Unitpoower US3405 P-Channel Enhancement Mode Field Effect Transistor General Description Features provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product US3405 is Pb-free (meets ROHS & Sony 259 specifications). US3405 is aa Green Green Product Product ordering ordering option. option. US3405 and is O3405L are electrically identical. VDS (V) = -30V ID = -2.6 A (V GS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 180m (VGS = -4.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C ID IDM B ±12 V Junction and Storage Temperature Range -30 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t 10s Steady-State Steady-State A -2.2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -2.6 TA=25°C Power Dissipation A Maximum -30 R JA R JL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W Unitpoower US3405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250 A, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250 A -1.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -10 TJ=55°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=-4.5V, ID=-2A VDS=-5V, ID=-2.5A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge ±100 nA -1.8 -2.3 V 102 130 137 180 A TJ=125°C RDS(ON) VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.5A A -5 VGS=-10V, ID=-2.6A Output Capacitance Units -1 Zero Gate Voltage Drain Current Coss Max V VDS=-24V, VGS=0V IDSS IS Typ 7 m m S 11 -0.83 m -1 V -2.2 A 481 pF 54 pF 34 pF 12 1.25 nC 1.75 nC Qgd Gate Drain Charge 4.35 nC tD(on) Turn-On DelayTime 8.9 ns tr Turn-On Rise Time 8.8 ns tD(off) Turn-Off DelayTime 23 ns tf Turn-Off Fall Time 6.9 ns 26 ns nC VGS=-10V, VDS=-15V, RL=6 , RGEN=6 trr IF=-2.5A, dI/dt=100A/ s Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/ s 15.6 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. Unitpower DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. Unitpower RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Unitpoower US3405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 VDS=-5V -10V 8 15 6 -ID(A) -ID (A) -4.5V 10 -4V 125°C -3.5V 5 4 2 25°C VGS=-3V 0 0 0 1 2 3 4 5 0 0.5 1 200 Normalized On-Resistance 160 RDS(ON) (m ) 2 2.5 3 3.5 4 4.5 5 1.6 180 140 VGS=-4.5V 120 100 VGS=-10V 80 60 40 VGS=-10V 1.4 VGS=-4.5V 1.2 ID=-2A 1 0.8 0 1 2 3 4 5 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 350 1.0E+00 -IS (A) 125°C 150 1.0E-05 0 1.0E-06 6 8 125 150 175 1.0E-03 50 4 100 1.0E-02 25°C 1.0E-04 25°C 2 75 1.0E-01 250 100 50 125°C ID=-2A 200 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 400 300 RDS(ON) (m ) 1.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 Unitpoower US3405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-15V ID=-2.5A Capacitance (pF) -VGS (Volts) 4 3 2 1 0 600 Ciss 400 200 Coss 0 0 1 2 3 4 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 TJ(Max)=150°C TA=25°C 10 s RDS(ON) 10.0 limited 30 100 s Power (W) 100.0 -ID (Amps) Crss 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 JA.R JA 1 10 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.Z R JA=90°C/W 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 Z Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000