RoHS MMST5401 D T ,. L SOT-323 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES Power dissipation 1. 25¡ À0. 05 0.2 W (Tamb=25℃) O 2. 30¡ À0. 05 IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Test R T C E L N Unit: mm unless otherwise specified) Symbol Collector-base breakdown voltage C 1. 30¡ À0. 03 Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range 2. 00¡ À0. 05 PCM: 1. 01 REF 3. COLLECTOR 0. 30 MMST5401 conditions MIN TYP MAX UNIT Ic=-100µA, IE=0 -160 V Ic=-1mA, IB=0 -150 V IE=-10µA, IC=0 -5 V ICBO VCB=-120V, IE=0 -50 nA IEBO VEB=-3V, IC=0 -50 nA hFE(1) VCE=-5V, IC=-1mA 50 hFE(2) VCE=-5V, IC=-10mA 60 hFE(3) VCE=-5V, IC=-50mA 50 VCE(sat) IC=-10mA, IB=-1mA -0.2 V VCE(sat) IC=-50mA, IB=-5mA -0.5 V VBE(sat) IC=-10mA, IB=-1mA -1 V VBE(sat) IC=-50mA, IB=-5mA -1 V fT VCE=-10V, IC=-10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 6 pF Noise figure NF 8 dB Collector cut-off current Emitter cut-off current DC current gain E 240 Collector-emitter saturation voltage J E Base-emitter voltage W Transition frequency Marking VCE=-5V, Ic=-0.2mA, f=1KHZ, Rg=10Ω 100 K4M WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]