WILLAS FM120-M+ THRU MURS160-FN3 FM1200-M+ 1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-323 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Package outline optimize board space. Features • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) • Low• profile surface mounted application order to High current capability, low forward voltageindrop. mFN-323 0.071(1.8) 0.056(1.4) 0.044(1.10) 0.036(0.90) 0.017(0.43) 0.013(0.33) Halogen product for packing Polarity: Colorfree band denotes cathodecode end suffix "H" Mechanical data 0.026(0.66) 0.022(0.56) product for packing code suffix "G" • RoHS Halogen free product for packing code suffix “H” • 0.012(0.3) Typ. 0.056(1.40) 0.048(1.20) • • • optimize space. surge capability. • High board Guardring for overvoltage Package.protection. mini• Flat No-Lead Ultra high-speed switching. • Glass passivated chip junction. Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of RoHSMIL-STD-19500 product for packing /228 code suffix ”G” 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Mechanical data • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Epoxy:UL94-V0 rated flame retardant • Polarity : Indicated by cathode band • Case : mFN-323 • Mounting Position : Any • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. ry 0.031(0.8) Typ. 0.103(2.60) 0.095(2.40) 0.026(0.65) 0.014(0.35) ina Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum ratings Characteristics (AT T FM160-MH =25 C unless otherwise noted) FM1200-MH UNIT FM130-MH FM140-MH FM150-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH RATINGS and Electrical Marking CodePARAMETER Maximum Recurrent Peak Reverse Voltage Forward rectified current Maximum RMS Voltage Maximum DCsurge Blocking Voltage Forward current Maximum Average Forward Rectified Current o A VRRM 12CONDITIONS 13 14 20 30 40 15 50 16 Symbol 18 MIN.10 TYP. 115 MAX. 120UNIT 60 80 100 150 200 Volts VRMS 14 35 42 See Fig.2 21 28 8.3ms single 30 superimposed 40 50 on VDC half20sine-wave rate load (JEDEC methode) 60 IO superimposed on rated load (JEDEC method) Storage temperature Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range I FSM 80 T RΘJA 56 1.0 IR 30 C J Reverse current V R = V RRM T J = 25 OC Peak Forward Surge junction Current 8.3capacitance ms single half sine-wave Typical Diode f=1MHzIFSM and applied 4V DC reverse voltage Typical Thermal Resistance (Note 2) IO 40 STG 120 -55 to +125 1.0 A 70 105 140 100 150 30 200 A 5.0 25 -65 μA Volts Volts Amps pF Amps +175 O C ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOLS NOTES: *1 V RRM (V) @T A=125℃ V RMS*2 (V) *3 VR (V) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. MURS160-FN3 600 420 2- Thermal Resistance From Junction to Ambient 600 0.50 2012-0 0.85 0.9 0.92 Volts *1 Maximun Repetitive peak reverse voltage 0.5 IR *4 VF (V) 10 *2 Maximun RMS voltage mAmps *5 t rr (ns) Operating temperature T J, ( OC) *3 Maximun DC Blocking Voltage 50 -55 to +150 *4 Maximum forward voltage@I F =1.0A,T J =25°C 1.25 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A 2012-06 0.70 *5 Maximum Reverse recovery time, note 1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MURS160-FN3 FM1200-M+ 1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V mFN-323 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Rating and characteristic curves SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) FIG.2-TYPICAL FORWARD CURRENT 0.130(3.3) 0.012(0.3) Typ. DERATING CURVE AVERAGE FORWARD CURRENT,(A) • INSTANTANEOUS FORWARD CURRENT,(A) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. FIG.1-TYPICAL FORWARD • Ultra high-speed switching. CHARACTERISTICS planar chip, metal silicon junction. • Silicon epitaxial 10 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 1 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.1 Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.01 • Case : Molded plastic, SOD-123H , 0.001 :Plated terminals, solderable per MIL-STD-750 • Terminals 1.2 1.4 1.6 • Polarity : Indicated by FORWARD cathode band VOLTAGE,(V) • Mounting Position : Any • Weight : Approximated 0.011 gram 0.8 0.6 0.4 0.2 0.040(1.0) 0.024(0.6) 0 0 25 50 75 100 125 150 0.031(0.8) Typ. 175 AMBIENT TEMPERATURE (°C) ry 1 0.071(1.8) 0.056(1.4) 1.0 0.031(0.8) Typ. 1.8 Dimensions in inches and (millimeters) ina FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 PEAK FORWAARD SURGE CURRENT,(A) 0.2 0.4 2026 0.6 0.8 Method 1.2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 30 8.3ms Single Half TJ=25 C Sine Wave RECOVERY TIME CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 20 50W NONINDUCTIVE Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 (+) 10W NONINDUCTIVE (approx.) Peak Forward Surge Current 1W NON8.3 ms single INDUCTIVE OSCILLISCOPE (NOTE 1) half sine-wave superimposed on rated load (JEDEC method) IFSM 1. Rise Time= 7ns max., Typical ThermalNOTES: Resistance (Note 2) Input Impedance= 1 megohm.22pF. RΘJA 2. Rise Time=(Note 10ns max., Typical Junction Capacitance 1) Source Impedance= 50 ohms.CJ TJ Operating Temperature Range Storage Temperature Range JEDEC method 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 10 30 GENERATOR IO (NOTE 2) Maximum Average ( ) Forward Rectified Current ( ) VDC PULSE 20 Maximum DC Blocking Voltage D.U.T. 25Vdc 0 1 5 (+) 1.0 10 50 Amps 100 NUMBER OF CYCLES AT 60Hz 30 Amps 40 120 FIG.5-TYPICAL JUNCTION CAPACITANCE -55 to +150 ℃/W -55 to +125 PF ℃ - 65 to +175 70 TSTG ℃ Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at Rated DC Blocking Voltage 0 | | | | @T||A=25℃ | @T|A=125℃ 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF IR -0.25A JUNCTION CAPACITANCE,(pF) trr CHARACTERISTICS +0.5A NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 40 Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE For capacitive load, derate current by 20% 2- Thermal Resistance From Junction to Ambient -1.0A 0.50 50 0.70 0.9 0.85 0.92 0.5 40 Volts mAmps 10 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. 1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V mFN-323 PACKAGE MURS160-FN3 Pinning information Pin cathode anode 1 Symbol 2 1 2 ry Pin1 Pin2 Simplified outline Type number ina Marking Marking code M6 Pr eli m MURS160-FN3 Suggested solder pad layout (1.90) 0.075 (0.70) 0.028 (0.50) 0.020 (0.90) 0.036 (0.50) 0.020 Dimensions in inches and (millimeters) 2012-0 WILLAS ELECTRONIC CORP.