DATA SHEET SF31G~SF38 G SEMICONDUCTOR SUPE RFAST RECOVERY RECTIFIERS VOLTAG E - 50 to 8 00 Volts CURRENT - 3.0 Amperes FEATURES DO-201AD Unit:inch(mm) • Superfast recovery times-epitaxial construction • Low forward voltage, high current capability • Exceeds environmental standards of MIL-S-19500/228 • Hermetically sealed .210 (5.3) .188 (4.8) DIA. • Low leakage • High surge capability 1.0 (25.4) MIN. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing .375 (9.5) .285 (7.2) Flame Retardant Epoxy Molding Compound • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS 1.0 (25.4) MIN. environment substance directive request .052 (1.3) .048 (1.2) DIA. MECHANICAL DATA • Case: Molded plastic, DO-201AD • Terminals: Axial leads, solderable to MIL-STD-202, Method 208 • Polarity: Color Band denotes cathode end • Mounting Position: Any • Weight: 0.04 ounce, 1.12 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. SYMBOLS SF31G SF32G SF33G SF34G SF35G SF36G SF37G SF38G UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 800 V Maximum RMS Voltage VRMS 35 70 105 140 210 320 420 640 V VDC 50 100 150 200 300 400 600 800 V Maximum DC Blocking Voltage Maximum Average Forward Current .375"(9.5mm) lead length I(AV) 3.0 A IFSM 125.0 A at TA=55 °C Peak Forward Surge Current, IFM (surge): 8.3ms single half sine-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 3.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage VF 0.95 Maximum Reverse Recovery Time(Note 1) Typical Junction capacitance (Note 2) Typical Junction Resistance(Note 3) Operating and Storage Temperature Range TJ V 1.7 IR 5.0 uA IR 300 uA TRR 35.0 nS CJ 35 pF RθJA TJ,TSTG 20.0 °C /W -55 to +150 °C Maximum DC Reverse Current at Rated DC Blocking Voltage TA=125 °C 1.25 NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted http://www.yeashin.com 1 REV.02 20110725 RATINGS AND CHARACTERISTIC CURVES SF31G~SF388G FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10Ω NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 1Ω NONINDUCTIVE | | | | | | | | +0.5A 0 -0.25A AVERAGE FORWARD CURRENT,(A) 50Ω NONINDUCTIVE (+) OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max., Source Impedance= 50 ohms. SET TIME BASE FOR 3.0 2.5 2.0 Single Phase 1.5 Half Wave 60Hz Resistive Or Inductive Load 1.0 0.375"(9.5mm) Lead Length 0.5 0 0 25 50 FIG.4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 50 10 10 G 38 SF 37 SF G- 35 SF G~ 1.0 SF 31G 36 G ~S F34 G REVERSE LEAKAGE CURRENT, (µA) 50 SF INSTANTANEOUS FORWARD CURRENT,(A) FIG.3-TYPICAL FORWARD 3.0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 .4 .6 .8 1.0 1.2 1.4 1.6 125 150 175 1.0 Tj=100 C Tj=25 C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FORWARD VOLTAGE,(V) FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 125 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) 100 3.0 .01 1.8 75 AMBIENT TEMPERATURE,( C) 50 / 10ns / cm 100 75 Tj=25 C 8.3ms Single Half Sine Wave 50 JEDEC method 25 150 125 100 75 50 25 0 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz http://www.yeashin.com .01 .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 2 REV.02 20110725 50 100