RoHS MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA Collector-Emiller Voltage:V CE =-45V 2 1. 0.95 2.9 1.9 0.95 Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO R T V EBO Emitter-Base Voltage Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Electrical Characteristics Parameter IC N ABSOLUTE MAXIMUM RATINGS O T stg Symbol C 0.4 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 Storage Temperature D T ,. L O 3 Unit:mm o (Ta=25 C) Rating Unit -50 V -45 V -5 V -100 mA 225 mW 150 O -55~150 O C C o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CBO -50 V I C =-100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO -45 V I C =-1mA I B =0 Emitter-Base Breakdown Voltage BV EBO -5 V I E =-100 A I C =0 Collector -Base Cutoff Current I CBO -50 nA V CB =-50V, V C =0 Emitter-Base Cutoff Current I EBO -50 nA V CB =-5V, I C =0 DC Current Gain H FE 600 Collector-Emitter Saturation Voltage V CE(sat) -0.20 -0.7 V I C =-100mA, I B =-5mA Base-Emitter Saturation Voltage V BE(sat) -0.82 -1.0 I C =-100mA, I B =-5mA Base-Emitter on Voltage V BE(on) -0.6 -0.67 -0.75 V V Output Capacitance C ob PF V CB =-10V, I E =0 f=1MHz Current Gain-Bandwidth Product fT Noise Figure NF Collector-Base Breakdown Voltage J E E W 60 200 4.5 V CE =-5V, I C =1mA 7 MHz V CE =-5V I C =-10mA 100 190 0.7 V C e =-5V, I C =-2mA dB 10 V CE =-5V I C =-0.2mA f=1MHz Rs=1Kohm o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: MMBT9015LT1=M6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT9015LT1 Typical Characteristics -1000 h FE ,DC CURRENT GAIN I B =-400 A I B =-350 A I B =-300 A -40 I B =-250 A -30 I B =-200 A I B =-150 A -20 I B =-100 A -10 -0 I B =-50 A -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 N VBE(sat),VCE(sat)[mV],SATURATION VOLTAGE Static Characteristic R T -1000 V BE (sat) C E L -100 V CE (sat) -10 -0.1 E -1 J E I C =20 I B -10 IC -10 -0.1 V CE (V),COLLECTOR-EMMITTER VOLTAGE -100 I C (mA),COLLECTOR CURRENT Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage O D T ,. L O Vc E =-5V -100 -20 fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT I C (mA),COLLECTOR CURRENT -50 -1 C -10 -100 -1000 I C (mA),COLLECTOR CURRENT DC Current Gain 1000 Vc E =-6V 100 10 -1 -10 I C (mA),COLLECTOR CURRENT Current Gain Bandwidth Product W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]