UD0008 N-Ch 100V Fast Switching MOSFETs General Description Product Summery The UD0008 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD0008 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS 100V RDS(ON) ID 310mΩ 5.4A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application TO252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 100 V Gate-Source Voltage ±20 V 1 5.4 A 1 3.4 A 1 1.7 A 1 1.3 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 11 A 3 20.8 W 3 Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ PD@TA=25℃ Pulsed Drain Current 2 Total Power Dissipation Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 Typ. --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 6 ℃/W 1 UD0008 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.0672 --- V/℃ VGS=10V , ID=5A --- 260 310 VGS=4.5V , ID=3A --- 270 320 1.0 1.5 2.5 V --- -4.12 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 VGS=0V , ID=250uA VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 5.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω Qg Total Gate Charge (10V) --- 9.6 13.4 Qgs Gate-Source Charge --- 1.83 2.56 Qgd Gate-Drain Charge --- 1.85 2.6 2.8 Td(on) VDS=80V , VGS=10V , ID=5A Turn-On Delay Time uA nC --- 1.4 Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 30.6 55 Turn-Off Delay Time ID=5A --- 11.2 22 Fall Time --- 6 12 Ciss Input Capacitance --- 508 711 Coss Output Capacitance --- 29 41 Crss Reverse Transfer Capacitance --- 16.4 23 Min. Typ. Max. --- --- 5.4 A --- --- 11 A --- --- 1.2 V --- 20 --- nS --- 19 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit UD0008 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 8.0 VGS=10V VGS=7V ID Drain Current (A) 6.0 VGS=5V VGS=4.5V 4.0 VGS=3V 2.0 0.0 0 1 2 3 4 5 VDS ,Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) 1.5 1 TJ=150℃ TJ=25℃ 0.5 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) (V) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 T J , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD0008 N-Ch 100V Fast Switching MOSFETs 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON T 0.02 D = TON/T 0.01 TJpeak = TC+P DMXRθJC SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 10