UD3010 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The UD3010 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD3010 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 30V 45mΩ 15A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features TO252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 15 A 1 9.5 A 1 5.4 A 1 4.3 A ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 30 A 3 15.6 W 3 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case 1 1 1 Max. Unit --- 62 ℃/W --- 8 ℃/W UD3010 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.016 --- V/℃ VGS=10V , ID=10A --- 38 45 VGS=4.5V , ID=5A --- 56 70 1.0 1.5 2.5 V --- -3.04 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 6.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 4.6 Ω Qg Total Gate Charge (4.5V) --- 2.65 3.71 Qgs Gate-Source Charge --- 1.08 1.51 Qgd Gate-Drain Charge --- 1.06 1.48 Td(on) VDS=15V , VGS=4.5V , ID=10A Turn-On Delay Time uA nC --- 1.0 2.0 Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 13.8 24.8 Turn-Off Delay Time ID=10A --- 7.2 14.4 Fall Time --- 3.6 7.2 Ciss Input Capacitance --- 220 308.0 Coss Output Capacitance --- 38 53.2 Crss Reverse Transfer Capacitance --- 32 44.8 Min. Typ. Max. Unit --- --- 15 A --- --- 30 A --- --- 1 V --- 4.2 --- nS --- 0.83 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD3010 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 80.0 ID=10A RDSON (mΩ) 70.0 60.0 50.0 40.0 2 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1 1.5 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD3010 N-Ch 30V Fast Switching MOSFETs 100.00 1000 F=1.0MHz 10us 100us Capacitance (pF) 10.00 ID (A) Ciss 100 Coss 1.00 10ms 100ms DC 0.10 Crss TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 10