YEASHIN BZT52C3V9

DATA SHEET
BZT52C2V4-BZT52C51
SEMICONDUCTOR
SOD-123 Plastic-Encapsulate Diode
ZENER DIODE
SOD123
Unit:inch(mm)
FEATURES
•Planar Die Construction
•500mW Power Dissipation on Ceramic PCB
•General Purpose Medium Current
•Ideally Suited for Automated Assembly
Processes
•High temperature soldering : 260OC / 10 seconds at terminals
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Maximum Ratings (Tamb=25℃ unless otherwise specified)
Characteristic
Forward Voltage
Value
VF
0.9
V
Pd
500
mW
RθJA
305
℃/W
Tj, TSTG
-55 to +150
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
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Dimensions In Inches
Min
Max
0.041
0.049
0.000
0.004
0.041
0.045
0.018
0.026
0.003
0.006
0.059
0.067
0.102
0.110
0.140
0.152
0.020 REF
0.010
0.018
0°
8°
Symbol
@ IF = 10mA
Operating and Storage Temperature Range
Dimensions In Millimeters
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.450
0.650
0.080
0.150
1.500
1.700
2.600
2.800
3.550
3.850
0.500 REF
0.250
0.450
0°
8°
1
Unit
℃
REV.02 20120403
BZT52C2V4-BZT52C51
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Zener Voltage Range
(Note 2)
Type
Number
Marking
Code
(Note 3)
Nom (V)
Min (V)
Max (V)
mA
BZT52C2V4
WX
2.4
2.2
2.6
5
100
600
BZT52C2V7
W1
2.7
2.5
2.9
5
100
BZT52C3V0
W2
3.0
2.8
3.2
5
BZT52C3V3
W3
3.3
3.1
3.5
5
BZT52C3V6
W4
3.6
3.4
3.8
BZT52C3V9
W5
3.9
3.7
BZT52C4V3
W6
4.3
BZT52C4V7
W7
4.7
BZT52C5V1
W8
BZT52C5V6
BZT52C6V2
BZT52C6V8
Vz @IZT
Maximum
Reverse
Current
Maximum Zener
Impedance (Note 4)
IZT
ZZT
@ IZT
ZZK @ IZK
Test
Current
IZTC
IZK
IR
mA
uA
V
Min
Max
1.0
50
1.0
-3.5
0
5
600
1.0
20
1.0
-3.5
0
5
95
600
1.0
10
1.0
-3.5
0
5
95
600
1.0
5.0
1.0
-3.5
0
5
5
90
600
1.0
5.0
1.0
-3.5
0
5
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
5
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
5
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
W9
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
WA
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
5
WB
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
W
@ VR
Typical
Temperature
Coefficient
@ IZTC
mV/°C
mA
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43
WU
43
40.0
46.0
2
100
700
1.0
0.1
32
10.0
12.0
5
BZT52C47
WV
47
44.0
50.0
2
100
750
1.0
0.1
35
10.0
12.0
5
BZT52C51
WW
51
48.0
54.0
2
100
750
1.0
0.1
38
10.0
12.0
5
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Tested with pulses, period = 5ms, pulse width = 300ms.
3. When provided, otherwise, parts are provided with date code only, and type number identifications appears on reel only.
4. f = 1KHz.
5. Thermal resistance from junction to ambient and form junction to lead
P.C.B mounted on 0.2x0.2" (5.0x5.0mm) copper pad areas R £K JL= R £K JC=100¢J / W
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2
REV.02 20120403
BZT52C2V4-BZT52C51
Typical Characteristics
0.6
50
IZ, ZENER CURRENT (mA)
PD, POWER DISSIPATION (W)
C2V7
C3V9
C3V3
0.5
0.4
0.3
0.2
0.1
0
Tj = 25°C
40
C5V6
C4V7
C6V8
C6V2
C8V2
30
20
10
Test Current IZ
5.0mA
0
0
25
75
50
100
125
150
0
1
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
30
Tj = 25°C
10
C10
2
10
C39
Tj = 25°C
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
C12
C15
20
C18
C22
10
0
Test current IZ
2mA
C27
Test current IZ
5mA
0
C33
C36
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
8
6
4
Test Current IZ
2mA
2
0
40
10
20
30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
Tj = 25 °C
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
VR = 1V
VR = 2V
100
VR = 1V
3
VR = 2V
10
10
1
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
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3
REV.02 20120403