WILLAS SE2304

WILLAS
FM120-M
SE2304 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
MOSFETS
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
N-Channeloptimize
30-V(D-S)
boardMOSFET
space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
FEATURE
• Guardring for overvoltage protection.
TrenchFET
Power MOSFET
switching.
• Ultra high-speed
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3. DRAIN
Mechanical data
APPLICATIONS
Epoxy : UL94-V0 rated flame retardant
z
Load•Switch
for Portable Devices
• Case : Molded plastic, SOD-123H
z
DC/DC Converter
,
• Terminals :Plated terminals, solderable per MIL-STD-750
z
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Pb-Free package
is available
Method 2026
RoHS
product
for packing
code
suffix ”G”
• Polarity
: Indicated
by cathode
band
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
: Any
• Mounting
Halogen
free Position
product
for packing code suffix “H”
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING: S4
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
unless otherwise
noted)
Maximum
ratings (Ta=25℃
Maximum Average Forward
Rectified Current
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
Drain-Source
Voltage
Typical Thermal
Resistance (Note 2)
Typical Junction
Capacitance (Note 1)
Gate-Source
Voltage
Operating Temperature Range
Continuous Drain Current
Storage Temperature Range
IFSM
VDS
CJ
VGS
TJ
Pulsed Drain Current
CHARACTERISTICS
Continuous Source-Drain
Diode Current
Maximum Forward Voltage at 1.0A DC
Maximum Power Dissipation
Symbol
RΘJA
TSTG
1.0
Value 30
ID
40
120
30
-55 to +125
IDM
±20
3.3
Unit
V
-55 to +150
- 65 to +175
A
15
SYMBOL FM120-MH
IS FM130-MH FM140-MH FM150-MH
0.9 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
0.70
0.85
0.5
RθJA
357
10
Storage Temperature
TJ
150
Junction
Temperature
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
TSTG
-55 ~+150
IR
Thermal
Resistance
from Junction to
Ambient
@T
A=125℃ (t≤5s)
Rated DC
Blocking Voltage
NOTES:
PD
0.50
0.35
Maximum Average Reverse Current at @T A=25℃
W
0.9
0.92
℃/W
℃
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
SE2304 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
MOSFETS
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
power loss, high (T
efficiency.
• Low
Electrical
characteristics
a=25℃ unless otherwise noted)
• High current capability, low forward voltage drop.
surge capability.
• HighParameter
Symbol
Test condition
• Guardring for overvoltage protection.
Static • Ultra high-speed switching.
epitaxialvoltage
planar chip, metalVsilicon
• Silicon
Drain-source
breakdown
(BR)DSSjunction.
VGS = 0V, ID =250µA
• Lead-free parts meet environmental standards of
Gate-source
threshold voltage
MIL-STD-19500
/228
VGS(th)
0.146(3.7)
0.130(3.3)
Min
Typ
Max
30
VDS =VGS, ID =250µA
V
1.2
2.2
RoHS product for packing code suffix "G"
IGSS
VDS =0V, VGS =±20V
Halogen free product for packing code suffix "H"
IDSS
±100
VGS =10V, ID =3.2A
• Epoxy : UL94-V0 rated flame retardant
RDS(on)
• Case : Molded plastic, SOD-123H
VGS =4.5V, ID =2.8A
,
a terminals, solderable per MIL-STD-750
•
Terminals
:Plated
Forward transconductance
gfs
VDS =4.5V, ID =2.5A
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
Total gate charge
Qg
• Weight : Approximated 0.011 gram
VDS =15V,VGS =10V,ID =3.4A
Gate-source charge
VDS =15V,VGS =4.5V,ID =3.4A
0.031(0.8) Typ.
4.5
6.7
2.1
3.2
nC
0.8
4.4
Ciss
Ω
8.8
235
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VDS =15V,VGS =0V,f =1MHz
Coss
Marking Code
Reverse
capacitance
Maximumtransfer
Recurrent
Peak Reverse Voltage
Crss VRRM
Maximum
RMS Time
Voltage
Turn-on
delay
td(on)VRMS
Maximum DC Blocking Voltage
Rise time
Maximum Average Forward Rectified Current
Turn-off delay time
Fall time
superimposed on rated load (JEDEC method)
Turn-on
delay time
Typical Thermal
Resistance (Note 2)
tr
IO
td(off) IFSM
tf
td(on) RΘJA
Typical
Junction Capacitance (Note 1)
Rise
time
CJ
tr
Operating Temperature Range
Turn-off delay time
td(off)
Storage Temperature Range
12
20
14
20
VDC VDD=15V,
Peak Forward Surge Current 8.3 ms single half sine-wave
TJ
13
30
14
40
15
50
16
60
21
28
35
42
30
40
50
60
RL=5.6Ω, ID ≈2.7A,
VDD=15V,
to +125
RL=5.6Ω, ID-55
≈2.7A,
17
12
50
18
80
10
100
56 20
80
75
pF
115
150
120
200
70
105
140
100
150
200
20
35
10
405
120
12
20
10
15
5
10
- 65 to +175
tf
CHARACTERISTICS
45
1.0
12
30
22
VGEN=4.5V,Rg=1Ω
TSTG VGEN=10V,Rg=1Ω
Fall time
ns
-55 to +150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Drain-source body diode characteristics
VF
Maximum Forward Voltage at 1.0A DC
Continuous
source-drain
Maximum Average
Reverse diode
Currentcurrent
at @T A=25℃ IS
Rateddiode
DC Blocking
Voltage
Pulse
forward
current
Ω
0.65
Single
phase half wave, 60Hz, resistive of inductive
Gate
resistance
Rg load. f =1.0MHz
0.075
0.85
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Output capacitance
0.061
S
Gate-drain
Qgd specified.
Ratings at charge
25℃ ambient temperature unless otherwise
RATINGS
0.060
Dimensions in inches and (millimeters)
Qgs
For capacitive load, derate current by 20%
Input
capacitance
0.049
µA
0.040(1.0)
0.024(0.6)
2.5
Method 2026
Dynamic
nA
1
VDS =30V, VGS =0V
Drain-source on-state resistancea
b
Units
0.071(1.8)
0.056(1.4)
• leakage
Gate-body
Zero gate
voltage drain current
Mechanical
data
0.012(0.3) Typ.
@T A=125℃ISM
IR
0.50
TC=25℃
0.70
0.9
0.85
0.5
1.4
A
10
15
A
1.2
V
0.92
Body
diode voltage
NOTES:
VSD
IS=-2.7A,VGS=0V
0.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Notes :
2- Thermal Resistance From Junction to Ambient
a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
SE2304 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
MOSFETS
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Features
Package outline
Typical Characteristics
• Batch process design, excellent power dissipation offers
5
V =10V,9V,8V,7V,6V,5V
Ta=25℃
optimizeGSboard space.
Pulsed
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability. VGS=4V
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
VGS=3V
Halogen free product for packing code
suffix "H"
3
2
VDS
Method 2026
0
VGS
VGS
Pulsed
Maximum RMS Voltage
VRMS
14
VGS=10V
VDC
Maximum DC Blocking Voltage
30
IO
IFSM
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
0
superimposed
on rated
method)12
0
4 load (JEDEC
8
16
20
RΘJA
DRAIN
CURRENT
ID (A)
Typical Thermal Resistance
(Note
2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
(mΩ)
14
40
15
50
CHARACTERISTICS
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
ID=2.5A
60
80
100
150
200
100
0
1.0
30
0
2
4
6
GATE TO SOURCE 40
VOLTAGE
120
-55 to +125
VGS
8
10
(V)
-55 to +150
- 65 to +175
TSTG
VSD
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
20
13
30200
ON-RESISTANCE
12
20
——
300
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VGS=4.5V
Storage Temperature Range I
S
4
(V)
400
RDS(ON)
(mΩ)
RDS(ON)
3
Ta=25℃
VRRM
ON-RESISTANCE
GATE TO SOURCE VOLTAGE
RDS(ON) ——
Maximum
Recurrent Peak Reverse Voltage
60
0.50
0.85
0.9
0.5
IR
@T A=125℃
0.70
0.92
10
IS
(A)
2
500
RATINGS
Marking Code
0.031(0.8) Typ.
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
90
1
0.031(0.8) Typ.
0
Dimensions in inches and (millimeters)
120
Ratings
at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Pulsed
0.040(1.0)
0.024(0.6)
(V)
Ta=25℃
Ta=25℃
0.071(1.8)
0.056(1.4)
1
• Polarity : Indicated by cathode band
: Any—— I
• Mounting Position
RDS(ON)
D
150 • Weight : Approximated 0.011 gram
10
0.012(0.3) Typ.
(A)
Mechanical data
DRAIN TO SOURCE VOLTAGE
0.146(3.7)
0.130(3.3)
4
GS
Ta=25℃
Pulsed
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H V =2V
0
,
0• Terminals
2
4
6
8
10
12
:Plated
terminals,
solderable
per MIL-STD-750
Pulsed
Transfer Characteristics
SOD-123H
5
ID
DRAIN CURRENT
10
better reverse
leakage
current and thermal resistance.
Output
Characteristics
• Low profile surface mounted application in order to
DRAIN CURRENT
15
ID
(A)
20
SOURCE CURRENT
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.1
2- Thermal Resistance From Junction to Ambient
0.01
1E-3
0
200
400
600
800
2012-06
SOURCE TO DRAIN VOLTAGE V
SD
2012-0
1000
(mV)
1200
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
SE2304 THRU
FM1200-M
SOT-23
Plastic-Encapsulate
MOSFETS
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-23
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
Halogen free product for packing code suffix "H"
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Marking Code
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
13
30
14
40
15
50
16
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
VRRM
12
20
CHARACTERISTICS
80
100
80
100
.003(0.08)
56
70
115
150
120
200
105
140
150
200
40
120
-55 to +125
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
TSTG
.004(0.10)MAX.
.008(0.20)
18
10
1.0
30
@T A=125℃
IR
NOTES:
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
0.70
0.85
0.9
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.92
10
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC
Rev.D COR
WILLAS ELECTRONIC CORP.