WILLAS FM120-M+ THRU SCS520CS-30T5G 100mA Surface Mount Schottky Barrier Rectifiers - 30V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-923 Package SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. z•Applications High current capability, low forward voltage drop. surge capability. • Highcurrent Low rectification • Guardring for overvoltage protection. z•Features Ultra high-speed switching. planar chip, metal silicon • Silicon epitaxialsurface Extremelysmall mounting type. junction. (SOD-923) Lead-free parts meet environmental standards of •Low IR. MIL-STD-19500 /228 High reliability. product for packing code suffix "G" • RoHS Halogen freethat product packing of code suffix "H" We declare thefor material product Mechanical datarequirements. compliance with RoHS Pb-Free package is available • Epoxy : UL94-V0 rated flame retardant RoHS product for packing code suffix ”G” • Case : Molded plastic, SOD-123H Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 10.056(1.4) 2 SOD-923 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 2 Anode 1 Cathode Method 2026 zConstruction • Polarity : Indicated by cathode band Silicon epitaxial planar • Mounting Position : Any Dimensions in inches and (millimeters) Device Marking And Ordering Inf ormation • Weight : Approximated 0.011 gram Device Marking Shipping MAXIMUM RATINGS CHARACTERISTICS 6&6520CS-30T5G E AND ELECTRICAL 8000/Tape&Reel Ratings at 25℃ ambient temperature Maximum Ratings (TA = 25unless °C) otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol Limits Unit For capacitive load, derate current by 20% DC reverse voltage VR 30 V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH RATINGS Mean rectifying current IO 100 FM130-MHmA Marking Code 12500 13 mA 14 15 16 18 10 115 120 Peak forward surge current IFSM 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VTRRM Junction temperature 125 °C j Storage Maximum RMStemperature Voltage TsRMS V tg Maximum DC Blocking Voltage VDC Electrical Characteristics ( TA =25°C) Maximum Average Forward Rectified Current -40~+125 14 21 20 Forward voltage VF Reverse current IR Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) RΘJA CJ Typ - - - - - 42 56 70 105 140 50 60 80 100 150 200 Max. 0.45 0.50 V 0.5 µA 1.0 Conditions I F=10mA 30 Unit V I F=20mA 40 VR=10V 120 -55 to +125 TJ Operating Temperature Range 35 40 30 IO Parameter Symbol Min. Peak Forward Surge Current 8.3 ms single half sine-wave Forward voltage VF IFSM superimposed on rated load (JEDEC method) °C 28 Electricalcharacteristiccurves(Ta=25 C) Storage Temperature Range TSTG O -55 to +150 - 65 to +175 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum0.3 Average Reverse Current at @T A=25℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Rated DC Blocking Voltage0A VR t D=t/T VR=15V DC 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. T Tj=150℃ NOTES: @T Io A=125℃ 0V 0.2 2- Thermal Resistance D=1/2 From Junction to Ambient 0.1 Sin(θ＝180) IR 0.70 0.85 0.9 0.92 0.5 0.3 0A 0V 0.2 DC Io t T 10 VR D=t/T VR=15V Tj=150℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 2012-06 2012-11 0.50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Maximum Forward Voltage at 1.0A DC 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520CS-30T5G 100mA Surface Mount Schottky Barrier Rectifiers - 30V -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOD-923SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H to • Low profile surface mounted application in order O Electricalcharacteristiccurves(Ta=25 C) optimize board space. Ta=-25℃ 0.146(3.7) 0.130(3.3) f=1MHｚ Ta=75℃ Ta=25℃ 1000 • RoHS product for packing code suffix "G" Ta=25℃ 100 0.1 Halogen free product for packing code suffix "H" Mechanical data 0.01 0.012(0.3) Typ. 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) MIL-STD-19500 /228 1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. 1000 1000000 for overvoltage protection. • Guardring high-speed switching. • Ultra Ta=125℃ 100 100000 epitaxial planar chip, metal silicon junction. • SiliconTa=75℃ 10 10000 parts meet environmental standards of • Lead-free Ta=-25℃ 10 : UL94-V0 rated flame retardant 1 • Epoxy 0.001 0 100 200 300 400 500 600 0 10 20 SOD-123H • Case : Molded FORWARDplastic, VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 10 0.040(1.0) 0.024(0.6) 1 30 0 0.031(0.8) Typ. 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 0.031(0.8) Typ. Method 2026 900 700 600 500 RATINGS 1cyc Ifsm 15 Maximum Average Forward Rectified Current 8.3ms VRRM 13 30 14 40 10 VRMS 14 21 28 20 Ifsm 30 40 VDC Peak Forward10Surge Current 8.3 ms single half sine-wave 5 superimposed on rated load (JEDEC AVE:3.90A method) 5 Resistance (Note 2) Typical Thermal Typical Junction Capacitance (Note 1) Operating Temperature Range 0 8.3ms 8.3ms 1cyc RΘJA TJ 10 Rth(j-c) 100 FORWARD POWER DISSIPATION:Pf(W) @T A=125℃ IF=100mA 2- Thermal Resistance From Junction to Ambient time 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 Ifsm 100 150 200 t 1.0 30 5 40 120 1 100 -55 to +150 10 100 - 65 to +175 TIME:t(ms) IFSM-t CHARACTERISTICS 0.50 0.70 0.02 0.9 0.85 0.92 0.5 D=1/2 0.06 Sin(θ＝180) DC 0.02 10 0.015 0.01 D=1/2 DC 0.005 Sin(θ＝180) 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS Ct DISPERSION MAP 0 IR 0.08 Mounted on epoxy board 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.04 2012-11 AVE:15.94pF 15 50 -55 to +125 VF Rth(j-a) Rated DC Blocking Voltage 2012-06 12 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.1 Maximum Average Reverse Current at @T A=25℃ 10 0.001 13 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS CHARACTERISTICS 1ms 10 TSTG Maximum Forward Voltage at 1.0A DC 1000 IM=10mA CJ 1 IFSM DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IO IFSM 0 Storage Temperature Range NOTES: 15 10 12 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Maximum DC Blocking Voltage 16 11 IR DISPERSION MAP 20 Voltage Maximum RMS 17 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF DISPERSION MAP Maximum Recurrent Peak Reverse Voltage Ta=25℃ f=1MHz VR=0V n=10pcs 18 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 14 400 300 Ratings at 25℃ ambient temperature unless otherwise specified. AVE:100.5nA 330 200 Single phase half wave, 60Hz, resistive of inductive100load. AVE:338.8mV For capacitive 0 320 load, derate current by 20% Marking Code CAPACITANCE BETWEEN TERMINALS:Ct(pF) 800 Dimensions in inches and (millimeters) 19 Ta=25℃ VR=10V n=30pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 340 20 1000 REVERSE POWER DISSIPATION:PR (W) • Polarity : Indicated by cathode Ta=25℃ band VF=10mA 360 Position : Any n=30pcs • Mounting • Weight : Approximated 0.011 gram 350 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 370 0 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS520CS-30T5G 100mA Surface Mount Schottky Barrier Rectifiers - 30V -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SOD-923SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .006(0.15) .010(0.25) • Low power loss, high efficiency. • High current capability, low forward voltage drop.SOD -923 • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet . 0environmental 3 0 ( 0 . 7 5 ) standards of MIL-STD-19500 /228 .033(0.85) • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .022(0.55) .026(0.65) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .017(0.43) Dimensions in inches and (millimeters) .003(0.07) .007(0.17) .012(0.30) .013(0.34) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .037(0.95) Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 80 100 150 200 .041(1.05) 30 40 50 60 V Dimensions in20inches and (millimeters) I 1.0 Maximum DC Blocking Voltage DC Maximum Average Forward Rectified Current O superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC @T A=125℃ 1.1 NOTES: 0.50 SOLDERING FOOTPRINT* IR 0.70 0.85 0.9 0.92 0.5 10 0.45 0.0177 0.043 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.50 0.0197 SCALE 10:1 2012-06 2012-11 mm Ǔ ǒinches WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.