MICROCIRCUIT DATA SHEET Original Creation Date: 07/28/03 Last Update Date: 08/20/03 Last Major Revision Date: 08/19/03 MNLMH6624-X REV 1A0 ULTRA LOW NOISE WIDEBAND OP AMP General Description The LMH6624 combines a wide bandwidth (1.5GHz GBW) with very low input noise (092nV/SqRtHz, 2.3pA/SqRtHz) and ultra low dc errors (100uV Vos, +0.1uV/ C drift) to provide a very precise operational amplifier with wide dynamic-range. This enables the user to achieve closed-loop gains of greater than 10. The LMH6624's traditional voltage feedback topology provides the following benefits: balanced inputs, low offsets voltage and offset current, very low offset drift, 81dB open-loop gain, 95dB common mode rejection ratio, and 88dB power supply rejection ratio. The LMH6624 operates from +2.5V to +6V in dual supply mode and from +5V to +12V in single supply configuration. The LMH6624 is stable for closed-loop gain of Av < -10 or +10 <AV. LMH6624 is offered in SQT23-5 and SIOC-8 packages. Industry Part Number NS Part Numbers LMH6624 LMH6624J-QML LMH6624J-QMLV LMH6624WG-QML LMH6624WG-QMLV Prime Die LMH6624A Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Features - 1.5GHz gain-bandwidth product 0,92nV/SqRtHz input voltage noise 800uV input offset voltage 350V/us slew rate 400V/us slew rate (Av = 10) -65dBc HD2 @ f = 10MHZ, Rl = 100 Ohms -80dBc HD3 @ f = 10MHZ, Rl = 100 Ohms +2.5V to +6V Supply voltage range (dual supply) +5V to +12V Supply voltage range (single supply) Improved replacement for the CLC425 CONTROLLING DOCUMENT: LMH6624J-QML 5962-0254401QPA LMH6624J-QMLV 5962-0254401VPA LMH6624WG-QML 5962-0254401QZA LMH6624WG-QMLV 5962-0254401VZA Applications - Instrumentation sense amplifiers Ultrasound pre-amps Magnetic tape & disk pre-amps Wide band active filters Professional audio systems Opto-electronics Medical diagnostic systems 2 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 (Absolute Maximum Ratings) (Note 1) Supply Voltage (Vs) +6 Vdc Common Mode Input Voltage (Vcm) V+ - VDifferential Input Voltage (Vin) +1.2V Maximum Power Dissipation (Pd) (Note 2) 1.0W Lead Temperature (Soldering, 10 seconds) Junction Temperature (Tj) +300 C +175 C Storage Temperature Range -65 C < Ta < +150 C Thermal Resistance ThetaJa Junction-to-ambient CERAMIC DIP (Still Air Flow) (500LF/Min Air Flow) CERAMIC SOIC (Still Air Flow) (500LF/Min Air Flow) 130 C/W 70 C/W 180 C/W 115 C/W ThetaJC CERAMIC DIP CERAMIC SOIC Package Weight (Typical) CERAMIC DIP CERAMIC SOIC ESD Tolerance (Note 3) ESD Rating Note 1: Note 2: Note 3: 17 C/W 20 C/W 1090mg 220mg 2000 V Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated within the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. Human body model, 100 pF discharged through 1.5K Ohms. 3 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Recommended Operating Conditions Supply Voltage (Vs) +5Vdc Ambient Operating Temperature Range (TA) -55 C < Ta < +125 C 4 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Electrical Characteristics DC PARAMETERS: Static and DC Tests (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain setting resistance (Rg) = 26.1 Ohms. -55 C < Ta < +125 C (Note 3). SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Iin Input Bias Current -20 +20 uA 1, 2, 3 Vio Input Offset Voltage -0.8 +0.8 mV 1 -1 +1 mV 2, 3 16 mA 1, 2 18 mA 3 75 dB 1, 2, 3 77 dB 4 72 dB 5, 6 Is Supply Current PSRR Power Supply Rejection Ratio AOL Open Loop Gain Rl = infinite +Vs = +4.0V to +5.0V, -Vs = -4.0V to -5.0V AC PARAMETERS: Frequency Domain Tests (The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain setting resistance (Rg) = 26.1 Ohms. -55 C < Ta < +125 C (Note 3). SSBW Small Signal Bandwidth -3 dB bandwidth, Vout < 0.4 Vpp 2 GFP Gain Flatness Peaking Low 0.1 MHz to 30 MHz, Vout < 0.4 Vpp 2 GFR Gain Flatness Rolloff 0.1 MHz to 30 MHz, Vout < 0.4 Vpp 2 75 MHz 9 0.7 dB 9 1.0 dB 9 AC PARAMETERS: Distortion and Noise Tests (The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain setting resistance (Rg) = 26.1 Ohms. -55 C < Ta < +125 C (Note 3). HD2 2nd Harmonic Distortion 1 Vpp at 10 MHz 2 -48 dBc 9 HD3 3rd Harmonic Distortion 1 Vpp at 10 MHz 2 -65 dBc 9 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: "Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as specified on the Internal Processing Instructions (IPI), (Note 3). Iin Input Bias Current 1 -0.2 +0.2 uA 1 Vio Input Offset Voltage 1 -0.1 0.1 mV 1 Is Supply Current 1 -1 +1 mA 1 5 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Note 1: Note 2: Note 3: If not tested, shall be guaranteed to the limits specified in table I herein. Group A testing only. The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table. Negative current shall be defined as convential current flow out of a device terminal. 6 MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Graphics and Diagrams GRAPHICS# DESCRIPTION 06402HRA2 CERAMIC SOIC (WG), 10 LEAD (B/I CKT) 07089HRA2 CERDIP (J), 8 LEAD (B/I CKT) J08ARL CERDIP (J), 8 LEAD (P/P DWG) P000479A CERDIP (J), 8 LEAD (PIN OUT) P000483A CERAMIC SOIC (WG), 10 LEAD (PIN OUT) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 7 N/C 1 8 N/C VINV 2 7 +VCC 3 6 VOUT 4 5 N/C VNON-INV -VCC LMH6624J 8 - LEAD DIP CONNECTION DIAGRAM TOP VIEW P000479A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N/C 1 10 VINV 2 9 +VCC VNON-INV 3 8 VOUT -VCC 4 7 N/C N/C 5 6 N/C LMH6624WG 10 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000483A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N/C MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 Revision History Rev ECN # Originator Changes 0A0 M0004195 08/20/03 Rel Date Rose Malone Initial MDS Release: MNLMH6624-X, Rev. 0A0 1A0 M0004262 08/20/03 Rose Malone Update MDS: MNLMH6624-X, Rev. 0A0 to MNLMH6624-X, Rev. 1A0. Changed Subgroups in AC Electrical Section from 4 to 9 for parameters SSBW, GFP, GFR, HD2, HD3. 8