SBP3306 High Voltage Fast-Switching NPN Power Transistor Features ■ ■ ■ Very high switching speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCBO Collect-Emitter Voltage VBE=0 950 V VCEO Collector-Emitter Voltage IB=0 400 V VEBO Emitter-Base Voltage IC=0 12 V IC Collector Current 4 A ICP Collector pulse Current 8 A PC Total Dissipation at Tc=25℃ 70 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature -65~150 ℃ Value Units (Note) Thermal Characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case 1.8 ℃/W RӨJA Thermal Resistance Junction to Ambient 62.5 ℃/W Rev.A02 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 6 SBP330 BP3306 Electrical Characteristics (T =25℃ unless otherwise noted) C Symbol Parameter Test conditions Value Min Typ Max Units ICBO Collector Cut-off Current VCB=950V, Ie=0A - - 10 µA ICEO Collector Cut-off Current VCE=400V, IB=0A - - 10 µA BVCBO Collector-Base Breakdown Voltage Ic=0.5mA 950 - - V BVCEO Collector-Emitter Breakdown Voltage Ic=5mA 400 - - V BVEBO Emitter-Base Breakdown Voltage Ie=1mA 12 - - V VCE(sat)1 Collector -Emitter Saturation Voltage Ic=1A,Ib=0.2A - - 0.5 V VCE(sat)2 Collector -Emitter Saturation Voltage Ic=3.5A,Ib=1A - - 1.5 V VBE(sat)1 Base -Emitter saturation Voltage Ic=3.5A,Ib=1A - - 1.5 V Vce=5V,Ic=0.1A 35 - 100 Vce=5V,Ic=0.5A 35 - - Vce=3V,Ic=0.8A 25 - 50 - 0.17 2 µs - - 6 µs - - 0.5 µs hFE DC Current Gain tr Rise Time tSTG Storage Time tf Fall Time VCC=125V,IC=2A IB1=-IB2=-0.4A tP=300uS,VBE(OFF)=-5V Note: Pulsed duration=380µs,Duty cycle≤2% 2/6 Steady, keep you advance 6 SBP330 BP3306 Fig. 1 Static Characteristics Fig. 2 DC Current Gain Fig. 3 DC Current Gain -Emitter Saturation Voltage Fig. 5 Collector Collector-Emitter Fig. 4Power Derating 6Base -Emitter Saturation Voltage Fig. Fig.6Base 6Base-Emitter 3/6 Steady, keep you advance 6 SBP330 BP3306 7 Reverse Bias SOA Fig. Fig.7 8 Safe Operation Area Fig. Fig.8 4/6 Steady, keep you advance 6 SBP330 BP3306 9 Inductive Load Switching & RBSOA Test Circuit Fig. Fig.9 10 Inductive Load Switching &RBSOA Test Circuit Fig. Fig.10 5/6 Steady, keep you advance 6 SBP330 BP3306 To220 Package Dimension To-220 Unit:mm 6/6 Steady, keep you advance