NSC MM74C89

MM54C89/MM74C89 64-Bit TRI-STATEÉ
Random Access Read/Write Memory
General Description
The MM54C89/MM74C89 is a 16-word by 4-bit random access read/write memory. Inputs to the memory consist of
four address lines, four data input lines, a write enable line
and a memory enable line. The four binary address inputs
are decoded internally to select each of the 16 possible
word locations. An internal address register latches the address information on the positive to negative transition of
the memory enable input. The four TRI-STATE data output
lines working in conjunction with the memory enable input
provide for easy memory expansion.
Address Operation: Address inputs must be stable tSA prior to the positive to negative transition of memory enable. It
is thus not necessary to hold address information stable for
more than tHA after the memory is enabled (positive to negative transition of memory enable).
Note: The timing is different than the DM7489 in that a positive to negative
transition of the memory enable must occur for the memory to be
selected.
Read Operation: The complement of the information which
was written into the memory is non-destructively read out at
the four outputs. This is accomplished by selecting the desired address and bringing memory enable low and write
enable high.
When the device is writing or disabled the output assumes a
TRI-STATE (Hi-z) condition.
Features
Y
Y
Y
Y
Y
Y
Y
Wide supply voltage range
3.0V to 15V
Guaranteed noise margin
1.0V
High noise immunity
0.45 VCC (typ.)
Low power
fan out of 2
TTL compatibility
driving 74L
Low power consumption
100 nW/package (typ.)
Fast access time
130 ns (typ.) at VCC e 10V
TRI-STATE output
Write Operation: Information present at the data inputs is
written into the memory at the selected address by bringing
write enable and memory enable low.
Logic and Connection Diagrams
Dual-In-Line Package
Top View
TL/F/5888 – 2
Order Number MM54C89
or MM74C89
TL/F/5888 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/F/5888
RRD-B30M105/Printed in U. S. A.
MM54C89/MM74C89 64-Bit TRI-STATE Random Access Read/Write Memory
March 1988
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Voltage at any Pin
Power Dissipation (PD)
Dual-In-Line
Small Outline
Operating VCC Range
b 0.3V to VCC a 0.3V
Operating Temperature Range
MM54C89
MM74C89
b 55§ C to a 125§ C
b 40§ C to a 85§ C
Storage Temperature Range (TS)
b 65§ C to a 150§ C
700 mW
500 mW
3.0V to 15V
18V
Absolute Maximum VCC
Lead Temperature (TL)
(Soldering, 10 seconds)
260§ C
DC Electrical Characteristics Min/Max limits apply across temperature range, unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CMOS TO CMOS
VIN(1)
Logical ‘‘1’’ Input Voltage
VCC e 5.0V
VCC e 10V
VIN(0)
Logical ‘‘0’’ Input Voltage
VCC e 5.0V
VCC e 10V
VOUT(1)
Logical ‘‘1’’ Output Voltage
VCC e 5.0V, IO e b10 mA
VCC e 10V, IO e b10 mA
VOUT(0)
Logical ‘‘0’’ Output Voltage
VCC e 5.0V, IO e a 10 mA
VCC e 10V, IO e a 10 mA
IIN(1)
Logical ‘‘1’’ Input Current
IIN(0)
Logical ‘‘0’’ Input Current
VCC e 15V, VIN e 15V
VCC e 15V, VIN e 0V
IOZ
Output Current in High
Impedance State
VCC e 15V, V e 15V
VCC e 15V, VO e 0V
Supply Current
VCC e 15V
ICC
3.5
8.0
V
V
1.5
2.0
V
V
4.5
9.0
V
V
b 0.005
0.5
1.0
V
V
1.0
mA
b 1.0
b 0.005
1.0
b 1.0
0.005
b 0.005
mA
mA
0.05
300
mA
mA
CMOS/LPTTL INTERFACE
VIN(1)
Logical ‘‘1’’ Input Voltage
54C, VCC e 4.5V
74C, VCC e 4.75V
VCC b 1.5
VCC b 1.5
V
V
VIN(0)
Logical ‘‘0’’ Input Voltage
54C, VCC e 4.5V
74C, VCC e 4.75V
VOUT(1)
Logical ‘‘1’’ Output Voltage
54C, VCC e 4.5V, IO e b360 mA
74C, VCC e 4.75V, IO e b360 mA
VOUT(0)
Logical ‘‘0’’ Output Voltage
ISOURCE
Output Source Current
(P-Channel)
VCC e 5.0V, VOUT e 0V
TA e 25§ C
b 1.75
b 3.3
mA
ISOURCE
Output Source Current
(P-Channel)
VCC e 10V, VOUT e 0V
TA e 25§ C
b 8.0
b 15
mA
ISINK
Output Sink Current
(N-Channel)
VCC e 5.0V, VOUT e VCC
TA e 25§ C
1.75
3.6
mA
ISINK
Output Sink Current
(N-Channel)
VCC e 10V, VOUT e VCC
TA e 25§ C
8.0
16
mA
0.8
0.8
V
V
2.4
2.4
V
V
54C, VCC e 4.5V, IO e a 360 mA
74C, VCC e 4.75V, IO e a 360 mA
OUTPUT DRIVE (See 54C/74C Family Characteristics Data Sheet) (Short Circuit Current)
0.4
0.4
V
V
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Range’’ they are not
meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
AC Electrical Characteristics* TA e 25§ C, CL e 50 pF, unless otherwise noted
tpd
Symbol
Propagation Delay from
Memory Enable
Parameter
Conditions
VCC e 5V
VCC e 10V
tACC
Access Time from
Address Input
VCC e 5V
VCC e 10V
tSA
Address Setup Time
VCC e 5V
VCC e 10V
150
60
ns
ns
tHA
Address Hold Time
VCC e 5V
VCC e 10V
60
40
ns
ns
tME
Memory Enable Pulse Width
VCC e 5V
VCC e 10V
400
150
2
Min
Typ
Max
Units
270
100
500
220
ns
ns
350
130
650
280
ns
ns
250
90
ns
ns
AC Electrical Characteristics*
Symbol
Parameter
TA e 25§ C, CL e 50 pF, unless otherwise noted (Continued)
tSR
Write Enable Setup
Time for a Read
Conditions
VCC e 5V
VCC e 10V
Min
Typ
Max
tWS
Write Enable Setup
Time for a Write
VCC e 5V
VCC e 10V
tWE
Write Enable Pulse Width
300
100
tHD
Data Input Hold Time
VCC e 5V, tWS e 0
VCC e 10V, tWS e 0
VCC e 5V
VCC e 10V
50
25
ns
ns
tSD
Data Input Setup
VCC e 5V
VCC e 10V
50
25
ns
ns
t1H, t0H
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Memory Enable
VCC e 5V, CL e 5 pF, RL e 10k
VCC e 10V, CL e 5 pF, RL e 10k
b 85
300
120
ns
ns
t1H, t0H
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Write Enable
VCC e 50V, CL e 5 pF, RL e 10k
VCC e 10V, CL e 5 pF, RL e 10k
180
85
300
120
ns
ns
CIN
Input Capacity
Any Input (Note 2)
COUT
Output Capacity
Any Output (Note 2)
6.5
pF
CPD
Power Dissipation Capacity
(Note 3)
230
pF
0
0
Units
ns
ns
tME
tME
160
60
180
ns
ns
ns
ns
5
pF
*AC Parameters are guaranteed by DC correlated testing.
Note 2: Capacitance is guaranteed by periodic testing.
Note 3: CPD determines the no load AC power consumption of any CMOS device. For complete explanation see 54C/74C Family Characteristics application note,
AN-90.
AC Electrical Characteristics* Guaranteed across the specified temperature range, CL e 50 pF
Parameter
Conditions
MM54C89
TA e b55§ C to a 125§ C
Min
Max
MM74C89
TA e b40§ C to a 85§ C
Min
Units
Max
tPD
VCC e 5V
VCC e 10V
VCC e 15V
700
310
250
600
265
210
ns
ns
ns
tACC
VCC e 5V
VCC e 10V
VCC e 15V
910
400
320
780
345
270
ns
ns
ns
tSA
VCC e 5V
VCC e 10V
VCC e 15V
210
90
70
180
80
60
ns
ns
ns
tHA
VCC e 5V
VCC e 10V
VCC e 15V
80
55
45
70
50
40
ns
ns
ns
tME
VCC e 5V
VCC e 10V
VCC e 15V
560
210
170
480
180
150
ns
ns
ns
tWE
VCC e 5V
VCC e 10V
VCC e 15V
420
140
110
360
120
100
ns
ns
ns
tHD
VCC e 5V
VCC e 10V
VCC e 15V
70
35
30
60
30
25
ns
ns
ns
*AC Parameters are guaranteed by DC correlated testing.
3
AC Electrical Characteristics*
Guaranteed across the specified temperature range, CL e 50 pF (Continued)
Parameter
MM54C89
TA e b55§ C to a 125§ C
Conditions
Min
tSD
VCC e 5V
VCC e 10V
VCC e 15V
t1H, t0H
VCC e 5V
VCC e 10V, CL e 5 pF
VCC e 15V, RL e 10 kX
Max
70
35
30
MM74C89
TA e b40§ C to a 85§ C
Min
Units
Max
60
30
25
ns
ns
ns
420
170
135
360
145
115
ns
ns
ns
*AC Parameters are guaranteed by DC correlated testing.
Truth Table
ME
WE
Operation
Condition of Outputs
L
L
H
H
L
H
L
H
Write
Read
Inhibit, Storage
Inhibit, Storage
TRI-STATE
Complement of Selected Word
TRI-STATE
TRI-STATE
AC Test Circuits
t0H
t1H
TL/F/5888 – 3
TL/F/5888 – 4
Switching Time Waveforms
t0H
t1H
TL/F/5888 – 6
TL/F/5888 – 5
Read Cycle
Write Cycle
TL/F/5888 – 8
TL/F/5888 – 7
4
Switching Time Waveforms (Continued)
Read Modify Write Cycle
TL/F/5888 – 9
Note: tr e 60 ns
tf e 10 ns
5
MM54C89/MM74C89 64-Bit TRI-STATE Random Access Read/Write Memory
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number MM54C89J or MM74C89J
NS Package Number J16A
Molded Dual-In-Line Package (N)
Order Number MM54C89N or MM74C89N
NS Package Number N16E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Europe
Fax: (a49) 0-180-530 85 86
Email: cnjwge @ tevm2.nsc.com
Deutsch Tel: (a49) 0-180-530 85 85
English Tel: (a49) 0-180-532 78 32
Fran3ais Tel: (a49) 0-180-532 93 58
Italiano Tel: (a49) 0-180-534 16 80
National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-043-299-2309
Fax: 81-043-299-2408
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.