MICROCIRCUIT DATA SHEET Original Creation Date: 04/29/03 Last Update Date: 05/13/03 Last Major Revision Date: MNLMH6628-X-RH REV 0A0 DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd(Si) TESTED TO MIL-STD-883, METHOD 1019 General Description The National LMH6628 is a high speed dual op amp that offers a traditional voltage feedback topology featuring unity-gain stability and slew-enhanced circuitry. The LMH6628's low noise and very low harmonic distortion combine to form a very wide dynamic range op amp that operates from a single (5 to 12V) or dual (+5V) power supply. Each of the LMH6628's closely matched channels provides a 300MHz unity gain bandwidth and low input voltage noise density (2nV/SqRtHz). Low 2nd/3rd harmonic distortion (-65/-74dBc at 10MHz) makes the LMH6628 a perfect wide dynamic-range amplifier for matched I/Q channels. With its fast and accurate settling (12ns to 0.1%), the LMH6628 is also an excellent choice for wide dynamic range, anti-aliasing filters to buffer the inputs of hi resolution analog-to-digital converters. Combining the LMH6628's two tightly matched amplifiers in a single package reduces cost and board space for many composite amplifier applications such as active filters, differential line drivers/receivers, fast peak detectors and instrumentation amplifiers. The LMH6628 is fabricated using National's VIP 10 (TM) comlimentary bipolar process. Industry Part Number NS Part Numbers LMH6628 LMH6628J-QML LMH6628J-QMLV LMH6628JFQML LMH6628JFQMLV LMH6628WG-QML LMH6628WG-QMLV LMH6628WGFQML LMH6628WGFQMLV Prime Die LMH6628A Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Features - Wide unity-gain bandwidth: 300 MHz Low noise: 2.0nV/SqRtHz Low distortion: -65/-74dBc (10MHz) Settling time: 12ns to 0.1% Wide supply voltage range: +2.5V to +6V High output current +85mA Improved replacement for CLC428 CONTROLLING DOCUMENTS: LMH6628J-QML 5962-0254501MPA LMH6628J-QMLV 5962-0254501VPA LMH6628JFQML 5962F0254501MPA LMH6628JFQMLV 5962F0254501VPA LMH6628WG-QML 5962-0254501MZA LMH6628WG-QMLV 5962-0254501VZA LMH6628WGFQML 5962F0254501MZA LMH6628WGFQMLV 5962F0254501VZA Applications - High speed dual op amp Low noise integrators Low noise active filters Driver/receiver for transmission systems High-speed detectors I/Q channel amplifiers 2 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 (Absolute Maximum Ratings) (Note 1) Supply Voltage +7V dc Maximum Junction temperature (Note 2) +175 C Lead temperature Soldering, 10 seconds Differential input voltage +300 C V+ - V- Common mode input voltage V+ - VStorage temperature range -65 C < Ta < +150 C Power Dissipation (Note 2) 1.0W Short circuit current (Note 3) Thermal Resistance ThetaJA Ceramic DIP Ceramic SOIC (Still Air) (500LF/Min Air Flow) (Still Air) (500LF/Min Air Flow) 135 75 200 145 ThetaJC Ceramic DIP Ceramic SOIC Package Weight (typical) Ceramic DIP Ceramic SOIC ESD Tolerance (Note 4) C/W C/W C/W C/W 30 C/W 19 C/W TBD TBD 4000V Note 1: Note 2: Note 3: Note 4: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperatuer). The maximum allowable power dissipation at any temperatuer is Pdmax = (Tjmax -TA) / ThetaJA or the number given in the Absoulute Maximum Ratings, whichever is lower. Output is short circuit protected to ground, however maximum reliability is obtained if output current does not exceed 160mA. Human body model, 1.5k Ohms in series with 100pF. 3 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Recommended Operating Conditions Supply Voltage +2.5V to +6.0V Ambient Operating Temperture Range -55 C < Ta < +125 C 4 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Electrical Characteristics DC PARAMETERS: Static and DC Tests (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C SYMBOL Ib Vio Icc PSRR Vout PARAMETER CONDITIONS NOTES Input Bias Current 3 Input Offset Voltage Supply Current Power Supply Rejection Ration Output Voltage Range 3 Rl = infinity PINNAME MIN Rl = Infinity UNIT SUBGROUPS -10 +10 uA 1 -20 +20 uA 2 -20 +20 uA 3 -2 +2 mV 1 -2.6 +2.6 mV 2, 3 24 mA 1 24 mA 2 25 mA 3 60 dB 1 55 dB 2, 3 V 1, 2, 3 MHz 4 3 +Vs = +4.0V to +5.0v, -Vs = -4.0V to -5.0V MAX -5.0 +5.0 AC PARAMETERS: Frequeuncy Domain Response (The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C SSBW Small Signal Bandwith -3 dB bandwidth, Vout < 0.5 Vpp 2 GFP Gain Flatness Peaking 0.1 MHz to 200 MHz, Vout <0.5 Vpp 2 0.6 dB 4 GFR Gain Flatness Rolloff 0.1 MHz to 20 MHz, Vout <0.5 Vpp 2 0.6 dB 4 Aol Open Loop Gain dB 4 2 50 55 AC PARAMETERS: Distortion and Noise Tests. (The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C HD2 Second Harmonic Distortion 1 Vpp at 10 MHz 2 50 dBc 4 HD3 Third Harmonic Distortion 1 Vpp at 10 MHz 2 60 dBc 4 5 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Electrical Characteristics DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: " Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as specified on the Internal Processing Instructions (IPI). SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Ib Input Bias Current 1 -1.0 +1.0 uA 1 Vio Input Offset Voltage 1 -0.2 +0.2 mV 1 Icc Supply Current 1 -1 +1 mA 1 Note 1: Note 2: Note 3: Rl = Infinity If not tested, shall be guaranteed to the limits specified in table 1. Group A testing only. Pre and post irradiation limits are identical to those listed under electrical characteristics. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019. 6 MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Graphics and Diagrams GRAPHICS# DESCRIPTION 06403HRA1 CERAMIC SOIC (WG), 10 LEAD (B/I CKT) 07082HRA4 CERDIP (J), 8 LEAD (B/I CKT) J08ARL CERDIP (J), 8 LEAD (P/P DWG) P000480A CERDIP (J), 8 LEAD (PIN OUT) P000484A CERAMIC SOIC (WG), 10 LEAD (PIN OUT) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 7 VOUT1 1 8 +VCC VINV1 2 7 VOUT2 VNON-INV1 3 6 VINV2 4 5 VNON-INV2 -VCC LMH6628J 8 - LEAD DIP CONNECTION DIAGRAM TOP VIEW P000480A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 VOUT1 1 10 VINV1 2 9 VOUT2 VNON-INV1 3 8 VINV2 -VCC 4 7 VNON-INV2 N/C 5 6 LMH6628WG 10 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000484A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 +VCC N/C MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 Revision History Rev ECN # 0A0 M0004149 05/13/03 Rel Date Originator Changes Rose Malone Initial MDS Release: MNLMH6628-X-RH, Rev. 0A0 8