RoHS 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR D T ,. L PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Vcbo 50 V Collector-Emitter Voltage Vceo 45 V Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-150 R T Characteristic O Collector-Base Breakdown Voltage Collector-Emitter Breakdown C E L Voltage# Emitter-Base Breakdown Voltage Collector-Base Cutoff Current 2.9 1.9 0.95 0.95 Collector-Base Voltage ELECTRICAL CHARACTERISTICS at Ta=25 IC N Typ Max Unit C O U nit:m m Symbol Min BVcbo 50 V Ic=100uA Ie=0 BVceo 45 V Ic= 1mA BVebo 5 V Ie= 100uA Ic=0 Test Conditions Ib=0 Icbo 50 nA Vcb= 50V Ie=0 Emitter-Base Cutoff Current Iebo 50 nA Veb= 5V Ic= 0 DC Current Gain Hfe E 60 300 1000 Vce= 5V Ic= 1mA Collector-Emitter Saturation Voltage Vce(sat) 0.3 V Ic= 100mA Ib= 5mA Base-Emitter Saturation Voltage Vbe(sat) 1.00 V Ic= 100mA Ib= 5mA 0.63 o.7 V Vce= 5V Ic= 2mA 2.2 3.5 PF J E Base-Emitter on Voltage Vbe(on) Output Capacitance Cob Current Gain-Bandwidth Product Noise Figure W 2.4 1.3 Unit 1.BASE 2.EMITTER 3.COLLECTOR 0.4 1. fT 0.58 150 270 NF MHz 10 dB Vcb= 10V Ie=0 f=1MHz Vce= 5V Ic= 10mA Vce= 5V Ic= 0.2mA f=1KHz Rs=2Kohm * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SC2786=L6,F1X WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]