RoHS 2SB1308 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter R T C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current E Collector-emitter saturation voltage J E Transition frequency O O 3 C Test conditions MIN MAX UNIT Ic=-50µA , IE=0 -30 V V(BR)CEO IC= -1mA , IB=0 -20 V V(BR)EBO IE=-50µA, IC=0 -6 V ICBO VCB=-20 V , IE=0 -0.5 µA IEBO VEB=-5 V , -0.5 µA V(BR)CBO Collector-emitter breakdown voltage N 2 unless otherwise specified) Symbol Collector-base breakdown voltage DC current gain D T ,. L SOT-89 TRANSISTOR (PNP) IC=0 hFE * VCE=-2V, IC= -0.5A VCEsat * IC=-1.5A, IB= -0.15A fT VCE= -6V, IC=-50mA f =30MHz 82 390 -0.45 50 MHz * Measured using pulse current. CLASSIFICATION OF hFE Rank W Range Marking P Q R 82-180 120-270 180-390 BFP,BFQ,BFR WEJ ELECTRONIC CO. Http:// www.wej.cn V E-mail:[email protected]