UD3001 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UD3001 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD3001 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 42mΩ -20A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage -30 V Gate-Source Voltage ±20 V 1 -20 A 1 -13 A 1 -5.8 A 1 -4.6 A -40 A Single Pulse Avalanche Energy 59 mJ Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 3 IAS Avalanche Current -19 A PD@TC=25℃ Total Power Dissipation4 25 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 5 ℃/W UD3001 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-15A --- 35 42 VGS=-4.5V , ID=-10A --- 65 78 -1.2 -1.6 -2.5 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-15A --- 12 --- S Qg Total Gate Charge (-4.5V) --- 6.1 8.5 Qgs Gate-Source Charge --- 3.1 4.3 Qgd Gate-Drain Charge --- 1.8 2.5 --- 2.6 5.2 Td(on) VDS=-15V , VGS=-4.5V , ID=-15A Turn-On Delay Time uA nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 8.6 15.5 Turn-Off Delay Time ID=-15A --- 33.6 67.2 Fall Time --- 6 12.0 Ciss Input Capacitance --- 585 819 Coss Output Capacitance --- 100 140 Crss Reverse Transfer Capacitance --- 85 119 Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit --- --- -20 A --- --- -40 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 6.1 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 1.4 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD3001 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 144 42 ID=-12A 36 -ID Drain Current (A) VGS=-10V 30 117 RDSON (mΩ) VGS=-7V 24 90 18 VGS=-5V 12 63 VGS=-4.5V VGS=-3V 6 0 36 0 1 2 3 4 5 -VDS , Drain-to-Source Voltage (V) 6 2 4 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics -IS -Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD3001 P-Ch 30V Fast Switching MOSFETs 100.00 100us 10.00 -ID (A) 1ms 10ms 100ms DC 1.00 0.10 o Tc=25 C Single Pulse 0.01 0.1 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM SINGLE PULSE TON D = TON/T T TJpeak = TC + PDM x RθJC 0.01 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform 4