RoHS MBR20150CT MBR20150CT SCHOTTKY BARRIER RECTIFIER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Characteristic A IFSM 150 A IRRM 1 A VFM 0.9 V IRM 0.1 mA Tj, TSTG -65 to +150 ℃ R T C E L rated load (JEDEC Method) Repetitive Peak Reverse Surge Current @ t≤ 2.0µs Forward Voltage Drop E @ IF=10A, TC=25℃ Peak Reverse Current at Rated DC Blocking Voltage J E @ TC= 25℃ Operating and Storage Temperature Range N 20 VR 8.3ms Single half sine-wave superimposed on IC C V Working Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current O 123 150 VRRM @ TC=125℃ 3. ANODE Unit VRWM (Note 1) 2. CATHODE Value Peak Repetitive Reverse Voltage Average Rectified Output Current 1. ANODE unless otherwise specified) Symbol DC Blocking Voltage D T ,. L TO-220 FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications IO O Notes: 1. Thermal resistance junction to case mounted heat sink. W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]