RoHS KSA539 KSA539 TRANSISTOR (PNP) D T ,. L TO-92 FEATURES Power dissipation PCM: 0.4 1. EMITTER W (Tamb=25℃) 2. BASE Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range 3. COLLECTOR C 1 2 3 IC TJ, Tstg: -55℃ to +150℃ O Collector-base breakdown voltage V(BR)CBO N MIN Ic=- 100µA , IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic= -10 mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Emitter cut-off current DC current gain IEBO hFE E Collector-emitter saturation voltage J E ICBO Base-emitter saturation voltage O Test R T C E L Collector cut-off current unless otherwise specified) conditions TYP MAX UNIT VCB= -45V, IE=0 -0.1 µA VEB= -3V, IC=0 -0.1 µA VCE= -1V, IC= -50mA 40 240 VCE(sat) IC=-150mA, IB=-15 mA -0.5 V VBE(sat) IC=-150mA, IB=-15 mA -1.2 V CLASSIFICATION OF hFE Rank W Range WEJ ELECTRONIC CO. R O Y 40-80 70-140 120-240 Http:// www.wej.cn E-mail:[email protected]