-free parts meet environmental standards of V CE = 5.0 V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 10 product for packing code suffix "G" • RoHS 7.0 Halogen free product for packing code suffix "H" 5.0 Mechanical data 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Epoxy : UL94-V0 rated flame retardant I C , COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Figure 15., DC Current Gain • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) I C = 1.0 mA 0.6 10 mA 30 mA 0.2 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0 Maximum Recurrent Peak Reverse Voltage 0.005 0.01 Maximum RMS Voltage 0.02 VRRM 0.05 0.1 VRMS 12 20 13 30 0.2 14 40 0.5 14 15 50 1.0 21 16 60 2.0 28 I 20 CURRENT 40(mA) 50 B , BASE 30 Figure 16. Collector Saturation Region IO IFSM V CE = 30 V 10 I C, COLLECTOR CURRENT (µA) Operating Temperature Range Storage Temperature Range T J = 125°C 10 –1 I C= I 75°C REVERSE 10 –3 Maximum Average Reverse Current at @TFORWARD A=25℃ NOTES: 10 –4 TSTG VF IR @T A=125℃ 25°C 1- Measured at 101 MHZ and applied reverse voltage of 4.0 VDC. –5 –0.4 –0.3 –0.2 –0.1 0 0.1 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 120 200 V 70 105 140 V 80 100 150 200 V 50 A A 40 120 ℃ -55 to +150 - 65 to +175 V BE(sat) @ I C /I B = 10 0.6 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage -55 to +125 0.8 115 150 1.0 30 T J = 25°C TJ CES CHARACTERISTICS 1.0 CJ Typical Junction0 Capacitance (Note 1) 10 –2 RΘJA Typical Thermal Resistance (Note 2) V, VOLTAGE (VOLTS) 10 1 10 100 20 56 60 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) 10 42 VDC Peak Forward Surge Current 8.3 ms single half sine-wave 18 80 5.0 35 Maximum DC Blocking Voltage 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 0.4 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code 0.031(0.8) Typ. Method 2026 1.0 • Polarity : Indicated by cathode band T J = 25°C Position : Any • Mounting 0.8 • Weight : Approximated 0.011 gram 70 100 0.040(1.0) 0.024(0.6) 0.2 0.3 0.4 0.5 0.6 0.50 0.70 0.4 0.9 0.85 0.92 0.5 m 10 0.2 V V CE(sat) @ I C /I B = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages 100 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT5551DW1T1 THRU MOUNTRECTIFIERS TRANSISTOR DUAL NPN SMALLMOUNT SIGNAL SURFACE 1.0A SURFACE SCHOTTKY BARRIER -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers , TEMPERATURE COEFFICIENT (mV/°C) better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to • Low2.5 optimize board space. 2 T J = –55°C to +135°C • Low power loss, high efficiency. 1.5 • High current capability, low forward voltage drop. • High1.0surge capability. θ VC for V CE(sat) 0.5 for overvoltage protection. • Guardring • Ultra 0high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon –0.5 • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 10.2 V V BB V in 100 V out 5.1 k 100 V in t r , t f <10 ns DUTY CYCLE = 1.0% 3.0 k 30 V 0.071(1.8) RC 0.056(1.4) RB INPUT PULSE Mechanical data –2.5 V CC –8.8 V 0.25 mF 10 ms –1.0 MIL-STD-19500 /228 θ VB for V BE(sat) –1.5product for packing code suffix "G" RoHS Halogen –2.0 free product for packing code suffix "H" 0.012(0.3) Typ. 1N914 0.040(1.0) 0.024(0.6) θ V 0.2 0.3 0.5 3.0 5.0 10 20 30 50 100 : UL94-V0 rated 1.0 flame2.0retardant • Epoxy0.1 SOD-123H CURRENT (mA) • Case : Molded plastic, I C , COLLECTOR , Figure 5. Temperature • Terminals :Plated terminals, solderableCoefficients per MIL-STD-750 Values Shown are for I C @ 10 mA 0.031(0.8) Typ. 0.031(0.8) Typ. Figure 6. Switching Time Test Circuit Method 2026 • Polarity : Indicated by cathode band 100 Position : Any • Mounting 70 50 • Weight : Approximated 0.011 gram C, CAPACITANCE (pF) 500 t r @ V CC = 120 V 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 200 t r @ V CC = 30 V Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. 7.0 C ibo For capacitive 5.0 load, derate current by 20% 100 t d @ V EB(off) = 1.0 V 50 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH C obo 30 V CC = 120 V RATINGS 3.0 t, TIME (ns) I C /I B = 10 T J = 25°C T J = 25°C 30 20 Dimensions in inches and (millimeters) 1000 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 20 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 1.0 Voltage Maximum RMS VRMS 14 21 10 28 35 42 56 70 105 140 V 40 50 150 200 V 2.0 0.2 0.3 0.7 0.5 1.0 2.0 Maximum DC Blocking Voltage 3.0 5.0 7.0 VDC 10 20 20 30 0.2 0.3 0.5 VOLTAGE (VOLTS) R , REVERSE Maximum Average ForwardVRectified Current IO superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 5000 Typical Junction Capacitance (Note 1) Operating Temperature Range 3000 2000 Storage Temperature Range 1000 t, TIME (ns) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 500 IFSM NOTES: 5.0 60 RΘJA CJ I C /I B = 10 T J = 25°C t f @ V CC = 120 V -55 to +125 TJ TSTG 10 80 20 30 50 100 100 200 t f @ V CC = 30 V 40 120 A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 2.0 3.0 1.0 CURRENT (mA) I C , COLLECTOR 8. Turn–On Time 30 Figure 7. Capacitances Figure Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 0.50 0.70 0.85 0.9 0.92 0.5 IR 300 t s @ V CC = 120 V @T A=125℃ 200 10 V m 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT5551DW1T1 THRU FM1200-M+ MOUNTRECTIFIERS TRANSISTOR DUAL SMALLMOUNT SIGNAL SURFACE 1.0ANPN SURFACE SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-363 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. .071(1.80) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of optimize board space. 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .030(0.75) .021(0.55) Method 2026 .071(1.80) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .010(0.25) Dimensions in inches and (millimeters) .003(0.08) • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .016(0.40) VRMS .004(0.10) VDC Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 14 21 28 35 42 56 70 105 140 Vo 20 30 40 50 60 80 100 150 200 Vo IO IFSM 1.0 30 Storage Temperature Range 40 120 -55 to +125 TJ Operating Temperature Range Am ℃ P ℃ - 65 to +175 ℃ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL GENERIC CHARACTERISTICS MARKING DIAGRAM*0.50 VF Maximum Average Reverse Current at @T A=25℃ 6 XX M NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1 0.9 0.92 10 XX OR 0.85 0.5 6 IR @T A=125℃ 0.70 Vo mA M Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient Am -55 to +150 TSTG 13 30 (millimeters) RΘJA in inches and Dimensions CJ Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 12 20 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 1 XX = Specific Device Code M = Date Code 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.