RoHS MMBD4448W MMBD4448W D T ,. L SOT-323 SWITCHING DIODE FEATURES 1. 25¡ À0. 05 200 mW (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ R T C E L Parameter Symbol E Reverse breakdown voltage J E Reverse voltage Forward W Diode leakage current voltage capacitance Reverse recovery time V(BR) R IR VF CD t rr C 1. 30¡ À0. 03 Collector current IO: 250 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ O 2. 30¡ À0. 05 O IC 2. 00¡ À0. 05 PD: 0. 30 1. 01 REF Power dissipation Unit: mm N Marking: KA3 unless otherwise specified) Test conditions IR= 10µA MIN MAX 75 UNIT V VR=20V 0.025 VR=75V 2.5 µA IF=5mA 0.72 IF=10mA 0.855 IF=100mA 1 IF=150mA 1.25 VR=0V, f=1MHz 4 pF 4 nS IF=IR=10mA Irr=0.1×IR ,RL=100Ω V Test period <3000µs. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]