WILLAS FM120-M+ SEMF3V3LC THRU Low Capacitance Quad Array for ESD Protection Description FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H General Description surface mounted application in order to Features • Low profile optimize board space. This integrated transient voltage suppressor • Low power loss, high efficiency. device (TVS) is designed requiring current capability,for lowapplications forward voltage drop. • High surge capability. • Highovervoltage transient protection, printers, business • Guardring for overvoltage protection. machines, communication systems, medical • Ultra high-speed switching. equipment, other applications. Its integrated epitaxial planar chip, metal silicon junction. • Siliconand Lead-free parts meet environmental standards of • design provides very effective and reliable MIL-STD-19500 /228 protection for separate using for packing lines code suffix "G" only one • RoHS product Halogen free product for packing code suffixsituations "H" package. These devices are ideal for z Four Separate Unidirectional Configurations for Low Leakage Current < 1 μA @ 3Volts z Power Dissipation: 380mW z Small SOT-353 SMT Package z Low Capacitance z Complies to USB 1.1 Low Speed & Speed : Any Servers • Mounting Position Notebooks, Desktops, • Weight :and Approximated 0.011 gram Cellular Portable Equipment Marking These are Pb-Free Devices Pb-Free package is available 0.031(0.8) Typ. RoHS product for packing code suffix ”G” 0.031(0.8) Typ. Halogen free product for packing code suffix “H” Moisture Sensitivity Level 1 and (millimeters) Dimensions in inches Complies with the following standards IEC61000-4-2 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive Marking of inductivecode load. Type number For capacitive load, derate current by 20% SEMF3V3LC VB RATINGS 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage diagram 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0 30 RΘJA Typical Thermal Resistance (Note 2) SOT-353 Maximum Ratings (TA=25°C) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Symbol Maximum Average Reverse Current at @T A=25℃ TJ -55 to +125 VF Parameter Steady State Power-1 Diode 0.50 @T A=125℃ Thermal Resistance, Junction-to-Ambient Above 25℃, Derate 2- Thermal Resistance From Junction to Ambient TJmax Maximum Junction Temperature TJ Tstg Operation Junction and Storage Temperature Range TL 2012-0 2012-06 -55 to +150 - 65 to +175 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. RθJA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH PD NOTES: TSTG IR Peak Power Dissipation(8×20μs@T A=25℃) 40 120 PPK Rated DC Blocking Voltage 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS AND ELECTRICAL Level CHARACTERISTICS 4 15 kV (air discharge) Marking Code Functional 0.071(1.8) 0.056(1.4) Specifications where board space is at a premium. z • Epoxy : UL94-V0 rated flame retardant z • Case : Molded plastic, SOD-123H , Applications • Terminals :Plated terminals, solderable per MIL-STD-750 z Serial and Parallel Ports Method 2026 z z Microprocessor Based Equipment • Polarity : Indicated by cathode band z 0.012(0.3) Typ. z Mechanical data z 0.146(3.7) 0.130(3.3) Protection Lead Solder Temperature(10 seconds duration) 0.70 0.5 10 Value0.85 Units0.9 0.92 30 W 380 mW 327 ℃/W 3.05 Mw/℃ 150 ℃ -55 to +150 ℃ 260 ℃ m WILLAS ELECTRONIC CORP. CORP WILLAS ELECTRONIC WILLAS FM120-M+ SEMF3V3LC THRU Low Capacitance Quad Array for ESD Protection Description FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Electrical Parameter design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Symbol Parameter voltage drop. • High current capability, low forward surge capability. • High IPP Maximum Reverse Peak Pulse Current • Guardring for overvoltage protection. VC high-speed Clamping Voltage @ IPP switching. • Ultra epitaxial planar chip,Reverse metal silicon junction. •VSilicon Working Peak Voltage RWM • Lead-free parts meet environmental standards of Maximum MIL-STD-19500 /228 Reverse Leakage Current @ IR VRWM for packing code suffix "G" • RoHS product Halogen free product for packing code suffix "H" IT Test Current 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data VBR Breakdown Voltage @ IT • Epoxy : UL94-V0 rated flame retardant IF : Molded Forward Current plastic, SOD-123H • Case , VF Forward Voltagesolderable @ IF • Terminals :Plated terminals, per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Dimensions in inches and (millimeters) Electrical Position : Any • MountingCharacteristics Part• Numbers Weight : Approximated 0.011 VBR gram VF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IT VRWM IR Min. Typ. Max. Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% V SEMF3V3LC RATINGS 5.3 Marking Code V 5.6 V mA V µA 1 1. Non-repetitive current per Figure Maximum Recurrent Peak Reverse Voltage 1. Maximum RMS Voltage 2. Only 1 diode 14power21 VRMS under diodes 28 40 VRRM 12 20 3.3 14 40 VDC =25℃20 3. Capacitance of one diode at f=1MHz,T A Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Typical Characteristics superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range V 30 1.0 0v mA 1.25 15 50 16 60 18 80 35 42 56 50 60 80 IO IFSM RΘJA Typical Thermal Resistance (Note 2) Max. bias 13 30 Typ. IF pF SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 5.88 under power. For 4 C 200 10 100 28 115 150 120 200 V 70 105 140 V 100 150 200 V 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Figure 1 Pulse Width 2012-0 2012-06 Figure 2 Power Derating Curve WILLAS ELECTRONIC CORP. CORP WILLAS ELECTRONIC WILLAS FM120-M+ SEMF3V3LC THRU Low Capacitance Quad Array for ESD Protection Description FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Figure 3 Reverse Leakage versus temperature Figure 4 Capacitance • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM Maximum Recurrent Peak Reverse Voltage Figure 5 8*20 Pulse Waveform VRMS Maximum RMS Voltage Maximum DC Blocking Voltage SOT-353 Mechanical Data VDC Maximum Average Forward Rectified Current IO IFSM .071(1.80) Peak Forward Surge Current 8.3 ms single half sine-wave .086(2.20) superimposed on rated load (JEDEC method) . 0 5 TYP.(1.30 TYP.) 12 20 13 30 14 40 14 21 28 20 30 40 .031(0.80) RΘJA Typical Thermal Resistance (Note 2) .039(1.00) CJ Typical Junction Capacitance (Note 1) Storage Temperature Range 16 60 18 80 10 100 115 150 120 200 70 105 140 50 60 80 100 150 200 Figure Voltage 35 6 Forward 42 56 1.0 30 40 120 -55 to +125 TJ Operating Temperature Range 15 50 . 00 4( 0. 10 ) . 01 8( 0. 46 ) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% -55 to +150 - 65 to +175 TSTG CHARACTERISTICS NOTES: 0.85 0.5 10 0.9 0.92 .006(0.15) .014(0.35) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.70 .031(0.80) .043(1.10) @T A=125℃ Rated DC Blocking Voltage IR 0.50 .0 96 (2 .4 5) VF Maximum Average Reverse Current at @T A=25℃ .031(0.80) .039(1.00) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC .07 1 (1. 8 0) .05 3 (1. 3 5) .04 5 (1. 1 5) 2- Thermal Resistance From Junction to Ambient 0.50BSC .020BSC .004(0.08) .007(0.18) Dimensions in inches and (millimeters) 2012-0 2012-06 WILLAS ELECTRONIC CORP. CORP WILLAS ELECTRONIC SEMF3V3LC Protection Description Low Capacitance Quad Array for ESD Ordering Information: Device PN SEMF3V3LC ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.