WILLAS FM120-M+ SESDBV5V0WB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. DESCRIPTION • High current capability, low forward voltage drop. The SESDBV5V0WB is designed to protect voltage sensitive • High surge capability. Guardring for overvoltage • components from ESD. Excellent protection. clamping capability, low leakage, • Ultra high-speed switching. and fast response time provide best in class protection on designs that planar chip, metal silicon junction. • Silicon epitaxial are exposed to ESD.parts Because of its small standards size, it isofsuited for use in meet environmental • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. WBFBP-02C 0.071(1.8) 0.056(1.4) (1.0*0.6*0.5) unit:mm MIL-STD-19500 /228 cellular phones, MP3 players, cameras and many other portable for packingdigital code suffix "G" • RoHS product product for packing suffix "H" applicationsHalogen wherefree board space is at code a premium. Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H FEATURES , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Reverse Working (Stand-Off) Voltage: 5.0 V Method 2026 Low Leakage Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Response Time is Typically < 1 ns • Mounting Position : Any ESD •Rating Class 3 (> 0.011 10 kV) Per Human Body Model Weight of : Approximated gram IEC61000−4−2 Level 4 ESD Protection MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pb-Free package is available Ratings at 25℃ ambient temperature unless otherwise specified. RoHS product for packing code suffix ”G” Single phase half wave, 60Hz, resistive of inductive load. z z z z z z capacitive load,product derate current by 20% code suffix “H” Halogen free for packing For RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V VDC 20 30 40 50 60 80 100 150 200 V Maximum Ratings DC Blocking@Ta=25℃ Voltage Maximum IO IFSM Maximum Average Forward Rectified Current Parameter Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IEC61000−4−2(ESD) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) ESD Voltage Operating Temperature Range Storage Temperature Range CJ 1.0 Limit 30 Symbol ±5 Air Contact 40 ±5 120 -55 Model to +125 PerTJHuman Body TSTG Per Machine Model 10 Unit kV ℃ -55 kV to +150 - 65 to +175 400 V 100 mW Total Power Dissipation on FR-5 Board (Note 1) PD FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Maximum Forward Voltage at 1.0A DC Thermal Resistance Junction−to−Ambient VF Maximum Average Reverse Current at @T A=25℃ 0.50 IR @T A=125℃ Rated DC Blocking Voltage Lead Solder Temperature − Maximum (10 Second Duration) NOTES: Junction and Storage Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.70 RΘJA TL Tj, Tstg 1250 0.5 10260 -55 ~ +150 0.85 ℃/W 0.9 U 0.92 ℃ m ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. 2- Thermal Resistance From Junction to Ambient Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2012-06 2012-09 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESDBV5V0WB THRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. ELECTRICAL CHARACTERISTICS (Tavoltage = 25°Cdrop. unless otherwise noted) capability, low forward • High current • High surge capability. • Guardring for overvoltage protection. Symbol Parameter • Ultra high-speed switching. epitaxial planar chip,Peak metalPulse silicon junction. IPP • Silicon Maximum Reverse Current • Lead-free parts meet environmental standards of VC 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Clamping/228 Voltage @ IPP MIL-STD-19500 for packing code suffix "G" • RoHS product VRWM Working Peak Reverse Voltage Halogen free product for packing code suffix "H" IR Maximum data Reverse Leakage Current @ VRWM Mechanical 0.040(1.0) 0.024(0.6) VBR• Epoxy :Breakdown Voltage IT UL94-V0 rated flame@ retardant IT • Case : Molded Test Current plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. , 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. VRWM IR(μA) VBR(V)@IT Single phase half wave, 60Hz,Device resistive of inductive load. (V) (Note2) Device* @VRWM For capacitive load, derate current by 20% Marking RATINGS SESDBV5V0WB Marking Code Max HB 5 Maximum Recurrentavailable Peak Reverse Voltage *Other voltages upon request. 2. VBR isRMS measured Maximum Voltage with Max Min Max 1 5.6 12 20 138 30 IT (mA) C(pF)@ VC (V) @IPP=5A - VR=0V,f=1MHz - Typ VRRM 141 40 1510 50 16 60 a pulse test current IT atVRMS an ambient of 14 temperature 21 2825℃. 35 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range Max SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 20 30 40 50 2 - 18 80 10 100 115 150 120 200 V 42 56 70 105 140 V 60 80 100 150 200 V 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.